XB1005-BD

XB1005-BD_15 MA-COM | Alldatasheet

Document overview

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Technical content

Features

 High Dynamic Range  Excellent LO Driver/Buffer Amplifier  Low Noise or Power Bias Configurations  23.0 dB Small Signal Gain  2.7 dB Noise Figure at Low Noise Bias  +16 dBm P1dB Compression at Power Bias  100% On-Wafer RF, DC and Noise Figure Testing  100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s three stage 35.0 -45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.

Ordering Information

XB1005-BD-000V “V” - vacuum release gel paks XB1005-BD-EV1 evaluation module Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 180 mA Gate Bias Voltage (Vg) +0.3 V Input Power (Pin) +5 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to MTTF Table1 Channel Temperature (Tch) MTTF Table1 1. Channel temperature directly affects a device's MTTF. Chan- nel temperature should be kept as low as possible to maximize lifetime. Chip Device Layout

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Electrical Specifications: 35-45 GHz (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Input Return Loss (S11)3 dB 4.0 8.0 - Output Return Loss (S22)3 dB 9.0 17.0 - Small Signal Gain (S21)3 dB 20.0 23.0 27.0 Gain Flatness (S21) dB - +/-1.0 - Reverse Isolation (S12)3 dB 35.0 45.0 - Noise Figure (NF)4 dB - 2.7 3.5 Output Power for 1dB Compression Point (P1dB)1,2,3 dBm - +16.0 - Output Third Order Intercept Point (OIP3)1,2,3 dBm - +26.0 - Saturated Output Power (Psat)1,2,3 dBm +16.0 +18.0 - Drain Bias Voltage (Vd1,2,3) VDC -1.2 +3.5 +4.5 Gate Bias Voltage (Vg1,2,3) VDC - -0.4 +0.1 Supply Current (Id) (Vd=3.5 V, Vg=-0.4 V Typical) mA - 50 154 1. Optional low noise bias Vd1,2,3=3.5 V, Id=50 mA will typically yield 3-4 dB decreased P1dB and OIP3. 2. Measured using constant current.

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves Max Median Mean -3sigma -70 -60 -50 -40 -30 -20 -10 Max Median Mean -3sigma -20 -15 -10 Max Median Mean -3sigma -40 -35 -30 -25 -20 -15 -10 Max Median Mean -3sigma 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Max Median Mean -3sigma Max Median Mean Min

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves (cont.) Max Median Mean -3sigma -70 -60 -50 -40 -30 -20 -10 Max Median Mean -3sigma -25 -20 -15 -10 Max Median Mean -3sigma -35 -30 -25 -20 -15 -10 Max Median Mean -3sigma Max Median Mean Min Max Median Mean -3sigma 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Max Median Mean -3sigma

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves (cont.) 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) XB1005_S21 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) XB1005_S12 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA -80 -70 -60 -50 -40 -30 -20 -10 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) XB1005_S11 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA -16 -14 -12 -10 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) XB1005_S22 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA -40 -35 -30 -25 -20 -15 -10

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 S-Parameters Typical S-Parameter Data for XB1005 Vd=3.5 V Id1=9 mA Id2=16 mA Id3=25 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ang o dB Ang o dB Ang o dB Ang o

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 S-Parameters (cont.) Typical S-Parameter Data for XB1005 (cont'd) Vd=3.5 V Id1=9 mA Id2=16 mA Id3=25 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 S-Parameters (cont.) Typical S-Parameter Data for XB1005 Vd=4.5 V Id1=28 mA Id2=42 mA Id3=84 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ang o dB Ang o dB Ang o dB Ang o

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 S-Parameters (cont.) Typical S-Parameter Data for XB1005 (cont'd) Vd=4.5 V Id1=28 mA Id2=42 mA Id3=84 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note:Engineering designator is40LN3UA0063) Units:millimeters(inches) Bond pad dimensionsare shown to center of bond pad. Thickness:0.110 +/- 0.010 (0.0043 +/- 0.0004),Backside isground,Bond Pad/Backside Metallization:Gold Bond pad centersare approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RFIn) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (Vd3) Bond Pad #5 (RFOut) Bond Pad #6 (Vg3) Bond Pad #7 (Vg2) Bond Pad #8 (Vg1) 0.577 (0.023) 0.699 (0.028) 1.255 (0.049) 1.054 (0.042) 0.655 (0.026) 1.300 (0.051) 1.715 (0.067) 0.0 0.0 2.400 (0.095) 2 3 4 678 1.514 (0.060) 1.113 (0.044) 2 3 4 678 Vd1,2,3 RF Out RF In Vg1,2,3 Vd1,2,3 RFOut Vg1,2,3 RFIn

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 MTTF Tables These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabrica ting foundry. Backplate Temperature Channel Temperature Rth MTTF Hours FITs 55 deg Celsius 82.9 deg Celsius 159.3° C/W 8.36E+10 1.20E-02 75 deg Celsius 105.0 deg Celsius 171.3° C/W 5.382E+09 1.86E-01 95 deg Celsius 126.8 deg Celsius 182.0° C/W 4.796E+08 2.09E+00 Bias Conditions: Vd1=Vd2=Vd3=3.5 V, Id1=9 mA, Id2=16 mA, Id3=25 mA Backplate Temperature Channel Temperature Rth MTTF Hours FITs 55 deg Celsius 157.3 deg Celsius 147.6° C/W 3.00E+07 3.34E+01 75 deg Celsius 184.0 deg Celsius 157.3° C/W 3.07E+06 3.26E+02 95 deg Celsius 210.1 deg Celsius 166.1° C/W 4.21E+05 2.37E+03 Bias Conditions: Vd1=Vd2=Vd3=4.5 V, Id1=28 mA, Id2=42 mA, Id3=84 mA

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 App Note [1] Biasing - As shown in the bonding diagram, this device can be operated with all three stages in parallel, and can be biased for low noise performance or high power performance. Low noise bias is nominally Vd=3.5V, Id=50mA. More controlled performance will be obtained by separately biasing Vd1, Vd2 and Vd3 each at 3.5V, with Id1=9mA, Id2=16mA, Id3=25mA. Power bias may be as high as Vd=4.5V, Id=154mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1, Vd2 and Vd3 each at 4.5V, with Id1=28mA, Id2=42mA, Id3=84mA. It is also recommended to use active biasing to keep the cur- rents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the cur- rent. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.4V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before apply- ing the positive drain supply. App Note [2] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pf) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pf) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Device Schematic Typical Application R=25 R=75 R=16.7 R=12.5 R=20 R=25 R=75 R=10 R=7.14 R=25 R=75 R=20 R=5R=5 R=5R=5 RF Out RF In Vg1 Vd1 Vg2 Vd2 Vg3 Vd3

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Buffer Amplifier 35.0-45.0 GHz XB1005-BD ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices.