X5328 RENESAS | Alldatasheet

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  • Manufacturer or author: Renesas Electronics Corporation
  • PDF pages: 19

Technical content

FN8132 Rev 3.00 Page 1 of 18 Nov 11, 2021 © 2005 Renesas Electronics FN8132 Rev 3.00 Nov 11, 2021 X5328, X5329 CPU Supervisor with 32Kbit SPI EEPROM DATASHEET The X5328 and X5329 devices combine three popular functions, Power-on Reset Control, Supply Voltage Supervision, and Block Lock Protect Serial EEPROM Memory in one package. This combination lowers system cost, reduces board space requirements, and increases reliability. Applying power to the device activates the power-on reset circuit which holds RESET /RESET active for a period of time. This allows the power supply and oscillator to stabilize before the processor can execute code. The device’s low VCC detection circuitry protects the user’s system from low voltage conditions by holding RESET/RESET active when VCC falls below a minimum VCC trip point. RESET/RESET remains asserted until VCC returns to proper operating level and stabilizes. Five industry standard VTRIP thresholds are available, however, the unique circuits allow the threshold to be reprogrammed to meet custom requirements or to fine-tune the threshold in applications requiring higher precision.

FEATURES

  • Low V CC detection and reset assertion —Five standard reset threshold voltages —Re-program low V CC reset threshold voltage using special programming sequence —Reset signal valid to V CC = 1V
  • Long battery life with low power consumption —<1µA max standby current —<400µA max active current during read
  • 32Kbits of EEPROM
  • Built-in inadvertent write protection —Power-up/power-down protection circuitry —Protect 0, 1/4, 1/2 or all of EEPROM array with Block Lock ™ protection —In circuit programmable ROM mode
  • 2MHz SPI interface modes (0,0 & 1,1)
  • Minimize EEPROM programming time —32-byte page write mode —Self-timed write cycle —5ms write cycle time (typical)
  • 2.7V to 5.5V and 4.5V to 5.5V power supply operation
  • Available packages —8 Ld SOIC
  • Pb-free plus anneal available (RoHS compliant) BLOCK DIAGRAM Data Register Command Decode & Control Logic SI SO SCK CS VCC Reset Timebase Power-on and Generation VTRIP RESET/RESET Reset Low Voltage Status Register Protect Logic 8Kbits 8Kbits 16Kbits EEPROM Array WP X5328 = RESET X5329 = RESET

X5328, X5329 FN8132 Rev 3.00 Page 2 of 18 Nov 11, 2021

Ordering Information

(Notes 2, 3) PART MARKING VCC RANGE (V) VTRIP RANGE (V) PACKAGE DESCRIPTION (RoHS Compliant) PKG. DWG # Carrier Type (Note 1) TEMP RANGE (°C) RESET ACTIVE LOW X5328S8Z-4.5A X5328 ZAL X5328S8IZ-4.5A X5328 ZAM -40 to 85°C X5328S8Z X5328 Z 4.5-5.5 4.25-4.5 Tube 0 to 70°C X5328S8ZT1 Reel, 2.5k X5328S8IZ X5328 ZI Tube -40 to 85°C X5328S8IZT1 Reel, 2.5k X5328S8Z-2.7A X5328 ZAN 2.7-5.5 2.85-3.0 Tube 0 to 70°C X5328S8IZ-2.7A X5328 ZAP -40 to 85°C X5328S8Z-2.7 X5328 ZF 2.7-5.5 2.55-2.7 Tube 0 to 70°C X5328S8Z-2.7T1 Reel, 2.5k 0 to 70°C X5328S8IZ-2.7 X5328 ZG Tube -40 to 85°C X5328S8IZ-2.7T1 Reel, 2.5k -40 to 85°C RESET ACTIVE HIGH X5329S8Z-4.5A X5329 ZAL X5329S8IZ-4.5A X5329 ZAM -40 to 85°C X5329S8Z X5329 Z 4.5-5.5 4.25-4.5 Tube 0 to 70°C X5329S8ZT1 Reel, 2.5k 0 to 70°C X5329S8IZ X5329 ZI Tube -40 to 85°C X5329S8IZT1 Reel, 2.5k -40 to 85°C X5329S8Z-2.7A X5329 ZAN 2.7-5.5 2.85-3.0 Tube 0 to 70°C X5329S8Z-2.7 X5329 ZF X5329S8Z-2.7T1 Reel, 2.5k X5329S8IZ-2.7T1 X5329 ZG Reel, 2.5k -40 to 85°C NOTES: 1. See TB347 for details about reel specifications. 2. These Pb-free plastic packaged products empl oy special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J-STD-020. 3. For Moisture Sensitivity Level (MSL), see the X5328, X5329 product pages. For more information about MSL, see TB363.

