WP3080KA WANSEMI | Alldatasheet
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Technical content
Enhancement Mode N-Channel Power MOSFET TO-252/NMOS/30V/±20V/1.6V/80A/4.5mΩ Rev0.9
Rev.0.9 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 1 30V, 4.5mΩ, 80A, Single N-Channel 1.Features ◆ 30V MOSFET technology ◆ Low on-state resistance ◆ Fast switching ◆ Vgs±20V 2.Applications ◆ Power Switching Application ◆ Load Switching TO-252 Pin Description VDS RDS(on) Typ. ID Max. 30V 4.5mΩ @ 10V 80A 7.8mΩ @ 4.5V Schematic Diagram 3.Package Marking and Ordering Information 4.Absolute Max Ratings at Ta=25℃ (Note1) Parameter Symbol Maximum Units Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 80 A Drain Current (Pulse), PW≤300μs IDP 280 A Total Dissipation PD 50 W Avalanche Energy, Single Pulsed EAS 110 mJ Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to +150 ℃ Note 1: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Part no. Marking Package PCS/Reel PCS/CTN. WP3080KA WP3080KA TO-252 2,500 25,000 D G S
Rev.0.9 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 2 5.Thermal Resistance Ratings Parameter Symbol Value Unit Junction to case RθJC 2.5 ℃/W Note 2：When mounted on 1 inch square copper board t ≤ 10sec The value in any given application depends on the user's specific board design. 6.Electrical Characteristics at Ta=25℃ (Note 3) Parameter Symbol Test Conditions Min. Typ. Max. Units Drain to Source Breakdown Voltage V(BR)DSS ID = 250μA, VGS = 0V 30 - - V Zero-Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V - - 1 μA Gate to Source Leakage Current IGSS1 VGS = ±20V, VSS = 0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1.2 1.6 2.5 V Static Drain to Source On-State Resistance RDS(on) ID = 30A, VGS = 10V - 4.5 6 mΩ ID = 20A, VGS = 4.5V - 7.8 12 mΩ Input Capacitance Ciss VGS=0V, VDS=15V, Frequency=1.0MHz 2581 pF Output Capacitance Coss 993 pF Reverse Transfer Capacitance Crss 778 pF Turn-ON Delay Time td(on) VDS= 15V, ID = 30A, VGS = 10V, RG = 3Ω 7 ns Rise Time tr 14 ns Turn-OFF Delay Time td(off) 34 ns Fall Time tf 11 ns Total Gate Charge Qg VDS = 15V, VGS = 10V, ID = 30A 34 nC Qgs 6.5 nC Qgd 7.5 nC Diode Forward Voltage VFSD IS = 30A, VGS = 0 0.4 0.89 1.2 V Note 3 ：Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Rev.0.9 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 3 7.Typical electrical and thermal characteristics Output Characteristics Typical Transfer Characteristics On-resistance vs. Drain Current Body Diode Characteristics Gate Charge Characteristics Capacitance Characteristics
Rev.0.9 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 4 Normalized Breakdown Voltage vs. Junction Temperature Normalized on Resistance vs. Junction Temperature Maximum Continuous Drain Current vs. Case Temperature Maximum Safe Operating Area Normalized Maximum Transient Thermal Impedance Peak Current Capacity
Rev.0.9 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 5 8.Package Dimensions
Rev.0.9 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 6 9. Important Notice WAN SEMICONDUCTOR (NINGBO) CO.,LT D reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services and to discontinue any product or service. Buyers should obtain the latest relevant information before placing orders and shou ld verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to WANSEMI’s terms and conditions of sale supplied at the time of order acknowledgment. WANSEMI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in WANSEMI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent WANSEMI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. WANSEMI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using WANSEMI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. No WANSEMI components are authorized for use in FDA Class III (or similar life -critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Unless WANSEMI has specifically designated certain components which meet ISO/TS16949 requirements, mainly for automotive use, WANSEMI will not be responsible for any failure of such components to meet such requirements.