WPH4003-1E ISC | Alldatasheet
Document overview
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Technical content
www.iscsemi.com 1 iscN-ChannelMOSFETTransistor WPH4003-1E
FEATURES
- DrainCurrent:ID=3A@TC=25℃
- DrainSource Voltage :VDSS=1700V(Min)
- StaticDrain-Source On-Resistance :RDS(on)=10.5Ω(Max)@ VGS=10V
DESCRIPTION
- motordrive,
- DC-DCconverter,
- powerswitch andsolenoiddrive. ABSOLUTE MAXIMUM RATINGS(TC=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1700 V VGS Gate-SourceVoltage-Continuous ±30 V ID DrainCurrent-Continuous 3 A IDM DrainCurrent-SinglePluse 12 A PD TotalDissipation@TC=25℃ 83 W TJ Max.OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.5 ℃/W
www.iscsemi.com 2 iscN-ChannelMOSFETTransistor WPH4003-1E ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwise specified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=10mA 1700 -- V VGS(th) GateThresholdVoltage VDS=10V;ID=1mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=1.5A -- 10.5 Ω IGSS Gate-BodyLeakageCurrent VGS= ±30V;VDS=0 -- ±100 nA IDSS ZeroGateVoltageDrainCurrent VDS=600V;VGS=0 -- 10 uA VSD ForwardOn-Voltage IS=47A;VGS=0 -- 1.4 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.