XP1005-BD-V2

XP1005-BD-V2 MA-COM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

 Excellent Saturated Output Stage  Balanced Design Provides Good Output Match  26.0 dB Small Signal Gain  +24.0 dBm Saturated Output Power  100% On-Wafer RF, DC and Output Power Testing  100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s four stage 35.0 -43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point -to-Point Radio, LMDS, SATCOM and VSAT applications.

Ordering Information

XP1005-BD-000V “V” - vacuum release gel paks XP1005-BD-EV1 evaluation module Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 1050 mA Gate Bias Voltage (Vg) +0.3 V Input Power (Pin) +8.0 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to MTTF Table1 Channel Temperature (Tch) MTTF Table1 1. Channel temperature directly affects a device's MTTF. Chan- nel temperature should be kept as low as possible to maximize lifetime. Chip Device Layout

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 Electrical Specifications: 35-43 GHz (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Input Return Loss (S11) @ 37.0-40.0 dB - 10.0 - Output Return Loss (S22) @ 37.0-40.0 dB - 15.0 - Small Signal Gain (S21) @ 37.0-40.0 dB 23.0 26.0 - Gain Flatness (S21) dB - +/-2.0 - Reverse Isolation (S12) @ 37.0-40.0 dB - 40.0 - Saturated Output Power (Psat) @ 37.0-40.0 dBm +23.0 +24.0 - Drain Bias Voltage (Vd1,2,3,4) VDC - +4.5 +5.5 Gate Bias Voltage (Vg1,2,3,4) VDC -1.0 -0.7 0.0 Supply Current (Id) (Vd=4.5 V, Vg=-0.7 V Typical) mA - 500 1000

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 Typical Performance Curves 37.0 38.0 39.0 40.0 Max Median Mean -3-sigma -80 -70 -60 -50 -40 -30 -20 -10 Max Median Mean -3-sigma -20 -18 -16 -14 -12 -10 Max Median Mean -3-sigma -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 Max Median Mean -3-sigma 37 37.5 38 38.5 39 39.5 40 Max Median Mean -3-sigma 37 37.5 38 38.5 39 39.5 40 Max Median Mean -3-sigma

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 Typical Performance Curves (cont.) 35 36 37 38 39 40 41 42 43 Frequency (GHz) S21_XP1005 35 36 37 38 39 40 41 42 43 Frequency (GHz) S12_XP1005 -90 -80 -70 -60 -50 -40 -30 -20 35 36 37 38 39 40 41 42 43 Frequency (GHz) S11_XP1005 -20 -18 -16 -14 -12 -10 35 36 37 38 39 40 41 42 43 Frequency (GHz) S22_XP1005 -30 -25 -20 -15 -10 35 36 37 38 39 40 41 42 43 44 45 Frequency (GHz) S21_XP1005 Output Power, Vds = 4.5 V, Ids = 500 mA, Pin = 0 dBm 25.5 24.5 23.5 22.537 37.5 38 38.5 39 39.5 40 Frequency (GHz) Output Power (dBm)

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note:Engineering designator is38H4PBA0157) Units:millimeters(inches) Bond pad dimensionsare shown to center of bond pad. Thickness:0.110 +/- 0.010 (0.0043 +/- 0.0004),Backside isground,Bond Pad/Backside Metallization:Gold Bond pad centersare approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RFIn) Bond Pad #2 (Vg2) Bond Pad #3 (Vd2) Bond Pad #4 (Vg3A) Bond Pad #5 (Vd3A) Bond Pad #6 (Vg4A) Bond Pad #7 (Vd4A) Bond Pad #8 (RFOut) Bond Pad #9 (Vd4B) Bond Pad #10 (Vg4B) Bond Pad #11Vd3B) Bond Pad #12 (Vg3B) Bond Pad #13 (Vd1) Bond Pad #14 (Vg1) 1.825 (0.072) 2 3 4 5 6 7 910111213 1.163 (0.046) 1.562 (0.062) 1.960 (0.077) 2.362 (0.093) 3.162 (0.125) 2.764 (0.109) 2.362 (0.093) 1.960 (0.077) 1.562 (0.062) 1.163 (0.046)0.0 0.0 0.831 (0.033) 2.764 (0.109) 3.162 (0.125) 0.478 (0.019) 3.526 (0.139) 2 3 4 5 6 7 91011121314 Vd2,3Vg2,3 RF In Vg1 RF Out Vd1 Vg4 Vd4 Vg2,3 Vd2,3 RF Out Vd4Vg4 RF In Vg1 Vd1 XP1005-BD