X5328, X5329 FN8132 Rev 3.00 Page 3 of 18 Nov 11, 2021 PIN DESCRIPTION PIN CONFIGURATION Pin Number Name Function 1C S Chip Select Input. CS HIGH, deselects the device and the SO output pin is at a high impedance state. Unless a nonvolatile write cycle is underway, the device will be in the standby power mode. CS LOW enables the device, placing it in the active power mode. Prior to the start of any operation after power-up, a HIGH to LOW transition on CS is required. 2S O Serial Output. SO is a push/pull serial data output pin. A read cycle shifts data out on this pin. The falling edge of the serial clock (SCK) clocks the data out. 5S I Serial Input. SI is a serial data input pin. Input all opcodes, byte addresses, and memory data on this pin. The rising edge of the serial clock (SCK) latches the input data. Send all opcodes (Table 1), addresses and data MSB first. 6S C K Serial Clock. The Serial Clock controls the serial bus timing for data input and output. The rising edge of SCK latches in the opcode, address, or data bits present on the SI pin. The falling edge of SCK changes the data output on the SO pin. 3W P Write Protect. The WP pin works in conjunction with a nonvolatile WPEN bit to “lock” the setting of the Watchdog Timer control and the memory write protect bits. 4V SS Ground 8V CC Supply Voltage

7 RESET /

Reset Output. RESET/RESET is an active LOW/HIGH, open drain output which goes active whenever VCC falls below the minimum VCC sense level. It remains active until VCC rises above the minimum VCC sense level for 200ms. RESET/RESET goes active on power-up at about 1V and remains active for 200ms after the power supply stabilizes.

8 Ld SOIC

operation on a simple four-wire bus. minimum data retention of 100 years. must be LOW during the entire operation. start it again to resume operations where left off. the completion of a valid Write Cycle. *Bits (5,4) should be written as ‘1’ only. “0”, no write is in progress. Table 1. Instruction Set Note: *Instructions are shown MSB in leftmost pos ition. Instructions are transferred MSB first. Table 2. Block Protect Matrix

0 X X Protected Protected Protected

1 X 1 Protected Writable Writable

one quarter, one half, all or none of the EEPROM array. bits from inadvertent corruption. disables nonvolatile writes to the device’s Status Register. writes to the Status Register operate normally. Figure 5. Read EEPROM Array Sequence

X5328, X5329 FN8132 Rev 3.00 Page 8 of 18 Nov 11, 2021 Read Sequence When reading from the EEPROM memory array, CS is first pulled low to select the device. The 8-bit READ instruction is transmitted to the device, followed by the 16-bit address. After the READ opcode and address are sent, the data stored in the memory at the selected address is shifted out on the SO line. The data stored in memory at the next address can be read sequentially by continuing to provide clock pulses. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to address $0000 allowing the read cycle to be continued indefinitely. The read operation is terminated by taking CS high. Refer to the Read EEPROM Array Sequence (Figure 1). To read the Status Register, the CS line is first pulled low to select the device followed by the 8-bit RDSR instruction. After the RDSR opcode is sent, the contents of the Status Register are shifted out on the SO line. Refer to the Read Status Register Sequence (Figure 2). Write Sequence Prior to any attempt to write data into the device, the “Write Enable” Latch (WEL) must first be set by issuing the WREN instruction (Figure 3). CS is first taken LOW, then the WREN instruction is clocked into the device. After all eight bits of the instruction are transmitted, CS must then be taken HIGH. If the user continues the Write Operation without taking CS HIGH after issuing the WREN instruction, the Write Operation will be ignored. To write data to the EEPROM memory array, the user then issues the WRITE instruction followed by the 16-bit address and then the data to be written. Any unused address bits are specified to be “0’s”. The WRITE operation minimally takes 32 clocks. CS must go low and remain low for the duration of the operation. If the address counter reaches the end of a page and the clock continues, the counter will roll back to the first address of the page and overwrite any data that may have been previously written. For the Page Write Operation (byte or page write) to be completed, CS can only be brought HIGH after bit 0 of the last data byte to be written is clocked in. If it is brought HIGH at any other time, the write operation will not be completed (Figure 4). To write to the Status Register, the WRSR instruction is followed by the data to be written (Figure 5). Data bits 0 and 1 must be “0”. While the write is in progress following a Status Register or EEPROM Sequence, the Status Register may be read to check the WIP bit. During this time the WIP bit will be high. OPERATIONAL NOTES The device powers-up in the following state:

  • The device is in the low power standby state.
  • A HIGH to LOW transition on CS is required to enter an active state and receive an instruction.
  • SO pin is high impedance.
  • The Write Enable Latch is reset.
  • The Flag Bit is reset.
  • Reset Signal is active for t PURST. Data Protection The following circuitry has been included to prevent inadvertent writes:
  • A WREN instruction must be issued to set the Write Enable Latch.
  • C S must come HIGH at the proper clock count in order to start a nonvolatile write cycle.

Figure 9. Status Register Write Sequence

X5328, X5329 FN8132 Rev 3.00 Page 11 of 18 Nov 11, 2021 ABSOLUTE MAXIMUM RATINGS Voltage on any pin with COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device (at these or any other conditions above those listed in the operational sections of this specification) is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.) CAPACITANCE T A = +25°C, f = 1MHz, VCC = 5V Notes: (1) V IL min. and VIH max. are for reference only and are not tested. (2) This parameter is periodically sampled and not 100% tested. Symbol Parameter Limits Unit Test ConditionsMin. Typ. Max. ICC1 VCC Write Current (Active) 5 mA SCK = V CC x 0.1/VCC x 0.9 @ 2MHz, SO = Open ICC2 VCC Read Current (Active) 0.4 mA SCK = V CC x 0.1/VCC x 0.9 @ 2MHz, SO = Open ISB VCC Standby Current 1 µA CS = VCC, VIN = VSS or VCC, VCC = 5.5V ILI Input Leakage Current 0.1 10 µA V IN = VSS to VCC ILO Output Leakage Current 0.1 10 µA V OUT = VSS to VCC VIL(1) Input LOW Voltage -0.5 V CC x 0.3 V VIH(1) Input HIGH Voltage V CC x 0.7 V CC + 0.5 V VOL1 Output LOW Voltage 0.4 V V CC > 3.3V, IOL = 2.1mA VOL2 Output LOW Voltage 0.4 V 2V < V CC  3.3V, IOL = 1mA VOL3 Output LOW Voltage 0.4 V V CC  2V, IOL = 0.5mA VOH1 Output HIGH Voltage V CC - 0.8 V V CC > 3.3V, IOH = -1.0mA VOH2 Output HIGH Voltage V CC - 0.4 V 2V < V CC  3.3V, IOH = -0.4mA VOH3 Output HIGH Voltage V CC - 0.2 V V CC  2V, IOH = -0.25mA VOLS Reset Output LOW Voltage 0.4 V I OL = 1mA Symbol Test Max. Unit Conditions COUT(2) Output Capacitance (SO, RESET, RESET) 8 pF V OUT = 0V CIN(2) Input Capacitance (SCK, SI, CS, WP)6 p F V IN = 0V RECOMMENDED OPERATING CONDITIONS Temperature Min. Max. Commercial 0°C 70°C Industrial -40°C +85°C Voltage Option Supply Voltage -2.7 or -2.7A 2.7V to 5.5V Blank or -4.5A 4.5V-5.5V

