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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031J DOC Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level └ Package -4 = LCC4 /39 = TO-39 /5 = TO-5 G = Cerpack S.22 = SMD.22 └ Family / Voltage 13 = 800V 14 = 900V SFT5013 and SFT5014 Series
0.5 AMP, 800 – 900 Volts
FEATURES: BVCER to 900 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200° C Operating, Gold Eutectic Die Attach 2N5010 thru 2N5012 Also Available, Contact Factory Designed for Complementary Use with SFT5094 and SFT5096 TX, TXV, and S-Level Screening Available Maximum Ratings Symbol Value Units Collector – Emitter Voltage (RBE= 1 kΩ) 5013
5014 VCER 800
Collector – Base Voltage 5013
5014 VCBO 800
Emitter – Base Voltage V EBO 5 V Collector – Emitter Breakdown Voltage 5013
5014 BVCEO 300
Peak Collector Current I C 0.5 A Peak Base Current I B 250 mA Total Device Dissipation @ TC= 25º C @ TA= 25º C Derate above TC= 25º C @ TC= 100º C Derate above TC= 100º C @ TC= 25º C @ TC= 25º C /39 & /5 G S.22 PD 1.0 2.0 2.0 17.5 14.5 W W mW/ºC W mW/ºC W W Operating and Storage Temperature T OP & TSTG -65 to +200 ºC Thermal Resistance, Junction to Case /39 & /5 G S.22 RθJC / RθJA RθJC RθJC RθJC 50 (typ 30) 10 (typ 5) 12 (typ 9) ºC/W 4 PIN CLCC (-4) TO-39 (/39) TO-5 (/5) Cerpack (G) SMD.22 (S.22) Notes: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. 4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031J DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5013 and SFT5014 Series Case Outline: 4 PIN CLCC (LCC4) PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: BASE PIN 4: N/C Case Outline: TO-39 (/39) PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Electrical Characteristic 3/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage (IC = 200 µADC, RBE = 1 KΩ) 5013
5014 BVCER 800
900 –– –– V Collector–Base Breakdown Voltage (IC = 200 µADC) 5013
5014 BVCBO 800
900 –– –– V Emitter–Base Breakdown Voltage (IE = 50 µADC) BV EBO 5 11.5 –– V Collector Cutoff Current (VCB = 650 V) (VCB = 700 V) (VCB = 650 V, TC = 100°C) (VCB = 700 V, TC = 100°C) 5013 5014 5013 5014 I CBO 100 100 µAdc Emitter Cutoff Current (VEB= 4V) I EBO — 0.001 20 µA DC Current Gain 4/ (IC = 5 mADC, VCE = 10 VDC) (IC = 20 mADC, VCE = 10 VDC) hFE 180 –– Collector – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VCE(Sat) –– 0.07 1.6 Vdc Base – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VBE(Sat) –– 0.73 1.0 Vdc Current Gain Bandwidth Product (IC = 20 mADC, VCE = 10 VDC, f = 20 MHz) fT 20 30 –– MHz Output Capacitance (VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz) Cob –– 6.6 30 pF Delay Time Rise Time Storage Time Fall Time VCC= 125 VDC, IC= 100 mADC, IB1= 20 mADC, IB2= 20 mADC td tr ts tf 200 2200 400 200 1200 3000 800 nsec
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031J DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5013 and SFT5014 Series Case Outline: TO-5 (/5) PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Case Outline: Cerpack (G) PIN 1: EMITTER PIN 2: BASE BOTTOM TAB: COLLECTOR Bottom View Case Outline: SMD.22 (S.22) PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: BASE