X60008E-41_06 INTERSIL | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • Output Voltage: 4.096V
  • Absolute Initial Accuracy: ±5.0mV
  • Ultra Low Power Supply Current: 500nA
  • Low Temperature Coefficient: 20ppm/°C
  • 10 mA Source & Sink Current Capability
  • 10 ppm/1000hrs Long Term Stability
  • Supply Voltage Range: 4.5V to 9.0V
  • 5kV ESD (Human Body Model)
  • Standard Package: SOIC-8
  • Temp Range: -40°C to +85°C
  • Pb-free Plus Anneal Available (RoHS Compliant)

Applications

  • High Resolution A/Ds and D/As
  • Precision Current Sources
  • Smart Sensors
  • Digital Meters
  • Precision Regulators
  • Strain Gage Bridges
  • Calibration Systems
  • Precision Oscillators
  • Threshold Detectors
  • V-F Converters
  • Battery Management Systems
  • Servo Systems

Ordering Information

TEMP. RANGE (°C) PACKAGE PKG. DWG. # X60008EIS8-41 X60008E I41 -40 to 85 8 Ld SOIC MDP0027 X60008EIS8- 41T1 X60008E I41 -40 to 85 8 Ld SOIC Tape and Reel MDP0027 X60008EIS8Z-41 (Note) X60008E ZI41 -40 to 85 8 Ld SOIC (Pb-free) MDP0027 NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. Data Sheet June 27, 2006

2 FN8144.1 June 27, 2006 ABSOLUTE MAXIMUM RATINGS Max Voltage Applied (*) note: maximum duration = 10 seconds RECOMMENDED OPERATING CONDITIONS COMMENT Absolute Maximum Ratings are limits which may result in impaired reliability and/or permanent damage to the device. These are stress ratings provided for informa-tion only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification are not implied. For guaranteed specifications and test conditions, see Electrical Specifications. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Typical Application * Also see Figure 3 in “Applications Information” on page 7. Package Diagram Pin Configurations TEMPERATURE MIN MAX Industrial -40°C +85°C VIN = +5.0V 0.1µF Serial Bus VIN VOUT GND X60008-41 Enable SCK SDAT A/D Converter 16 to 24-bit REF IN 10µF 0.001µF(*) SOIC VIN DNC GND X60008-XX DNC DNC VOUT DNC GND PIN NAME DESCRIPTION GND Ground Connection VIN Power Supply Input Connection VOUT Voltage Reference Output Connection DNC Do Not Connect; Internal Connection – Must Be Left Floating X60008E-41

3 FN8144.1 June 27, 2006 Electrical Specifications Operating Conditions: VIN = 5.0V, IOUT = 0mA, COUT = 0.001µF, TA = -40 to +85°C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VOUT Output Voltage 4.096 V VOA VOUT Accuracy X60008E-41 T A = 25°C -5.0 +5.0 mV IIN Supply Current 500 900 nA VIN Input Voltage Range 4.5 9.0 V TC VOUT Output Voltage Temperature Coefficient(1) X60008E-41 20 ppm/°C ΔVOUT/ΔVIN Line Regulation +4.5V ≤ VIN ≤ +8.0V 150 µ V/V ΔVOUT/ΔIOUT Load Regulation 0mA ≤ ISOURCE ≤ 10mA -10mA ≤ ISINK ≤ 0mA 100 µV/mA ΔVOUT/Δt Long Term Stability T A = 25°C 10 ppm/1000Hrs ΔVOUT/ΔTA Thermal Hysteresis(2) ΔT = -40°C to +85°C 100 ppm ISC Short Circuit Current(3) TA = 25°C 50 80 mA VN Output Voltage Noise 0.1Hz to 10Hz 30 µ Vpp NOTE: 1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided by the temperature range; in this case, -40°C to +85°C = 125°C. 2. Thermal Hysteresis is the change in VOUT created by package stress @ TA = 25°C after temperature cycling. VOUT is read initially at TA = 25°C; the X60008 is then cycled between Hot (85°C) and Cold (-40°C) before a second VOUT measurement is taken at 25°C. The deviation between the initial VOUT reading and the second VOUT reading is then expressed in ppm. 3. Guaranteed by Device Characterization X60008E-41

4 FN8144.1 June 27, 2006 Typical Performance Curves (VIN = 5.0V, IOUT = 0mA, TA = 25°C, unless otherwise specified) +85°C -40°C Unit 3, IIN = 700nA Unit 1, IIN = 360nA Unit 2, IIN = 520nA VIN (V) VIN (V) VOUT (V) DELTA VOUT (μV) (normailized to 4.096V at VIN = 5.0V) (normailized to VIN = 5.0V) LINE REGULATION LINE REGULATION (3 Representative Units) -100 -5 0 100 150 200 250 300 4.0959 4.09595 4.096 4.09605 4.0961 4.09615 4.0962 4.09625 4.0963 +25°C LOAD REGULATION OUTPUT CURRENT (mA) DELTA VOUT (mV) -40°C +25°C+85°C -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -20 -15 -10 -5 0 5 10 15 20 SINKING SOURCING 0.1Hz to 10Hz VOUT NOISE

1 Sec/div

10μV/div Band Pass Filter with 1 zero at .1Hz and 2 poles at 10 Hz X60008E-41

5 FN8144.1 June 27, 2006 Typical Performance Curves (VIN = 5.0V, IOUT = 0mA, TA = 25°C, unless otherwise specified) (Continued) 10mA LOAD TRANSIENT RESPONSE 500mV/DIV CL = .001μF IL = -10mA IL = +10mA 2mS/DIV 50μA LOAD TRANSIENT RESPONSE 100mV/DIV 500μSEC/DIV CL = .001μF IL = -50μA IL = +50μA LINE TRANSIENT RESPONSE LINE TRANSIENT RESPONSE 200mV/DIV 500μSEC/DIV 200mV/DIV 500μSEC/DIV CL = 0 C L = .001μF ΔVIN = -500mV ΔVIN = +500mV ΔVIN = -500mV ΔVIN = +500mV X60008E-41

6 FN8144.1 June 27, 2006 Typical Performance Curves (VIN = 5.0V, IOUT = 0mA, TA = 25°C, unless otherwise specified) (Continued) FREQUENCY (Hz) VOUT vs TEMPERATURE Normalized to 25°C (3 Representative Units) TEMPERATURE (°C) VOUT (V) Unit 1, IIN = 360nA Unit 3, IIN = 700nAUnit 2, IIN = 520nA PSRR vs CAP Load No Load 1nF Load 10nF Load 100nF Load 4.09 4.0912 4.0924 4.0936 4.0948 4.096 4.0972 4.0984 4.0996 -40 -15 10 35 60 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 11 0 100 1000 10000 100000 1000000 PSRR (dB) ZOUT vs FREQUENCY FREQUENCY (Hz) ZOUT (Ω) no Load 1nF Load 10nF Load 100nF Load IIN (nA) VIN (V) -40°C 25°C 85°C IIN vs VIN 100 150 200 250 300 350 1 10 100 1000 10000 100000 100 200 300 400 500 600 700 800 IIN (nA) VIN (V) IIN vs VIN (3 Representative Units) TURN-ON TIME -1 1 3 5 7 9 11 VIN & VOUT (V) 100 200 300 400 500 600 700 800 900 1000 Unit 1 Unit 2 Unit 3 TIME (mSec) VIN VOUT X60008E-41

7 FN8144.1 June 27, 2006 Applications Information FGA Technology The X60008 series of voltage references use the floating gate technology to create references with very low drift and supply current. Essentially the charge stored on a floating gate cell is set precisely in manufacturing. The reference voltage output itself is a buffered version of the floating gate voltage. The resulting reference device has excellent characteristics which are unique in the industry: very low temperature drift, high initial accuracy, and almost zero supply current. Also, the reference voltage itself is not limited by voltage bandgaps or zener settings, so a wide range of reference voltages can be programmed (standard voltage settings are provided, but customer-specific voltages are available). The process used for these reference devices is a floating gate CMOS process, and the amplifier circuitry uses CMOS transistors for amplifier and output transistor circuitry. While providing excellent accuracy, there are limitations in output noise level and load regulation due to the MOS device characteristics. These limitations are addressed with circuit techniques discussed in other sections. Nanopower Operation Reference devices achieve their highest accuracy when powered up continuously, and after initial stabilization has taken place. This drift can be eliminated by leaving the power-on continuously. The X60008 is the first high precision voltage reference with ultra low power consumption that makes it practical to leave power-on continuously in battery operated circuits. The X60008 consumes extremely low supply current due to the proprietary FGA technology. Supply current at room temperature is typically 500nA which is 1 to 2 orders of magnitude lower than competitive devices. Application circuits using battery power will benefit greatly from having an accurate, stable reference which essentially presents no load to the battery. In particular, battery powered data converter circuits that would normally require the entire circuit to be disabled when not in use can remain powered up between conversions as shown in Figure 1. Data acquisition circuits providing 12 to 24 bits of accuracy can operate with the reference device continuously biased with no power penalty, providing the highest accuracy and lowest possible long term drift. Other reference devices consuming higher supply currents will need to be disabled in between conversions to conserve battery capacity. Absolute accuracy will suffer as the device is biased and requires time to settle to its final value, or, may not actually settle to a final value as power-on time may be short. FIGURE 1. Board mounting Considerations For applications requiring the highest accuracy, board mounting location should be reviewed. Placing the device in areas subject to slight twisting can cause degradation of the accuracy of the reference voltage due to die stresses. It is normally best to place the device near the edge of a board, or the shortest side, as the axis of bending is most limited at that location. Obviously mounting the device on flexprint or extremely thin PC material will likewise cause loss of reference accuracy. Noise Performance and Reduction: The output noise voltage in a 0.1Hz to 10Hz bandwidth is typically 30µVp-p. This is shown in the plot in the Typical Performance Curves. The noise measurement is made with a bandpass filter made of a 1 pole high-pass filter with a corner frequency at .1Hz and a 2-pole low-pass filter with a corner frequency at 12.6Hz to create a filter with a 9.9Hz bandwidth. Noise in the 10KHz to 1MHz bandwidth is approximately 400µVp-p with no capacitance on the output, as shown in Figure 2. These noise measurements are made with a 2 decade bandpass filter made of a 1 pole high-pass filter with a corner frequency at 1/10 of the center frequency and 1-pole low-pass filter with a corner frequency at 10 times the center frequency. Figure 2 also shows the noise in the 10KHz to 1MHz band can be reduced to about 50µVp-p using a .001µF capacitor on the output. Noise in the 1KHz to 100KHz band can be further reduced using a 0.1µF capacitor on the output, but noise in the 1Hz to 100Hz band increases due to instability of the very low power amplifier with a 0.1µF capacitance load. For load capacitances above .001µF the noise reduction network shown in Figure 3 is recommended. This network reduces noise sig-nificantly over the full bandwidth. As shown in Figure 2, noise is reduced to less than 40µVp-p from 1Hz to 1MHz using this network with a .01µF capacitor and a 2kΩ resistor in series with a 10µF capacitor. VIN = 4.5 - 9V 0.001µF Serial Bus VIN VOUT GND X60008-41 REF IN Enable SCK SDAT A/D Converter 12 to 24-bit 0.01µF10µF X60008E-41

9 FN8144.1 June 27, 2006 Typical Application Circuits Precision 4.096V, 50mA Reference. VIN = 5.2V to 9V 2N2905 4.096V/50mA 0.001µF VIN VOUT GND X60008-41 Kelvin Sensed Load 0.1µF 4.5V to 9V VIN VOUT GND X60008-41 VOUT Sense Load R = 200Ω VIN VOUT X60008-41 GND 4.5V to 9V 0.1µF 0.001µF VOUT VCC RH RL X9119 VSS SDA SCL 2-Wire Bus VOUT (buffered) 4.096V Full Scale Low-Drift 10-bit Adjustable Voltage Source X60008E-41

10 FN8144.1 June 27, 2006 X60008E-41 Small Outline Package Family (SO) GAUGE PLANE A1 L DETAIL X 4° ±4° SEATING PLANE e H b C 0.010 BM CA0.004 C

0.010 BM CA

B D (N/2)1 E1E NN (N/2)+1 A PIN #1 I.D. MARK h X 45° A SEE DETAIL “X” c 0.010 MDP0027 SMALL OUTLINE PACKAGE FAMILY (SO) SYMBOL SO-8 SO-14 SO16 (0.150”) SO16 (0.300”) (SOL-16) SO20 (SOL-20) SO24 (SOL-24) SO28 (SOL-28) TOLERANCE NOTES N 8 14 16 16 20 24 28 Reference - Rev. L 2/01 NOTES: 1. Plastic or metal protrusions of 0. 006” maximum per side are not included. 2. Plastic interlead protrusions of 0. 010” maximum per side are not included. 3. Dimensions “D” and “E1” are measured at Datum Plane “H”. 4. Dimensioning and tolerancing per ASME Y14.5M -1994