XCEZ6V2

XCEZ TOSHIBA | Alldatasheet

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Zener Diode Silicon Epitaxial Planar XCEZ series Start of commercial production 2025-06 1. Applications (1) Automotive (2) Voltage surge protection 2. Features (1) AEC-Q101 qualified (2) Small package (3) The typical voltage of VZ is accorded to E24 series. 3. Packaging and Internal Circuit ESC 1: Cathode 2: Anode 4. Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, T a = 25 ) Characteristics Power dissipation Junction temperature Storage temperature Symbol PD Tj Tstg Note (Note 1) (Note 2) Rating 150 300 150 -55 to 150 Unit mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimensions of 16 mm2 Note 2: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

1. Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, T a = 25 ) Type No. XCEZ5V6 XCEZ6V2 XCEZ6V8 XCEZ7V5 XCEZ8V2 XCEZ9V1 XCEZ10V XCEZ11V XCEZ12V XCEZ13V XCEZ15V XCEZ16V XCEZ18V XCEZ20V XCEZ22V XCEZ24V XCEZ27V XCEZ30V XCEZ33V XCEZ36V Electrostatic discharge voltage IEC61000-4-2 (Contact, Air) VESD(kV) (Note 1) ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±20 ±20 ±17 ±12 Electrostatic discharge voltage ISO10605 (Cotact, Air) VESD(kV) (Note 2) ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±25 ±20 Peak pulse power PPK(W) (Note 3) 155 175 180 190 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 Peak pulse current IPP(A) (Note 3) 12.0 11.0 10.0 9.5 8.5 8.0 7.5 7.25 7.0 6.5 5.6 5.5 5.1 5.0 4.75 4.5 4.1 4.0 3.5 3.0 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: according to IEC61000-4-2(C = 150 pF / R = 330 Ω) Note2: according to ISO10605(C = 330 pF / R = 2 kΩ) Note3: according to IEC61000-4-5(tp = 8 / 20 µs) 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

1. Electrical Characteristics 1 (Unless otherwise specified, T a = 25 ) Type No. XCEZ5V6 XCEZ6V2 XCEZ6V8 XCEZ7V5 XCEZ8V2 XCEZ9V1 XCEZ10V XCEZ11V XCEZ12V XCEZ13V XCEZ15V XCEZ16V XCEZ18V XCEZ20V XCEZ22V XCEZ24V XCEZ27V XCEZ30V XCEZ33V XCEZ36V Min 5.3 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 34.0 Zener VZ Typ. 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 Voltage (V) Max 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.6 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 Test Current IZ (mA) Dinamic ZZ Max 100 100 100 Impedance (Ω) Test Current IZ (mA) Reverse IR(1) Max 1.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Current (µA) Test Voltage VR (V) 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 Reverse IR(2) Max 1.0 2.5 1.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Current (µA) Test Voltage VR (V) 3.5 5.0 5.5 6.0 7.0 7.5 8.0 9.0 10.0 11.0 12.0 14.0 16.0 17.6 18.0 19.0 23.0 27.0 30.0 32.5 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

1. Electrical Characteristics 2 (Unless otherwise specified, Ta = 25 ) Type No. XCEZ5V6 XCEZ6V2 XCEZ6V8 XCEZ7V5 XCEZ8V2 XCEZ9V1 XCEZ10V XCEZ11V XCEZ12V XCEZ13V XCEZ15V XCEZ16V XCEZ18V XCEZ20V XCEZ22V XCEZ24V XCEZ27V XCEZ30V XCEZ33V XCEZ36V Dynamic Resistance RDYN (Ω) (Note 1) Typ. 0.16 0.21 0.27 0.32 0.37 0.44 0.52 0.60 0.70 0.80 0.60 0.50 0.40 0.35 0.40 0.60 0.90 1.25 1.80 2.60 Clamp Voltage VC (V) (Note 1) (Note 2) Typ. 9.0 10.0 13.0 14.0 16.5 17.0 19.0 24.0 26.0 27.0 24.0 27.0 28.5 30.5 32.0 36.5 45.0 47.5 57.0 63.0 Total Capacitance Ct (pF) (Note 3) Typ. 125 105 Note1: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between ITLP1 = 16 A and ITLP2 = 30 A. Note2: ITLP = 16 A Note3: VR = 0 V, f = 1 MHz 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

1. Marking List Type No. XCEZ5V6 XCEZ6V2 XCEZ6V8 XCEZ7V5 XCEZ8V2 XCEZ9V1 XCEZ10V Marking NL NM NN NP NQ NR Type No. XCEZ11V XCEZ12V XCEZ13V XCEZ15V XCEZ16V XCEZ18V XCEZ20V Marking Type No. XCEZ22V XCEZ24V XCEZ27V XCEZ30V XCEZ33V XCEZ36V Marking PA PB PC PD PE PF 9. Marking Fig. 9.1 XCEZ5V6 10. Land Pattern Dimensions (for reference only) Fig. 10.1 Land Pattern Dimensions (for reference only) (Unit: mm) 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

1. Characteristics Curves 11.1. XCEZ series Characteristics Curves(Note) Fig. 11.1.1 IZ - V Z(1) Fig. 11.1.2 IZ - V Z(2) Fig. 11.1.3 γZ - V Z Fig. 11.1.4 αZ - V Z Fig. 11.1.5 Ct - V R (1) Fig. 11.1.6 Ct - V R (2) Fig. 11.1.7 Ct - V R (3) Fig. 11.1.8 Ct - V R (4) 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

Fig. 11.1.9 PRSM - t w Fig. 11.1.10 PD - T a Fig. 11.1.11 rth(j-a) - t w Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.2. XCEZ5V6 Characteristics Curves(Note) Fig. 11.2.1 ITLP - V TLP Fig. 11.2.2 VC - I PP Fig. 11.2.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.2.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.2.5 ISO10605 Clamp Waveform +8 kV Fig. 11.2.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.3. XCEZ6V2 Characteristics Curves(Note) Fig. 11.3.1 ITLP - V TLP Fig. 11.3.2 VC - I PP Fig. 11.3.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.3.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.3.5 ISO10605 Clamp Waveform +8 kV Fig. 11.3.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.4. XCEZ6V8 Characteristics Curves(Note) Fig. 11.4.1 ITLP - V TLP Fig. 11.4.2 VC - I PP Fig. 11.4.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.4.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.4.5 ISO10605 Clamp Waveform +8 kV Fig. 11.4.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.5. XCEZ7V5 Characteristics Curves(Note) Fig. 11.5.1 ITLP - V TLP Fig. 11.5.2 VC - I PP Fig. 11.5.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.5.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.5.5 ISO10605 Clamp Waveform +8 kV Fig. 11.5.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.6. XCEZ8V2 Characteristics Curves(Note) Fig. 11.6.1 ITLP - V TLP Fig. 11.6.2 VC - I PP Fig. 11.6.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.6.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.6.5 ISO10605 Clamp Waveform +8 kV Fig. 11.6.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.7. XCEZ9V1 Characteristics Curves(Note) Fig. 11.7.1 ITLP - V TLP Fig. 11.7.2 VC - I PP Fig. 11.7.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.7.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.7.5 ISO10605 Clamp Waveform +8 kV Fig. 11.7.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.8. XCEZ10V Characteristics Curves(Note) Fig. 11.8.1 ITLP - V TLP Fig. 11.8.2 VC - I PP Fig. 11.8.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.8.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.8.5 ISO10605 Clamp Waveform +8 kV Fig. 11.8.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.9. XCEZ11V Characteristics Curves(Note) Fig. 11.9.1 ITLP - V TLP Fig. 11.9.2 VC - I PP Fig. 11.9.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.9.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.9.5 ISO10605 Clamp Waveform +8 kV Fig. 11.9.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.10. XCEZ12V Characteristics Curves(Note) Fig. 11.10.1 ITLP - V TLP Fig. 11.10.2 VC - I PP Fig. 11.10.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.10.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.10.5 ISO10605 Clamp Waveform +8 kV Fig. 11.10.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.11. XCEZ13V Characteristics Curves(Note) Fig. 11.11.1 ITLP - V TLP Fig. 11.11.2 VC - I PP Fig. 11.11.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.11.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.11.5 ISO10605 Clamp Waveform +8 kV Fig. 11.11.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.12. XCEZ15V Characteristics Curves(Note) Fig. 11.12.1 ITLP - V TLP Fig. 11.12.2 VC - I PP Fig. 11.12.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.12.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.12.5 ISO10605 Clamp Waveform +8 kV Fig. 11.12.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.13. XCEZ16V Characteristics Curves(Note) Fig. 11.13.1 ITLP - V TLP Fig. 11.13.2 VC - I PP Fig. 11.13.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.13.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.13.5 ISO10605 Clamp Waveform +8 kV Fig. 11.13.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.14. XCEZ18V Characteristics Curves(Note) Fig. 11.14.1 ITLP - V TLP Fig. 11.14.2 VC - I PP Fig. 11.14.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.14.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.14.5 ISO10605 Clamp Waveform +8 kV Fig. 11.14.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.15. XCEZ20V Characteristics Curves(Note) Fig. 11.15.1 ITLP - V TLP Fig. 11.15.2 VC - I PP Fig. 11.15.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.15.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.15.5 ISO10605 Clamp Waveform +8 kV Fig. 11.15.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.16. XCEZ22V Characteristics Curves(Note) Fig. 11.16.1 ITLP - V TLP Fig. 11.16.2 VC - I PP Fig. 11.16.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.16.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.16.5 ISO10605 Clamp Waveform +8 kV Fig. 11.16.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.17. XCEZ24V Characteristics Curves(Note) Fig. 11.17.1 ITLP - V TLP Fig. 11.17.2 VC - I PP Fig. 11.17.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.17.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.17.5 ISO10605 Clamp Waveform +8 kV Fig. 11.17.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.18. XCEZ27V Characteristics Curves(Note) Fig. 11.18.1 ITLP - V TLP Fig. 11.18.2 VC - I PP Fig. 11.18.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.18.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.18.5 ISO10605 Clamp Waveform +8 kV Fig. 11.18.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.19. XCEZ30V Characteristics Curves(Note) Fig. 11.19.1 ITLP - V TLP Fig. 11.19.2 VC - I PP Fig. 11.19.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.19.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.19.5 ISO10605 Clamp Waveform +8 kV Fig. 11.19.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.20. XCEZ33V Characteristics Curves(Note) Fig. 11.20.1 ITLP - V TLP Fig. 11.20.2 VC - I PP Fig. 11.20.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.20.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.20.5 ISO10605 Clamp Waveform +8 kV Fig. 11.20.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.21. XCEZ36V Characteristics Curves(Note) Fig. 11.21.1 ITLP - V TLP Fig. 11.21.2 VC - I PP Fig. 11.21.3 IEC61000-4-2 Clamp Waveform +8 kV Fig. 11.21.4 IEC61000-4-2 Clamp Waveform -8 kV Fig. 11.21.5 ISO10605 Clamp Waveform +8 kV Fig. 11.21.6 ISO10605 Clamp Waveform -8 kV Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. circuit. 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

11.22. VC-IPP Peak Pulse and Clamp waveform measurement circuit Fig. 11.22.1 VC-IPP Peak Pulse Current (according to IEC61000-4-5 8/20 µs pulse) Fig. 11.22.2 Clamp waveform measurement circuit(according to IEC61000-4-2) Fig. 11.22.3 Clamp waveform measurement circuit(according to ISO10605) 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

Unit: mm Weight: 1.4 mg (typ.) Package Name(s) JEDEC: SOD-523 Nickname: ESC 2025-04-18 Rev.1.0 ©2025 Toshiba Electronic Devices & Storage Corporation

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