WMBTA42 WINGS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
NPN EPITAXIAL SILICON TRANSISTORS WMBTA42 High Voltage Transistor Die Size 0.6*0.6mm GUARANTEED PROBED CHARACTERISTICS (TA=25 ℃℃ ℃℃) LimitsCharacteristic Symbol Test Conditions Min Typ Max Units Collector-emitter Breakdown Voltage VCEO IC=1.0mA 300 - - V Collector-Base Breakdown Voltage VCBO IC=100uA Collector Cut-off Current ICBO VCB=260V - - 100 nA Emitter Cut-off Current IEBO VEB=6V - - 100 nA DC Current Gain h FE VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA Base-Emitter Saturation Voltage VBEsat IC=20mA, Ib=2mA - - V Collector-Emitter Saturation Voltage VCEsat IC=20mA, IB=2mA - - Transition Frequency fr VCE=20V, IC=10mA,f=10MHz 50 - - MHz Collector-Base Capacitance Ccb VCB=20V, f=1MHz - - 3.0 pF NOTES: Due to probe testing limitations, only the DC parameters are tested. Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com SOT — —23