XB1008-QT-EV1

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Document overview

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Technical content

Features

 Excellent Transmit LO/Output Buffer Stage  17 dB Small Signal Gain  20 dBm Psat  32 dBm Output IP3  4.5 dB Noise Figure  Variable Gain with Adjustable Bias  100% RF, DC and Output Power Testing  Lead-Free 3 mm 16-Lead QFN Package  RoHS* Compliant

Description

The XB1008 -QT is a two stage 10 - 21 GHz GaAs MMIC buffer amplifier that has a small signal gain of 17 dB with a 18 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage with broadband performance at a very low cost. The device comes in an RoHS compliant 3 mm QFN surface mount package offering excellent RF and thermal properties. This device is specifically designed for use in PtP radio applications and is well suited for other telecom applications such as SATCOM and VSAT. Part Number Package XB1008-QT-0G0T tape and reel XB1008-QT-EV1 evaluation module Functional Block Diagram Pin Configuration Pin No. Function 1-2, 4, 6-9, 11, 12, 14-16 Ground

3 RF Input

5 Gate Bias

10 RF Output

13 Drain Bias

• Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. Ordering Information1 1. Reference Application Note M513 for reel size information. 2. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. 16 15 14 13 5 6 7 8 GND GND RFIN RFOUT VD VG GNDGND GNDGNDGND GND GND GND GND GND

Rev. V2 XB1008-QT 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Electrical Specifications: 10 - 21 GHz, TA = +25°C Parameter Units Min. Typ. Max. Input Return Loss (S11) dB — 12 — Output Return Loss (S22) dB — 12 — Small Signal Gain (S21) dB — 17 — Gain Flatness (ΔS21) dB — +/-2 — Reverse isolation (S12) dB — 65 — Noise Figure dB — 4.5 — Output Power for 1dB Compression Point (P1dB) dBm — 18 — Saturated Output Power (PSAT) dBm — 20 — Output Third Order Intercept dBm — 32 — Drain Bias Voltage (VD) VDC — 4 4 Gate Bias Voltage (VG) VDC -1.0 -0.23 -0.1 Supply Current (ID) (VD = +4.0 V, VG2 = -0.5 V Typical) mA — 100 130 Absolute Maximum Ratings3 Parameter Absolute Maximum Supply Voltage 4.3 VDC Supply Current 180 mA Gate Bias Voltage 0 V Input Power 20 dBm Storage Temperature -65°C to +165°C Operating Temperature -55°C to +85°C Channel Temperature 150°C 3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices, MM Class A devices.

Rev. V2 XB1008-QT 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical Performance Curves 9 11 13 15 17 19 21 23 S21 (dB) Frequency (GHz) Small Signal Gain, VD = 4 V, 100 mA OIP3, VD = 4 V, 90 mA, PIN = 15 dBm Input Return Loss, VD = 4 V, 100 mA Output Return Loss, VD = 4 V, 100 mA 9 11 13 15 17 19 21 23 OIP3 (dBm) Frequency (GHz) -25 -20 -15 -10 9 11 13 15 17 19 21 23 S11 (dB) Frequency (GHz) -25 -20 -15 -10 9 11 13 15 17 19 21 23 S22 (dB) Frequency (GHz) OIP3, VD = 4 V, 20 - 100 mA, PIN = -15 dBm 9 11 13 15 17 19 21 23 ID = 20 mA ID = 30 mA ID = 40 mA ID = 50 mA ID = 60 mA ID = 70 mA ID = 80 mA ID = 90 mA ID = 100 mA OIP3 (dBm) Frequency (GHz)

Rev. V2 XB1008-QT 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical Performance Curves (cont.) MTTF These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabrica ting foundry. Output Power vs. Input Power, VD = 4 V, 100 mA -10 -8 -6 -4 -2 0 2 4 6 8 10

11 GHz

12 GHz

13 GHz

14 GHz

15 GHz

16 GHz

17 GHz

18 GHz

19 GHz

20 GHz

21 GHz

Output Power (dBm) Input Power (dBm) Output Power vs. Frequency, VD = 4 V, 100 mA 9 11 13 15 17 19 21 23 Pin = -10 dBm Pin = -8 dBm Pin = -6 dBm Pin = -4 dBm Pin = -2 dBm Pin = 0 dBm Pin = 2 dBm Pin = 4 dBm Pin = 6 dBm Pin = 8 dBm Pin = 10 dBm Output Power (dBm) Frequency (GHz) MTTF Hours vs. Package Base Temperature, VDD = 4 V Tch (max.) vs. Package Base Temperature, VDD = 4 V 1E+3 1E+4 1E+5 1E+6 1E+7 1E+8 1E+9 1E+10 1E+11 1E+12 1E+13 1E+14 1E+15 20 40 60 80 100 120 Idd = 100 mA Idd = 130 mA MTTF (hours) Package Base Temperature (°C) 100 120 140 160 180 200 220 20 40 60 80 100 120 Idd = 100 mA Idd = 130 mA Tch_max (°C) Package Base Temperature (°C)

Rev. V2 XB1008-QT 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at V D = 4 V with I D = 90 mA. It is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5 V. Typically the gate is protected with silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. Lead-Free Package Dimensions/Layout† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements.

Rev. V2 XB1008-QT 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A -COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale.