WPC ETC2 | Alldatasheet

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Technical content

Data Sheet DS00109 / June 2010 Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements . While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of such Information. All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request . Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ Tel: +44 1752 693000 Fax: +44 1752 693200 Web: www.plesseysemiconductors.com WPC Bipolar Process Data Sheet DS00109 / June 2010 Key parameters (minimum geometry device) NPN fT 7 GHz at Ic=0.4 mA, Vce=2V CJC 10 fF CJE 14fF Bvceo 6V Propagation Delay 125 ps

Applications

  • Low current circuits
  • Synthesizers
  • Pagers Key Process Feature
  • 1.8nF/sq μm MIS capacitors
  • High value polysilicon resistor
  • Very low leakage currents
  • Low flicker noise npn cross section Epitaxy (n-) BN Substrate (p-) DC Collector LOCOS BP IS LOCOS BaseEmitter IS BP Minimum geometry npn fT curve 0.0 2.0 4.0 6.0 8.0 IC (A) fT (GHz) Vce=2V npn parameters (1.5 x 1.5 um emitter) parameter Condition Value Units fT Ic=0.3mA Vce=2V 7 GHz HFE Ic=10μA Vce=2V 100 VAF 30 V BVCEO Ic=1μA >13.5 V BVCBO Ic=5μA >6 V CJE Vbe=0 14 fF CJC Vbc=0 10 fF CJS Vcs=0 17 fF Lateral pnp parameters parameter Condition Value Units fT Vce=2V 100 MHz HFE Ic=10μA Vcb=0V 60 VAF 17 V BVCEO Ic=1μA >6 V Resistor Values parameter Value Units Poly 3.2 ± 0.5 k Ω Base 550 ± 50 Ω PR 67.5 ± 7.5 Ω Design Rules Feature Min μm Spacing μm Emitter 1.0 x 2.5 or 1.5 x 1.5 Poly (EP) resistor 1.5 2.0 Base and PR resistor 3.0 1.5 Contact 1.0 x 2.5 or 1.5 x 1.5 1st Layer metal 2.0 2.0 2nd layer metal 2.0 2.0 WPC is a versatile RF bipolar process providing excellent RF functionality at low cost. Features such as high value poly resistors, nitride capacitors and two layer metal allow low current circuits to be built with high packing densities,