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 MTTF Tables These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabrica ting foundry. Backplate Temperature Channel Temperature Rth MTTF Hours FITs 55 deg Celsius 133.8 deg Celsius 35.0° C/W 3.35E+08 2.99E+00 75 deg Celsius 159.1 deg Celsius 37.4° C/W 2.45E+07 4.08E+01 95 deg Celsius 184.0 deg Celsius 39.5° C/W 2.50E+06 4.01E+02 Bias Conditions: Vd1=Vd2=Vd3a(or Vd3b)=Vd4a(or Vd4b)=4.5V, Id1=35 mA, Id2=65 mA, Id3a/b=130 mA, Id4a/b=270 mA

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd4 at Vd (1,2,3,4)=4.5V with Id1=35mA, Id2=65mA, Id3=130mA and Id4=270mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control volt- age. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=500 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply volt- age available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. The Vg3a/b, Vd3a/b, Vg4a/b and Vd4a/b pads have been tied together on chip and can be biased from either side. The unused Vg3a/b, Vd3a/b, Vg4a/b and Vd4a/b pads must be bypassed but can be left open. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. The Vg3a/b, Vd3a/b, Vg4a/b and Vd4a/b pads have been tied together on chip and can be biased from either side. The unused Vg3a/b, Vd3a/b, Vg4a/b and Vd4a/b pads must be bypassed but can be left open. App Note [3] Output Power Adjust Using Gate Control - The XP1005 device has an interesting and very use- ful additional feature. The XP1005's output power can be adjusted by lowering the individual or combined gate voltages towards pinch off without sacrificing much in the way of Input 3rd Order Intercept Point. Improvements to the IIP3 and Noise Figure data shown here while attenuating the gain are also possible with individual gate control. Data here has been taken using combined gate control (all gates changed together) to lower the de- vice's output power. The results are shown in the table below. Additionally, the accompanying curve shows the level and linearity of the typical attenuation achievable as the gate is adjusted at various levels until pinch -off. Id split: Vd1=35 mA, Vd2=65 mA, Vd3A=65.0 mA, Vd3B=65.0 mA, Vd4A=135 mA, Vd4B=135 mA Gain (dB) IM3 (dBc) IIP3 (dBm) NF (dB) 26.0 4.5 7.10 24.0 7.5 6.80 22.0 10.0 6.70 20.0 12.0 6.60 18.0 11.5 7.00 16.0 10.5 7.10 14.0 10.0 7.50 12.0 9.5 7.90 10.0 9.5 8.80 8.0 9.5 9.40 47.0 53.0 58.0 62.0 61.0 59.0 58.0 57.0 57.0 57.0 -30 -25 -20 -15 -10 37 38 39 40 R2C2 Ids = 500 mA R2C2 Ids = 50% R2C2 Ids = 25% R2C2 Ids = 12.5% R2C2 Ids = 6.25% R2C2 Ids = 3.125% R2C2 Vgs = -2.5 V R3C3 Ids = 500 mA R3C3 Ids = 50% R3C3 Ids = 25% R3C3 Ids = 12.5% R3C3 Ids = 6.25% R3C3 Ids = 3.125% R3C3 Vgs = -2.5 V

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 Device Schematic Typical Application R=14.3 R=57.0 R=5.5 R=18.3 R=14.3 R=57.0 R=5.5 RF In R=9.1 R=5.6R=5.6 R=5.6 R=14.3 R=7.1 R=4.6 R=50.0 R=7.1 R=4.6 R=2.3 R=50.0 R=5.6 RF Out R=2.3 Vd4A Vg4A Vd3A Vg3A Vd4B Vg4B Vd3B Vg3B R=14.3 Vd1 Vg1 Vg2 Vd2

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 35.0-43.0 GHz XP1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V2 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices.