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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0029E DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT4300A __ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level └ Package = TO-5 TO-5 SFT4300

2 AMP, 150 Volts

FEATURES:  Radiation Tolerant  Fast Switching  High Frequency  Low Saturation Voltage  200°C Operating, Gold Eutectic Die Attach  Complementary use with SFT5333 NOTES: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. Maximum Ratings Symbol Value Units Collector – Emitter Voltage V CEO 80 V Collector – Base Voltage VCBO 150 V Emitter – Base Voltage V EBO 8 V Collector Current I C 2 A Base Current I B 1 A Total Device Dissipation @ TC = 100º C Derate above TC = 100º C PD 6.6 W mW/ºC Operating and Storage Temperature Tj, Tstg -65 to +200 ºC Thermal Resistance, Junction to Case RθJC 15.2 ºC/W All dimensions are in inches Tolerances: (unless otherwise specified) Pin 1: Emitter Pin 2: Base Pin 3/Case: Collector

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0029E DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT4300 Electrical Characteristic Symbol Min Max Units Collector – Emitter Breakdown Voltage (IC= 30mAdc) BVCEO 80 –– V Collector–Base Breakdown Voltage (IC= 200µAdc) BVCBO 150 –– V Emitter–Base Breakdown Voltage (IE= 200µAdc) BVEBO 6 –– V Collector Cutoff Current (VCB= 90V, TC= 25°C) (VCB= 90V, TC= 100°C) ICBO –– 1 75 µAdc Collector Cutoff Current (VCE= 40 Vdc) ICEO –– 5 µAdc Emitter Cutoff Current (VEB= 6V) IEBO –– 1 µAdc DC Current Gain* (IC= 1.0Adc, VCE= 5Vdc) (IC= 2.0Adc, VCE= 5Vdc) hFE 50 200 Collector – Emitter Saturation Voltage* (IC= 1.0Adc, IB= 100mAdc) (IC= 2.0Adc, IB= 200mAdc) VCE(Sat) –– 0.3

0.5 Vdc

Base – Emitter Voltage (IC= 2.0Adc, VCE= 2Vdc) VBE(ON) –– 1.2 Vdc Current Gain Bandwidth Product (IC= 0.5Adc, VCE= 5Vdc, f= 10MHz) fT 80 –– MHz Output Capacitance (VCB= 30Vdc, IE= 0 Adc, f= 1.0MHz) Cob –– 45 pF Input Capacitance (VBE= 8Vdc, IC= 0 Adc, f= 1.0MHz) Cib –– 225 pF Turn On Time VCC = 20Vdc, IC = 1.0Adc, VEB(off) = 3.7Vdc IB1 = IB2 = 100mAdc, RL – 20 Ohms t(on) t(off) --- --- 130 1.5 nsec µsec Turn Off Time For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. Notes: * Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2%