XB1007-BD

XB1007-BD_15 MA-COM | Alldatasheet

Document overview

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Technical content

Features

 Excellent Transmit LO/Output Buffer Stage  Compact Size  23.0 dB Small Signal Gain  +20.0 dBm P1dB Compression Point  4.5 dB Noise Figure  Variable Gain with Adjustable Bias  100% On-Wafer RF, DC and Output Power Testing  100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s two stage 4.0 -11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter -wave Point -to-Point Radio, LMDS, SATCOM and VSAT applications.

Ordering Information

XB1007-BD-000V “V” - vacuum release gel paks XB1007-BD-EV1 evaluation module Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +4.3 VDC Supply Current (Id1) 180 mA Gate Bias Voltage (Vg) 0 V Input Power (Pin) +20.0 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to +85 °C Channel Temperature (Tch) 175 °C Channel temperature directly affects a device's MTTF. Channel tempera- ture should be kept as low as possible to maximize lifetime. Chip Device Layout

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Electrical Specifications: 4-11 GHz (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Input Return Loss (S11) dB - 20.0 - Output Return Loss (S22) dB - 12.0 - Small Signal Gain (S21) dB - 23.0 - Gain Flatness (S21) dB - +/-1.5 Reverse Isolation (S12) dB - 65.0 - Noise Figure dB - 4.5 Output Power for 1dB Compression Point (P1dB)2 dBm - +20.0 - Saturated Output Power (Psat) dBm - +21.0 - Drain Bias Voltage (Vd2) VDC - +4.0 +4.0 Gate Bias Voltage (Vg2) VDC -1.0 -0.35 -0.1 Supply Current (Id) (Vd=4.0 V, Vg2=-0.5 V Typical) mA - 100 130 2. Measured using constant current

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves +95 Deg C -30 Deg C +25 Deg C -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 +95 Deg C -30 Deg C +25 Deg C -50 -45 -40 -35 -30 -25 -20 -15 -10 +95 Dec C -30 Deg C +25 Deg C *Includes fixture losses -30 -25 -20 -15 -10 +95 Deg C -30 Deg C +25 Deg C *Includes fixture losses

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves (cont.) +95 Deg C -30 Deg C +25 Deg C -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 +95 Deg C -30 Deg C +25 Deg C -45 -40 -35 -30 -25 -20 -15 -10 +95 Dec C -30 Deg C +25 Deg C *Includes fixture losses -30 -25 -20 -15 -10 +95 Deg C -30 Deg C +25 Deg C *Includes fixture losses 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 +95 deg C -30 deg C +25 deg C

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves (cont.) +95 Deg C -30 Deg C +25 Deg C -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 +95 Deg C -30 Deg C +25 Deg C -50 -45 -40 -35 -30 -25 -20 -15 -10 +95 Dec C -30 Deg C +25 Deg C *Includes fixture losses -30 -25 -20 -15 -10 +95 Deg C -30 Deg C +25 Deg C *Includes fixture losses 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 +95 deg C -30 deg C +25 deg C

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves (cont.) Vd=4.0V Vd=4.5V Vd=5.0 V Vd=4.0 V Vd=4.5 V Vd=5.0 V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

5.0 GHz

6.0 GHz

7.0 GHz

8.0 GHz

9.0 GHz

10.0 GHz

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 S-Parameters Typcial S-Parameter Data for XB1007-BD Vd=4.5 V, Id=130 mA Frequency S11 S11 S21 S21 S12 S12 S22 S22 (GHz) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang)

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Mechanical Drawing 1.100 (0.043) 2 3 0.241 (0.009) 0.841 (0.033) 1.100 (0.043)0.0 0.0 0.790 (0.031) 0.790 (0.031) 0.105 (0.004) (Note:Engineering designator is8MPA0811) Units:millimeters(inches) Bond pad dimensionsare shown to center of bond pad. Thickness:0.110 +/- 0.010 (0.0043 +/- 0.0004),Backside isground,Bond Pad/Backside Metallization:Gold Bond pad centersare approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RFIn) Bond Pad #2 (Vg1) Bond Pad #3 (Vd) Bond Pad #4 (RFOut) Bond Pad #5 (Vg2) Bias Arrangement RF In RF Out1 2 3 Vg1 Vd Vg2 Bypass Capacitors - See App Note [2]

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 MTTF These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabrica ting foundry. 1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08 1.0E+09 1.0E+10 1.0E+11 1.0E+12 1.0E+13 1.0E+14 1.0E+15 1.0E+16 20 30 40 50 60 70 80 90 100 110 120 Vdd = 4 V, Idd = 100 mA Vdd = 4 V, Idd = 130 mA 100 120 140 160 180 200 220 20 30 40 50 60 70 80 90 100 110 120 Vdd = 4 V, Idd = 100 mA Vdd = 4 V, Idd = 130 mA

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at Vd=4 V with Id=90 mA (Vg2 at approximately -0.5 V and Vg1 left open). It is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational am- plifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5 V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to se- quence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possi- ble. Additional DC bypass capacitance (~0.01 uF) is also recommended.

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 4.0-11.0 GHz XB1007-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices.