WPM2005B KEXIN | Alldatasheet

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www.kexin.com.cn 1 MOSFE T P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) ■ Features

  • VDS (V) =-20V
  • ID =-2.7 A (VGS =-10V)
  • RDS(ON) ＜ 125mΩ (VGS =-4.5V)
  • RDS(ON) ＜ 160mΩ (VGS =-2.5V)
  • Ultra Low VF Schottky DFN3X2-8L 0.35 (max) 0.24 (min)

0.65 BSC

0.80 ± 0.1 0.25 (max) 0.08 (min) 0.05 (max)

2.00 BSC

1.70 BSC

3.00 BSC

0.40 (max) 0.20 (min) 0.10 (max) Unit:mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol MOSFET Schottky Unit Drain-Source Voltage VDS -20 - Gate-Source Voltage VGS ±8 - Peak Repetitive Reverse Voltage VRRM - 20 DC Blocking Voltage VR - 20 Continuous Drain Current ID -2.7 - Pulsed Drain Current IDM -10 - Average Rectified Forward Current IF - 1 Power Dissipation PD 1.1 - W Thermal Resistance.Junction- to-Ambient RthJA 110 - ℃/W Junction Temperature TJ Junction Storage Temperature Range Tstg V A 150 -55 to 150 C C D D A A S G

www.kexin.com.cn2 MOSFE T P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -20 V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±8V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250μA -0.45 -0.81 V VGS=-4.5V, ID=-2.7A 125 VGS=-2.5V, ID=-2.2A 160 Forward Transconductance gFS VDS=-10V, ID=-2.7A 7 S Input Capacitance Ciss 300 Output Capacitance Coss 150 Reverse Transfer Capacitance Crss 50 Total Gate Charge Qg(TOT) 3 6.5 Threshold Gate Charge Qg(TH) 0.2 Gate Source Charge Qgs 1.4 Gate Drain Charge Qgd 0.7 Turn-On DelayTime td(on) 25 Turn-On Rise Time tr 45 Turn-Off DelayTime td(off) 45 Turn-Off Fall Time tf 40 IF=0.1A 0.425 IF=0.5A 0.48 IF=1A 0.575 VR=10V 20 VR=20V 100 Diode Forward Voltage VSD IS=-0.9A,VGS=0V -1.5 V mΩ VGS = -4.5V, VDD = -10V, ID = -1A, RG=6Ω, RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2.7A pF nC VVF ns Forward voltage Reverse current IR uA

www.kexin.com.cn 3 MOSF ET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) ■ Typical Characterisitics V GS = 5 thru 3V TC = --55。C 125 C 25 C scitsiretcarahCrefsnarTscitsiretcarahCtuptuO VDS -- Drain-to-Source Voltage (V) -- Drain Current (A)I D VGS -- Gate-to-Source Voltage (V) -- Drain Current (A)I D 1.5 V 2 V 2.5 V -- On-Resistance (rDS(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 --50 --25 0 25 50 75 100 125 150 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 VDS -- Drain-to-Source Voltage (V) C rss C oss C iss V DS = 10 V ID = 2.7 A ID -- Drain Current (A) V GS = 4.5 V ID = 2.7 A V GS = 2.5 V V GS = 4.5 V Gate Charge On-Resistance vs. Drain Current -- Gate-to-Source Voltage (V) Qg -- Total Gate Charge (nC) C -- Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature TJ -- Junction Temperature (bC) (Normalized) -- On-Resistance (rDS(on) ) V GS = 1.8 V 200 400 600 800 0 4 8 12 16 20

www.kexin.com.cn4 MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) ■ Typical Characterisitics 0.0 0.1 0.2 0.3 0.4 0 1 2 3 4 5 TJ = 150。C ID = 2.7 A egatloVecruoS-ot-etaG.svecnatsiseR-nOegatloVdrawroFedoiDniarD-ecruoS -- On-Resistance (rDS(on) ) VSD V)V(egatloVniarD-ot-ecruoS-- GS -- Gate-to-Source Voltage (V) -- Source Current (A)I S TJ = 25 C Power (W) Single Pulse Power Time (sec) 1 100 6001010--110--210--4 10--3 10--3 10--2 00601110--110--4 100 --0.2 --0.1 0.0 0.1 0.2 0.3 0.4 --50 --25 0 25 50 75 100 125 150 ID = 250 mA 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage Variance (V)VGS(th) TJ -- Temperature ( C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 90 C/W 3. TJM -- TA= P DM ZthJA(t) Notes: 4. Surface Mounted P DM b b

www.kexin.com.cn 5 MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) ■ Typical Characterisitics 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance -- Junction Capacitance (pF) 0.8 1.0 0.1 Forward Voltage Drop VF -- Forward Voltage Drop (V) -- Forward Current (A)I F 0 0.2 0.4 TJ = 150 。C Capacitance 120 150 0 4 8 12 16 20 VKA -- Reverse Voltage (V 125 150 0.0001 Reverse Current vs. Junction Temperature TJ -- Junction Temperature (bC) -- Reverse Current (mA)I R 0 25 50 75 100 CT 10 V 0.001 0.01 0.1 20 V 0.6 TJ = 25。C