X5328, X5329 FN8132 Rev 3.00 Page 12 of 18 Nov 11, 2021 EQUIVALENT A.C. LOAD CIRCUIT AT 5V VCC A.C. TEST CONDITIONS A.C. CHARACTERISTICS (Over recommended operating conditions, unless otherwise specified) Serial Input Timing Output 100pF 4.6k RESET/RESET 30pF 2.06k 3.03k Input pulse levels V CC x 0.1 to VCC x 0.9 Input rise and fall times 10ns Input and output timing level V CC x0.5 Symbol Parameter 2.7-5.5V UnitMin. Max. fSCK Clock Frequency 0 2 MHz tCYC Cycle Time 500 ns tLEAD CS Lead Time 250 ns tLAG CS Lag Time 250 ns tWH Clock HIGH Time 200 ns tWL Clock LOW Time 250 ns tSU Data Setup Time 50 ns tH Data Hold Time 50 ns tRI(3) Input Rise Time 100 ns tFI(3) Input Fall Time 100 ns tCS CS Deselect Time 500 ns tWC(4) Write Cycle Time 10 ms

X5328, X5329 FN8132 Rev 3.00 Page 13 of 18 Nov 11, 2021 Serial Input Timing Serial Output Timing Notes: (3) This parameter is periodically sampled and not 100% tested. (4) t WC is the time from the rising edge of CS after a valid write sequence has been sent to the end of the self-timed internal nonvolatile write cycle. Serial Output Timing SCK CS SI SO MSB IN tSU tRI tLAGtLEAD tH LSB IN tCS tFI High Impedance Symbol Parameter 2.7-5.5V UnitMin. Max. fSCK Clock Frequency 0 2 MHz tDIS Output Disable Time 250 ns tV Output Valid from Clock Low 250 ns tHO Output Hold Time 0 ns tRO(3) Output Rise Time 100 ns tFO(3) Output Fall Time 100 ns SCK CS SO SI MSB Out MSB–1 Out LSB Out ADDR LSB IN tCYC tV tHO tWL tWH tDIS tLAG

X5328, X5329 FN8132 Rev 3.00 Page 14 of 18 Nov 11, 2021 Power-Up and Power-Down Timing RESET Output Timing Note: (5) This parameter is periodically sampled and not 100% tested. Symbol Parameter Min. Typ. Max. Unit VTRIP Reset Trip Point Voltage, X5328-4.5A, X5328-4.5A Reset Trip Point Voltage, X5328, X5329 Reset Trip Point Voltage, X5328-2.7A, X5329-2.7A Reset Trip Point Voltage, X5328-2.7, X5329-2.7 4.5 4.25 2.85 2.55 4.63 4.38 2.93 2.63 4.75 4.5 3.0 2.7 V VTH VTRIP Hysteresis (HIGH to LOW vs. LOW to HIGH VTRIP voltage) 20 mV tPURST Power-up Reset Time Out 100 200 280 ms tRPD(5) VCC Detect to Reset/Output 500 ns tF(5) VCC Fall Time 100 µs tR(5) VCC Rise Time 100 µs VRVALID Reset Valid VCC 1V VCC tPURST tR tF tRPD RESET (X5328)

0 Volts

RESET (X5329) VTRIP tPURST

X5328, X5329 FN8132 Rev 3.00 Page 15 of 18 Nov 11, 2021 VTRIP Set Conditions VTRIP Reset Conditions SCK SI VP VP CS tVPS tVPH tPtVPS tVPH tRP tVPO tVPO tTSU tTHD VTRIPVCC SCK SI VCC VP CS tVPS tVPH tPtVPS tVP1 tRP tVPO tVPO VCC* *VCC > Programmed VTRIP

