XL0840 STMICROELECTRONICS | Alldatasheet

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XL0840® January 2002 - Ed: 1A SENSITIVE GATE 0.8A SCRs Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) TI = 55°C 0.8 A IT(AV) Average on-state current (180° conduction angle) TI = 55°C 0.5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C t p=1 0m s 7 I2tI 2t Value for fusing tp = 10 ms Tj = 25°C 0.24 A 2s dI/dt Critical rate of rise of on-state current IG =2xI GT ,t r≤ 100ns F = 60 Hz Tj = 125°C 30 A/ µs IGM Peak gate current tp = 20µs Tj = 125°C 1 A PG(AV) Average gate power dissipation Tj = 125°C 0.1 W Tstg Tj Storage junction temperature range Operating junction temperature range -4 0t o+1 5 0 -4 0t o+1 2 5 ABSOLUTE RATINGS (limiting values) Symbol Value Unit IT(RMS) 0.8 A VDRM 400 V IGT 200 µA MAIN FEATURES TO-92 K G A G A K Thanks to its highly sensitive triggering levels, the XL0840 device is suitable for all high volumes appli- cations where the available gate current is limited, such as Christmas lights control.

DESCRIPTION

Symbol Parameter Value Unit Rth(j-a) Junction to ambient (DC) 150 °C/W Rth(j-l) Junction to lead (DC) 80 °C/W THERMAL RESISTANCES Symbol Test Conditions XL0840 Unit IGT VD =12V R L=140Ω MAX. 200 µA VGT MAX. 0.8 V VGD VD =VDRM R L=3.3kΩ R GK =1 kΩ Tj = 125°C MIN. 0.1 V VRG IRG = 10µA MIN. 8 V IH IT= 50mA R GK =1 kΩ MAX. 5 mA IL IG = 1mA R GK =1 kΩ MAX. 6 mA dV/dt V D =67% V DRM R GK =1 kΩ Tj = 125°C MIN. 75 V/ µs VTM ITM = 1.6A tp = 380µs Tj = 25°C MAX. 1.95 V VTO Threshold voltage Tj = 125°C MAX. 1.0 V Rd Dynamic resistance Tj = 125°C MAX. 600 m Ω IDRM VDRM R GK =1 kΩ Tj = 25°C MAX. 1 µA Tj = 125°C 100 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Part Number Voltage Sensitivity Package XL0840 400V 200 µA TO-92 PRODUCT SELECTOR X L 08 40 SENSITIVE SCR LIGHT CONTROL CURRENT:0.8A VOLTAGE: 40: 400V

ORDERING INFORMATION

Part Number Marking Weight Base quantity Packing mode XL0840 XL0840 0.2 g 2500 Bulk OTHER INFORMATION

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 Tamb(°C) α =180° D.C. IT(av)(A) Fig. 2-2:Average and D.C. on-state current ver- sus ambient temperature (device mounted on FR4 with recommended pad layout). 1.E-02 1.E-01 1.E+00 tp(s) K=[Zth(j-a)/Rth(j-a)] Fig. 3:Relative variation of thermal impedance junction to ambient versus pulse duration. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT(av)(A) α =180° P(W) 180° α α Fig. 1:Maximum average power dissipation ver- sus average on-state current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 Tlead(°C) α =180° D.C. IT(av)(A) Fig. 2-1:Average and D.C. on-state current ver- sus lead temperature. 0.01 0.10 1.00 10.00 Rgk(k )Ω Tj=25°C IH [Rgk] / IH [Rgk=1k ]Ω Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(°C) IGT IH & IL (Rgk=1kW) IGT, IH, IL[Tj] / IGT, IH, IL [Tj=25°C] Fig. 4:Relative variation of gate trigger current, holding current and latching current versus junc- tion temperature (typical values).

0.10 1.00 10.00 Rgk(k )Ω Tj=125°C VD=270V dV/dt [Rgk] / dV/dt [Rgk=1k ]Ω Fig. 6:Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). 1.00 10.00 Cgk(nF) Tj=125°C VD=270V Rgk=1kW dV/dt [Cgk] / dV/dt [Rgk=1k ]Ω Fig. 7:Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). 1 10 100 1000 Number of cycles Non repetitive Tj initial=25°C Repetitive Tlead=50°C tp=10ms ITSM(A) Fig. 8:Surge peak on-state current versus number of cycles. 0.1 1.0 10.0 100.0 0.01 0.10 1.00 10.00 tp(ms) Tj initial=25°C ITSM I²t ITSM(A), I t (A s) Fig. 9:Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- responding value of I 2t. 0.01 0.10 1.00 10.00 0123456 VTM(V) Tj=25°C Tj=125°C Tj max. : Vto = 1.00 V Rd = 600 mΩ ITM(A) Fig. 10:On-state characteristics (maximum val- ues).

a E B A C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com REF. DIMENSIONS Millimeters Inches A 1.35 0.053 B 4.70 0.185 C 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.50 0.019