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Technical content

Features

  • ON-resistance R DS(on)=0.2Ω (typ.)
  • Input capacitance Ciss=2250pF (typ.)
  • 10V Drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS 500 V Gate to Source Voltage V GSS ±30 V Drain Current (DC) I D 26 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 90 A Source to Drain Diode Forward Current (DC) ISD 26 A Source to Drain Diode Forward Current (Pulse) ISDP PW≤10μs, duty cycle≤1% 90 A Allowable Power Dissipation P D 2.5 W Tc=25°C 220 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 543 mJ Avalanche Current *2 IAV 14 A Note : *1 VDD=50V , L=5mH, IAV=14A (Fig.1) *2 L≤5mH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 500 V Zero-Gate Voltage Drain Current I DSS V DS=400V, VGS=0V 100 μA Gate to Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=13A 7.5 15.5 S Static Drain to Source On-State Resistance RDS(on) I D=13A, VGS=10V 0.20 0.26 Ω Input Capacitance Ciss VDS=30V, f=1MHz 2250 pF Output Capacitance Coss 450 pF Reverse Transfer Capacitance Crss 90 pF Turn-ON Delay Time td(on) See Fig.2 44 ns Rise Time tr 156 ns Turn-OFF Delay Time td(off) 224 ns Fall Time tf 94 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=26A 87 nC Gate to Source Charge Qgs 15.2 nC Gate to Drain “Miller” Charge Qgd 50 nC Diode Forward Voltage VSD IS=26A, VGS=0V 1.1 1.5 V Reverse Recovery Time trr See Fig.3 ISD=26A, VGS=0V, di/dt=100A/μs 115 ns Reverse Recovery Charge Qrr 340 nC

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of this data sheet. TO-3P-3L

No. A2212-2/5 Drain to Source V oltage, VDS -- V Drain Current, ID -- A Gate to Source V oltage, VGS -- V Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate to Source V oltage, VGS -- V ID -- VDS ID -- VGS(off) RDS(on) -- TcRDS(on) -- VGS IS -- VSD| yfs | -- ID Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A Switching Time, SW Time -- ns Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT17181 IT17182 IT17183 IT17184 --50 --25 0 25 50 75 100 125 150 10 3052 5 2015 01 6 41 221 0 68 1 4 15V10V 0.6 0.5 0.4 0.3 0.2 0.1 Tc=25°C VDS=20V VGS=6V IT17186 0.01 0.1 1.0 IT17250 --25 Tc=75 0.1 1.023 5 7 23 5 757 10 23 5 7 100 1.0 VDS=10V Tc= --25 75°C Tc= --25°C 25°C 75°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 109768 Tc=75°C 25°C --25°C VGS =10V , I D=13A 25°C IT17187 100 0.1 1.0 1023 5 7 2 3 235 57 VDD=200V VGS=10V td(off) tr tf td(on) 100 10K 5010 30 40 20 4552 5 3 5 15 IT17188 f=1MHz Ciss Coss Crss SW Time -- ID ID=13A Single pulse Single pulse VGS=0V Single pulse

No. A2212-3/5 Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V VGS -- Qg A S O PD -- Tc Drain to Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W IT17193 20 40 60 80 100 120 3.0 2.5 140 160 2.0 1.5 1.0 0.5 IT17191 IT17190 0.1 1.0 10μs 100ms 10ms 1ms DC operation 10 100 1K2 3 57 2 3 57 2 3 57 100 Operation in this area is limited by RDS(on). IDP=90A (PW≤10μs) IT17192 20 40 60 80 100 140 120 250 200 220 150 100 160 IT17251 40 8020 60 30 7010 50 VDS=200V ID=26A 100 μsID=26A Tc=25°C Single pulse

No. A2212-4/5 Package Dimensions WPB4001-1E TO-3P-3L CASE 340AF ISSUE O Unit : mm 1: Gate 2: Drain 3: Source Ordering & Package Information Marking Electrical Connection Device Package Shipping memo WPB4001-1E TO-3P-3L SC-65, SOT-199, TO-247 pcs./tube Pb-Free PB4001 LOT No.

PS No. A2212-5/5 Note on usage : Since the WPB4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Resistance Test Circuit 50Ω ≥50Ω RG VDD L 10V WPB4001 G S D P. G 50Ω G S D ID=13A RL=15.1Ω VDD=200V VOUT WPB4001 VIN PW=10μs D.C.≤1% 10V VIN VDD=50V WPB4001 500μH Driver MOSFET G S D