X5328, X5329 FN8132 Rev 3.00 Page 16 of 18 Nov 11, 2021 VTRIP Programming Specifications VCC = 1.7-5.5V; Temperature = 0°C to 70°C Parameter Description Min. Max. Unit tVPS SCK VTRIP Program Voltage Setup time 1 µs tVPH SCK VTRIP Program Voltage Hold time 1 µs tP VTRIP Program Pulse Width 1 µs tTSU VTRIP Level Setup time 10 µs tTHD VTRIP Level Hold (stable) time 10 ms tWC VTRIP Write Cycle Time 10 ms tRP VTRIP Program Cycle Recovery Period (Between successive programming cycles) 10 ms tVPO SCK VTRIP Program Voltage Off time before next cycle 0 ms VP Programming Voltage 15 18 V VTRAN VTRIP Programed Voltage Range 1.7 5.0 V Vta1 Initial VTRIP Program Voltage accuracy (VCC applied-VTRIP) (Programmed at 25°C.) -0.1 +0.4 V Vta2 Subsequent VTRIP Program Voltage accuracy [(VCC applied-Vta1)-VTRIP] (Programmed at 25°C.) -25 +25 mV Vtr VTRIP Program Voltage repeatability (Successive program operations.) (programmed at 25°C) -25 +25 mV Vtv VTRIP Program variation after programming (0-75°C). (programmed at 25°C) -25 +25 mV VTRIP programming parameters are periodically sampled and are not 100% tested.

X5328, X5329 FN8132 Rev 3.00 Page 17 of 18 Nov 11, 2021 TYPICAL PERFORMANCE VCC Supply Current vs. Temperature (ISB) VTRIP vs. Temperature (programmed at 25°C) tPURST vs. Temperature 5.025 5.000 4.975 3.525 3.500 3.475 2.525 2.500 2.475 02 5 8 5 Voltage Temperature VTRIP = 5V VTRIP = 3.5V VTRIP = 2.5V 200 195 190 185 180 175 170 165 160 -40 25 90 Degrees °C 205 Time (ms) (VCC = 3V, 5V) -40C 25C 90C Temp°C Isb (µA)

Revision History

The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION CHANGE Nov 11, 2021 3.00 Removed About Intersil section. Removed TSSOP and PDIP information from document. Updated Pin Configuration. Updated Ordering information table formatting. Oct16, 2015 2.00 Updated the Ordering Information table on page 2. Added Revision History and About Intersil sections. Replaced all Package Outline drawings with the most recent versions.

X5328, X5329 FN8132 Rev 3.00 Page 18 of 18 Nov 11, 2021 Package Outline Drawing For the most recent package outline drawing, see M8.15E. M8.15E

8 Lead Narrow Body Small Outline Plastic Package

Rev 0, 08/09 Unless otherwise specified, tolerance : Decimal ± 0.05 The pin #1 identifier may be either a mold or mark feature. Interlead flash or protrusions shall not exceed 0.25mm per side. Dimension does not include interlead flash or protrusions. Dimensions in ( ) for Reference Only. Dimensioning and tolerancing conform to AMSE Y14.5m-1994. Dimensions are in millimeters.1. NOTES: DETAIL "A" SIDE VIEW “A TYPICAL RECOMMENDED LAND PATTERN TOP VIEW A B

0.25 AMC B

C 0.10 C ID MARK PIN NO.1 (0.35) x 45° SEATING PLANE GAUGE PLANE 0.25 (5.40) (1.50) 4.90 ± 0.10 3.90 ± 0.10 1.27 0.43 ± 0.076 0.63 ±0.23 4° ± 4° DETAIL "A" 0.22 ± 0.03 0.175 ± 0.075 1.45 ± 0.1

1.75 MAX

(1.27) (0.60) 6.0 ± 0.20 Reference to JEDEC MS-012.6. SIDE VIEW “B”

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