X00602MA STMICROELECTRONICS | Alldatasheet
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SENSITIVE 0.8A SCRs January 2002 - Ed: 5 MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interrupters, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... Symbol Value Unit IT(RMS) 0.8 A VDRM /VRRM 600 V IGT 200 µA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tl = 85°C 0.8 A IT(AV) Average on-state current (180° conduction angle) Tl = 85°C 0.5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C A tp = 10 ms 9 I²tI ²t Value for fusing tp = 10ms Tj = 25°C 0.25 A 2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1 A PG(AV) Average gate power dissipation Tj = 125°C 0.1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 125 - 40 to + 125 °C G A K AGK TO-92
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES PRODUCT SELECTOR
ORDERING INFORMATION
Symbol Test Conditions X00602MA Unit IGT VD = 12 V RL = 140 Ω MIN. 15 µA MAX. 200 µA VGT MAX. 0.8 V VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ Tj = 125°C MIN. 0.2 V VRG IRG = 10 µA MIN. 5V IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA dV/dt VD = 67 % VDRM RGK = 1 kΩ Tj = 125°C MIN. 25 V/µs VTM ITM = 1 A tp = 380 µs Tj = 25°C MAX. 1.35 V Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V R d Dynamic resistance Tj = 125°C MAX. 245 m Ω IDRM IRRM VDRM = VRRM R GK = 1 kΩ Tj = 25°C MAX. 1 µA Tj = 125°C 100 Symbol Parameter Value Unit R th(j-l) Junction to lead (DC) 70 °C/W R th(j-a) Junction to ambient (DC) 150 °C/W Part Number Voltage Sensitivity Package X00602MA 600 V 200 µA TO-92 Part Number Marking Weight Base Quantity Packing mode X00602MA 1AA2 X0602MA 0.2 g 2500 Bulk X00602MA 2AL2 X0602MA 0.2 g 2000 Ammopack X00602MA 5AL2 X0602MA 0.2 g 2000 Tape & reel X 006 02 M A 1AA2 SENSITIVE SCR SERIES CURRENT: 0.8A SENSITIVITY: 02: 200µA VOLTAGE: M: 600V PACKAGE: A: TO-92 Blank PACKING MODE: 1AA2: Bulk 2AL2: Ammopack 5AL2: Tape & reel
Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus lead temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 P(W) a = 180° IT(av)(A) 360° a 0 25 50 75 100 1250.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 IT(av)(A) D.C. a = 180° Tlead(°C) 0 25 50 75 100 1250.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT(av)(A) a = 180° D.C. Tamb( °C) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01 0.10 1.00 K = [Zth(j-a)/Rth(j-a)] tp(s) -40 -20 0 20 40 60 80 100 120 1400.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] IH & IL IGT Tj(°C) IH[Rgk]/IH[Rgk=1k ]Ω Rgk(k )Ω 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1E-2 1E-1 1E+0 1E+1 1E+2
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. Fig. 10: On-state characteristics (maximum values). dV/dt[Rgk]/dV/dt[Rgk=1k ]Ω 1E-2 1E+2 1E+1 1E+0 1E-1 1E-2 1E-1 1E+0 1E+1 Rgk(k )Ω dV/dt[Cgk]/dV/dt[Rgk=1k ]Ω Cgk(nF) 12 5 10 amb=25°C 1 10 100 1000 ITSM(A) Nonrepetitiv e Tjinitial=25°C Repetitiv e T Number of cycles Onecycle tp=10ms 1.0 10.0 100.0 ITSM(A),I2t(A2s) Tj initial = 25 °CITSM I2t tp(ms) 1E-1 1E+0 1E+1 ITM(A) Tj max.: Vto = 0.85V Rd = 245mΩ Tj = Tjmax. Tj = 25°C VTM(V)
TO-92 (Plastic) DF a E B A C REF. DIMENSIONS Millimeters Inches A 1.35 0.053 B 4.70 0.185 C 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.50 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com