WMBT3904 WINGS | Alldatasheet
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NPN EPITAXIAL SILICON TRANSISTORS WMBT3904 High Voltage Transistor ! Power Dissipation: 225mW ! Collector Current: Max. 0.2A GUARANTEED PROBED CHARACTERISTICS (TA=25℃℃ ℃℃) LimitsCharacteristic Symbol Test Conditions MIN. MAX. Units Collector-emitter Breakdown Voltage BVCEO IC=1mA 40 V Collector-Base Breakdown Voltage BVCBO IC=100µA 60 V Emitter-Base Breakdown Voltage BVEBO IE=10µA 6.0 V Collector Cut-off Current ICEX VCE=30V, VBE=3V 50 nA hFE1 VCE=1V, IC=100µA 40 hFE2 VCE=1V, IC=1mA 70 hFE3 VCE=1V, IC=10mA 100 300 hFE4 VCE=1V, IC=50mA 60 DC Current Gain hFE5 VCE=1V, IC=100mA 30 BVESAT1 IC=10mA, IB=1mA 650 850 mVBase-Emitter Saturation Voltage BVESAT2 IC=50mA,IB=5mA 950 mV VCE(SAT)1 IC=10mA, IB=1mA 200 mVCollector-Emitter Saturation Voltage VCE(SAT)2 IC=50mA, IB=5mA 200 mV Transition Frequency f T IC=10, VCE=20V f=100MHz 300 MHz Collector-Base Capacitance COB VCB=5V, f=1MHz 4 PF NOTES: Due to probe testing limitations, only the DC parameters are tested. SOT — —23 Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com