WPB4001 ISC | Alldatasheet
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Technical content
iscN-ChannelMOSFETTransistor WPB4001 www.iscsemi.com 1
FEATURES
- DrainCurrent-ID=26A@TC=25℃
- DrainSource Voltage-VDSS=500V(Min)
- Static Drain-Source On-Resistance -RDS(on) =0.26Ω(Max)@VGS=10V
DESCRIPTION
- SMPS
- DC–DCConverters
- HighPowerLighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGS Gate-SourceVoltage-Continuous ±30 V ID DrainCurrent-Continuous 26 A IDM DrainCurrent-Peak 90 A PD TotalDissipation 80 W TJ Max. Operating JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.56 ℃/W
iscN-ChannelMOSFETTransistor WPB4001 www.iscsemi.com 2 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=10mA 500 -- V IDSS ZeroGateVoltageDrainCurrent VDS=400V;VGS=0V -- 100 uA IGSS Gate-BodyLeakageCurrent VGS= ±30V;VDS=0V -- ±100 nA VGS(th) GateThresholdVoltage VDS=10V;ID=1mA 3.0 5.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=13A -- 0.26 Ω VSD ForwardOn-Voltage IS=26A;VGS=0V -- 1.5 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.