XB1008-QT MA-COM | Alldatasheet
Document overview
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Technical content
Features
Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias 100% RF, DC and Output Power Testing RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s two stage 10.0 -21.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 17.0 dB with a +18.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage with broadband performance at a very low cost. The device comes in an RoHS compliant 3x3mm QFN surface mount package offering excellent RF and thermal properties. This device is well suited for Microwave and Millimeter -wave Point -to-Point Radio, LMDS, SATCOM and VSAT applications.
Ordering Information
XB1008-QT-0G00 bulk quantity XB1008-QT-0G0T tape and reel XB1008-QT-EV1 evaluation module Functional Block Diagram Pin Configuration Pin No. Function Pin No. Function 1-2 Ground 10 RF Output
3 RF Input 11-12 Ground
4 Ground 13 Drain Bias
5 Gate Bias 14-16 Ground
Parameter Absolute Max. Supply Voltage (Vd) +4.3 VDC Supply Current (Id1) 180 mA Gate Bias Voltage (Vg) 0 V Input Power (Pin) +20.0 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to +85 °C Channel Temperature (Tch) 150 °C ESD Min. - Machine Model (MM) Class A ESD Min. - Human Body Model (HBM) Class 1A MSL Level MSL1 Channel temperature directly affects a device's MTTF. Channel tempera- ture should be kept as low as possible to maximize lifetime. 16 15 14 13 5 6 7 8 RFIn VG gnd RFOut gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd VD gnd
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 10.0-21.0 GHz XB1008-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Electrical Specifications: 10-21 GHz (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Input Return Loss (S11) dB - 12.0 - Output Return Loss (S22) dB - 12.0 - Small Signal Gain (S21) dB - 17.0 - Gain Flatness (S21) dB - +/-2.0 Reverse isolation (S12) dB - 65.0 - Noise Figure dB - 4.5 Output Power for 1dB Compression Point (P1dB) dBm - +18.0 - Saturated Output Power (Psat) dBm - +20.0 - Output Third Order Intercept dBm - +32.0 - Drain Bias Voltage (Vd) VDC - +4.0 +4.0 Gate Bias Voltage (Vg) VDC -1.0 -0.23 -0.1 Supply Current (Id) (Vd=4.0 V, Vg2=-0.5 V Typical) mA - 100 130
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 10.0-21.0 GHz XB1008-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves -20 -18 -16 -14 -12 -10 5 7 9 11 13 15 17 19 21 23 25 5 7 9 11 13 15 17 19 21 23 25 -25 -20 -15 -10 5 7 9 11 13 15 17 19 21 23 25 10 11 12 13 14 15 16 17 18 19 20 21 10 11 12 13 14 15 16 17 18 19 20 21 Id av(mA)=20 Id av(mA)=30 Id av(mA)=40 Id av(mA)=50 Id av(mA)=60 Id av(mA)=70 Id av(mA)=80 Id av(mA)=90 Id av(mA)=100 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
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Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 10.0-21.0 GHz XB1008-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves (cont.) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Pin = -10 dBm Pin = -8 dBm Pin = -6 dBm Pin = -4 dBm Pin = -2 dBm Pin = 0 dBm Pin = 2 dBm Pin = 4 dBm Pin = 6 dBm Pin = 8 dBm Pin = 10 dBm
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 10.0-21.0 GHz XB1008-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 MTTF These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabrica ting foundry. 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08 1.0E+09 1.0E+10 1.0E+11 1.0E+12 1.0E+13 1.0E+14 1.0E+15 20 30 40 50 60 70 80 90 100 110 120 Vdd = 4 V, Idd = 100 mA Vdd = 4 V, Idd = 130 mA 100 120 140 160 180 200 220 20 30 40 50 60 70 80 90 100 110 120 Vdd = 4 V, Idd = 100 mA Vdd = 4 V, Idd = 130 mA
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 10.0-21.0 GHz XB1008-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at Vd=4V with Id=90 mA. It is also recommended to use ac- tive biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon di- odes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 10.0-21.0 GHz XB1008-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices. Lead-Free Package Dimensions/Layout