WT062 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc ProductSpecification isc Website：www.iscsemi.cn 1 isc & iscsemi isregisteredtrademark isc SiliconPNPDarlingtonPowerTransistor WT062
DESCRIPTION
- HighDCCurrentGain- :hFE=1000(Min)@IC=-5A
- Collector-EmitterSustaining Voltage- :VCEO(SUS)=-100V(Min)
APPLICATIONS
- Designed forgeneralpurpose amplifierandlow frequencyswitchingapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -100 V VCEO Collector-EmitterVoltage -100 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -10 A ICM CollectorCurrent-Peak -15 A IB BaseCurrent-Continuous -0.5 A PC CollectorPower Dissipation @TC=25℃ 125 W Tj JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.0 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 35.7 ℃/W
INCHANGE Semiconductor isc ProductSpecification isc Website：www.iscsemi.cn 2 isc & iscsemi isregisteredtrademark isc SiliconPNPDarlingtonPowerTransistor WT062 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=-30mA,IB=0 -100 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=-5A,IB=-10mA -2.0 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=-10A,IB=-40mA -3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=-10A,IB=-40mA -3.5 V VBE(on) Base-EmitterOnVoltage IC=-10A;VCE=-4V -3.0 V ICBO CollectorCutoffcurrent VCB=-100V,IE=0 -0.1 mA ICEO CollectorCutoffcurrent VCE=-50V,IB=0 -0.2 mA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -3 mA hFE-1 DCCurrentGain IC=-5A;VCE=-4V 1000 hFE-2 DCCurrentGain IC=-10A;VCE=-4V 500 SwitchingTimes td DelayTime VCC=-30V,IC=-5.0A, IB =-20mA; DutyCycle≤20% IB1 =IB2, RC &RB Varied, TJ =25℃ 0.15 μs tr RiseTime 0.55 μs tstg StorageTime 2.5 μs tf FallTime 2.5 μs