WPS512K8 ETC1 | Alldatasheet

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774] [Wate MICROELECTRONICS WPS512K8X-XRJX 512Kx8 SRAM so pxcuinanary- PLASTIC PLUS™ FEATURES @ Access Timas of 15, 20, Zins PIN CONFIGURATION @ Standard Commercial Otf-The-Shelf {COTS} Memory TOP VIEW Devices for Extended Temperature Range wCfo 7 »bne @ JEDEC Standard 36 pin Plastic SOJ Package ace asate @ Electrical and Speed Characteristics for cle s a © Military Temperature {-55°C to +125°C} aeCs 32[Jats it . ate bl © Industrial Temperature {-4D°C to +85°C| woo] sx vor @ 8um-in and Temperature Cycling Available wo Ce 20} w08 vee 28 vee @ Organized as 512K xB wes C] 10 bid ad @ Center Power/Ground Pins (Revolutionary) noe = a ed @ 5 Volt Power Supply WE 3 MDaw ® Low Power {"L"} Version Available asC}14 asf Dats Asis aaa @ Battery Back-Up Operation viet 2ifan a a nec oat ® Reliability Test Data Available: aa |ie ld High Temperatura Operating Life & High Temperatura Storage © Pressure Cooker Test n” PIN DESCRIPTION © Wet High Temperature Operating Life ro] eee v Thermal Sock = a «Temper eg | SCS Chip Select * This data seat describes a product under devnlopucut, wat fly a chen an a ange wo et. p WE Write Enatle ee | ee ec | Aen 1 ‘Weee Misroslectrarses + Praene, A? «(QL 437-1820

ABSOLUTE MAXIMUM RATINGS TRUTH TABLE Operating Temperature (Mil) | H# | x [x [Power Down | High-z [ise Operating Temperature (Ind) Pt fw [a [out disable [High-z [tee Storage Temperature [tse | | +i50_| c | a cs Signal VolageRolaivetoves | ve | 05 | Vervos | v| ‘1+ _1_X 1 itis CAPACITANCE RECOMMENDED OPERATING CONDITIONS (Ta = 425°C) Supply Votage Vin=Ov.f=1.0wHz [6 | pF | it High Vola vor=onF=rawis |e Lar | Input Low Voltage [vm | os [| 8 |v | This parameter is guaranteed by design but not tested. Operating Temperature (wil) ta | 55 | +15 | °c | Operating Temperature (ind)| Ta | 40 | +85 | °c | DC CHARACTERISTICS (Vcc = SV, Vss = OV, TA = -55°C to +125°C) | Input Leakage Gurrent | tus | Woo = 5.5, Vin = Vs to Veo ee ee ee) Output Leakage Current [to [| S=Vin,OE= Vin, Vour=Vestovec | || 10S || aA GS-VuTE-vnnt=smiever-65 [| 10 ma Standby Current [ise | CS=Vm.OE=-Vin t= Suz, Voo-55 | | 5 | sma To = 8.0mA, Vor = 4.5 ee ee Output High Votage [vor [ion=-4omaver-45 Tea TV NOTE: DC test conditions: Vi. = 0.3V, Vik = Vec -0.3V DATA RETENTION CHARACTERISTICS (Ta= -55°C to +125°C} [rermer —| semnt | comttom np ue ve Min Typ Max | DataRetenton Supply Votage | von [| Szvec-oav | 20 TT ss |v | Data Retention Current | tecoms_ [| veo=av | | tos Tw [iow PverbnaRewnionty) [eon | ves | | s0 | oo | m _]

iW] WHITE MICROELECTRONICS WPS512K8X-XRUX AC CHARACTERISTICS (Vec=5.0V, Vss = OV, TA=-55°C to +125°C) oe Read Cycle Min Max | Readcycetine | Stee | tS] S| oo || ts S| [nates ewes ine ie Lous hata Assos Giage [Te Leh Sees Acmecting [Tacs Pe ps Lous trabeic Oupavais [eee oe Lets Sams Ospdintw? [Tee [eT Lous trasete Oupaintow? [Tee [0 Leh Deas bospuintign? [ee Pe Loui eset Ouputintign? [oe [7 Pe oe] *15ns not available in the lower power option. 4. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (Vec= 5.0V, Ta= -55°C to +125°C) Parameter 15° 20 225 Write Cycle Min Max Min Max Min Max [iis poe pee a [ote Sees obniatwe [ew ep [ndccss vaio Ens of wie [ww [re [Je [te Pos [oes vaio ensatwie [ww [8 [J » [|e Ps [wae pase wan | we Pee [pases Stuptine se [nase Tine [ef 0 oe [oust Acne ron xa owite [tow [0 oe [Wit enaioto Out intight@ [wie [| @ [| || | 1s] a *15ns not available in the lower power option. 1. This parameter is guaranteed by design but not tested. AC TEST CIRCUIT AC TEST CONDITIONS to. [Parameter | STP cr a ee a Cy =50 pt (®rpolar Supply) NOTES: Vz is programmable from -2V to 47V. a lo & lox programmable from 0 to 16mA. Tester Impedance Zo = 75 Q. j Vz is typically the midpoint of Vow and Vo a | oH Jo. & loxare adjusted to simulate a typical resistive load circuit, ‘Current Source ATE tester includes jig capacitance.

3 White Microelectronics * Phoenix, AZ * (602) 437-1520

774] [WaT MICROELECTRONICS WPS512K8X-XRUX TIMING WAVEFORM - READ CYCLE tre sooness S$ ta

5 We LIE

‘a rep be tor oaravo PRIUS ATA LID ox DATA VO ee READ CYCLE 1 (G8 «GE = Vu, WE = Vin) READ CYCLE 2 (WE = Vin) WRITE CYCLE - WE CONTROLLED twe _ ‘ADDRESS < _ tw tC = tas we we AN tow twuz, tow. ton WRITE CYCLE 1, WE CONTROLLED WRITE CYCLE - CS CONTROLLED we rooness EE tay bs ew ta f_ we tow ton WRITE CYCLE 2, CS CONTROLLED ‘White Microelectronics * Phoenix, AZ * (602) 437-1520 4

23.37 (0.920) nooo gle aie 10.03 (0.395) slo sjs 1029 (0.405) z\\g als DOU OOOO 0,86 (0.026) a A [760.148 wax [ZT 2.008 max] Ps a eg + 10.53 (0.021) DIMENSIONS IN MILLIMETERS AND (INCHES)

ORDERING INFORMATION

L SPECIAL PROCESS: Blank = CMOS B = BICMOS DEVICE GRADE: M = Miltary Temperature -85°C to +125°C | = Industrial Temperature -40°C to +85°C PACKAGE: RJ = Revolutionary SOJ ACCESS TIME (ns) IMPROVEMENT MARK B = Burnin T = Temperature Cycling © = Burn-in and Temperature Cycle Blank = Standard Power L= Low Power ORGANIZATION, 512K x 8 SRAM PLASTIC PLUS™ WHITE MICROELECTRONICS 5 ‘White Microslectronies + Phoonix, AZ (602) 437-1520