X4202S THINKISEMI | Alldatasheet
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Technical content
20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine Pb
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- Low Recovery Loss
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE X4202S using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine. TO-3PF/TO-3PML Internal Configuration Cathode Anode Base Backside Anode © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05 Unit ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values V R Maximum D.C. Reverse Voltage 210 V V M i R titi R V lt W N•m °C /W g Unit μA mA ns ns A ns A V V RRM Maximum Repetitive Reverse Voltage I F(AV) Average Forward Current T C =110°C, Per Diode A T C =110°C, Per Package I F(RMS) RMS Forward Current T C =110°C, Per Diode I FSM Non-Repetitive Surge Forward Current T J =45°C,t=10ms, 50Hz, Sine 100 P D Power Dissipation T J Junction Temperature -55 to +150 T STG Storage Temperature Range -55 to +150 Torque Module-to-Sink Recommended（M3） 1.1 R th(J-C) Junction-to-Case Thermal Resistance, Per Diode 1.5 Weight 5.2
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. V R =220V, T J = 125°C V F Forward Voltage I F =10A 0.9 1.1 I RM Maximum Reverse Leakage Current V R =220V VI F =10A,T J =125°C 0.95 trr Reverse Recovery Time (I F = 1A, di F /dt = -200A/μs, V R = 30V) trr Reverse Recovery Time I F =10A,V R =100V, I RRM Maximum Reverse Recovery Current di F /dt = -200A/μs 2.1 trr Reverse Recovery Time I F = 10A,V R =100V, I RRM Maximum Reverse Recovery Current di F /dt = -200A/μs ,T J =125°C 0.8
© 2006 Thinki Semiconductor Co., Ltd. Figure 7. Diode Reverse Recovery Test Circuit and Waveform