WPH4003

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Document overview

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Technical content

Features

• ON-resistance RDS (on) =8.2 Ω (typ.) • 10V drive
• Input Capacitance Ciss=850pF (typ.) Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 1700 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only maximum temperature Tch=150 °C3 A IDpack*2 Tc=25 °C (Our ideal heat dissipation condition) *3 2.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 6 A Allowable Power Dissipation P D 3.0 W Tc=25°C5 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 49 mJ Avalanche Current *5 I AV 3A Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator mad e of aluminium. *4 VDD=50V , L=10mH, IAV=3A (Fig.1) *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7538A-002 Product & Package Information
• Package : TO-3PF-3L
• JEITA, JEDEC : SC-96
• Minimum Packing Quantity : 30 pcs./magazine Marking Electrical Connection PH4003 LOT No. 1 : Gate 2 : Drain 3 : Source TO-3PF-3L 15.5 5.5 3.0 0.90.75 3.6 2.0 2.0 4.0 123 3.5 5.0 2.0 4.53.3 10.0 25.0 24.519.3 5.45 5.45 2.0 WPH4003-1E

No. A1967-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 1700 V Zero-Gate Voltage Drain Current I DSS V DS=1360V, VGS=0V 1m A Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 24 V Forward Transfer Admittance | yfs | VDS=20V, ID=1.5A 1.2 2.4 S Static Drain-to-Source On-State Resistance RDS(on) I D=1.5A, VGS=10V 8.2 10.5 Ω Input Capacitance Ciss VDS=30V, f=1MHz 850 pF Output Capacitance Coss 90 pF Reverse Transfer Capacitance Crss 27 pF Turn-ON Delay Time td(on) See Fig.2 19 ns Rise Time tr 21 ns Turn-OFF Delay Time td(off) 200 ns Fall Time tf 55 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=3A 48 nC Gate-to-Source Charge Qgs 6n C Gate-to-Drain “Miller” Charge Qgd 22 nC Diode Forward Voltage VSD IS=3A, VGS=0V 0.8 1.5 V Reverse Recovery Time trr See Fig.3 IS=3A, VGS=0V, di/dt=100A/μs 410 ns Reverse Recovery Charge Qrr 3000 nC Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit

Ordering Information

Device Package Shipping memo WPH4003-1E TO-3PF-3L 30pcs./magazine Pb Free 50Ω ≥50Ω RG VDD L 10V WPH4003 G S D P. G 50Ω G S D ID=1.5A RL=125Ω VDD=200V VOUT WPH4003 VIN PW≤10μs D.C.≤1% 10V VIN VDD=50V WPH4003 500μH Driver MOSFET G S D

No. A1967-3/7 Drain to Source V oltage, VDS -- V Drain Current, ID -- A Gate to Source V oltage, VGS -- V Drain Current, ID -- A ID -- VDS ID -- VGS IT16973 IT16974 504010 30 20 45 3552 5 15 1426 4 8 10 12 VGS=4V 10V --25°C 25°C Tc= 75°C Tc=25°C VDS=20V Static Drain to Source On State Resistance, RDS(on) -- Ω Static Drain to Source On State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Forward Drain to Source V oltage, VSD -- V Forward Drain Current, IS -- A Gate to Source V oltage, VGS -- V RDS(on) -- VGS RDS(on) -- Tc IS -- VSD IT16975 IT16963 --50 --25 0 25 50 75 100 125 150 0.0 25.0 10.0 20.0 15.0 5.0 IT16965 0.01 0.1 1.0 --25 Tc=75 Single pulse VGS=0V VGS =10V , I D=1.5A 10986547 Single pulse ID=1.5A 75°C 25°C Tc= --25°C Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V Qg -- VGS IT16967 603020 40 5010 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S | yfs | -- ID IT16964 0.10.01 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 1.0 0.1 VDS=20V 25°C Tc= --25 75°C Single pulse Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT16966 f=1MHz Ciss Coss Crss 100 1000 503051 5 2 0 2 5 3 5 4 0 4 510 10000 VDS=200V ID=3A

No. A1967-4/7 Ambient Temperature, Ta -- °C Avalanche Energy Derating Factor -- % Drain to Source V oltage, VDS -- V Drain Current, ID -- A A S O EAS -- Ta IT16969 IT16972 100 175 120 50 100 15025 75 125 1.0 10.0 0.1 0.01 23 5 7 23 5 7 23 5 7 23 571.0 1 100 10 1000 Operation in this area is limited by RDS(on). μs100 μs 10ms 1ms 100ms IDc(*1)=3A IDpack(*2)=2.5A IDP=6A(PW≤10μs) DC operation Tc=25°C Single pulse Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W PD -- Ta PD -- Tc IT16970 IT16971 20 40 0.5 1.0 2.0 1.5 80 100 120 3.0 2.5 3.5 140 160 0 20 40 80 100 120 140 160 Drain Current, ID -- A Switching Time, S/W Time -- ns S/W Time -- ID IT16968 VDD=200V VGS=10V td(off) tf trtd(on) 100 0.1 1.0 23 5 23 5 7 23 5 *1. Shows chip capability *2. Our ideal heat dissipation condition

No. A1967-5/7 Magazine Specifi cation WPH4003-1E

No. A1967-6/7 Outline Drawing WPH4003-1E Mass (g) Unit 5.5 * For reference mm

PS No. A1967-7/7 Note on usage : Since the WPH4003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.