WPM2015 KEXIN | Alldatasheet

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www.kexin.com.cn 1 MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Features

  • VDS (V) =-20V
  • ID =-2.4 A
  • RDS(ON) ＜ 110mΩ (VGS =-4.5V)
  • RDS(ON) ＜ 150mΩ (VGS =-2.5V)
  • Supper high density cell design 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Symbol 10 S Steady State Unit VDS VGS Ta=25°C -2.4 -2.2 Ta=70°C -1.9 -1.7 Ta=25°C 0.9 0.8 Ta=70°C 0.5 0.5 Ta=25°C -2.2 -2 Ta=70°C -1.7 -1.6 Ta=25°C 0.7 0.6 Ta=70°C 0.5 0.4 IDM A (Note.1) 135 155 (Note.2) 160 190 RthJC __ 75 TJ TL Tstg Note.1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper Note.2: Surface mounted on FR-4 board using minimum pad size, 1oz copper Note.3: Pulse width<380μs, Duty Cycle<2% Junction Storage Temperature Range Thermal Resistance.Junction- to-Case 150 260 -55 to 150 Thermal Resistance.Junction- to-Ambient RthJA Pulsed Drain Current (Note.3) -10 Junction Temperature Lead Temperature Continuous Drain Current (Note.2) ID A Power Dissipation (Note.2) PD W Continuous Drain Current (Note.1) ID Power Dissipation (Note.1) PD Parameter -20 Drain-Source Voltage Gate-Source Voltage V ℃/W A W D G S 1 2

www.kexin.com.cn2 MOSF ET P-Channel MOSFET WPM2015 (KPM2015) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -20 V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±8V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250μA -0.4 -0.81 V VGS=-4.5V, ID=-2.7A 110 VGS=-2.5V, ID=-2.2A 150 Input Capacitance Ciss 534 Output Capacitance Coss 62 Reverse Transfer Capacitance Crss 54 Total Gate Charge Qg 7.3 Threshold Gate Charge Qg(th) 0.5 Gate Source Charge Qgs 1.25 Gate Drain Charge Qgd 1.15 Turn-On DelayTime td(on) 8 Turn-On Rise Time tr 6.4 Turn-Off DelayTime td(off) 41 Turn-Off Fall Time tf 7 Maximum Body-Diode Continuous Current IS -0.9 A Diode Forward Voltage VSD IS=-0.9A,VGS=0V -1.5 V pF nC ns mΩ VGS=-4.5V, VDS=-10V, ID=-1.2A, RG=6Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2.7A ■ Marking Marking A1SHB

www.kexin.com.cn 3 MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Typical Characterisitics Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature VDS=-5V T=125 o C T=25 o C T=-50 o C -IDS-Drain Source Current(A) -VGS-Gate to Source Voltage(V) VGS=-2.5V VGS=-1.5V VGS=-3V VGS=-4VVGS=-4.5V -IDS-Drain to Source Current(A) -VDS-Drain to Source Voltage(V) 1 2 3 4 5 100 120 140 160 VGS=-2.5V VGS=-4.5V VGS=-1.8V -RDS(ON)-On Resistance(m ) -IDS-Drain to Source Current(A) 120 160 200 240 280 ID=-2.7A RDS(ON)-Reistance(m ) -VGS-Gate to Source Voltage(V) -50 0 50 100 150 100 120 140 -50 0 VGS=-4.5V,ID=-2.7A RDS(ON)-On Resistance(m ) Temperature( o 50 100 150 0.2 0.4 0.6 0.8 1.0 ID=-250uA -VGS(th)-Gate Threshold Voltage(V) Temperature( o

www.kexin.com.cn4 MOSF ET P-Channel MOSFET WPM2015 (KPM2015) ■ Typical Characterisitics Capacitance Single pulse power Body diode forward voltage Safe operating power Gate Charge Characteristics 0 2 4 6 8 10 100 200 300 400 500 600 700 800 F=1MHZ Crss Coss Ciss C-Capacitance(pF) -VDS-Drain to Source Voltage(V) T=25 o C T=125 o C -ISD-Source to Drain Current(A) -VSD-Source to Drain Voltage(V) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID=-2.7A -VGS-Gate to Source Voltage Qg (nc) 0.01 0.1 1 10 100 1000 Time (s) Power (W) TA = 25 °C V DS - Drain-to-SourceVoltage (V) - Drain Current (A)ID 0.1 0.1 1 10 TA = 25 °C Single Pulse 1 ms 10 ms 100 ms 0.01 DC BVDSS Limited 100 Limitedby RDS(on) 1 s 10 s 100 µs

www.kexin.com.cn 5 MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Typical Characterisitics Transient thermal response (Junction-to-Ambient) 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Duty Cycle = 0.5 Single Pulse 0.02 0.05 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 1 2 0 ° C / W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted