WM1A080120K1 FS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
⚫ High Blocking Voltage with Low On-Resistance ⚫ High Speed Switching with Low Capacitance ⚫ Easy to Parallel and Simple to Drive Benefits ⚫ Higher System Efficiency ⚫ Reduced Cooling Requirements ⚫ Increased Power Density ⚫ Increased System SwitchingFrequency
Applications
⚫ Power Supplies ⚫ High Voltage DC/DC Converters ⚫ Motor Drives ⚫ Switch Mode Power Supplies ⚫ Pulsed Power applications Package Part Number Package WM1A080120K1 TO-247-3 Maximum Ratings (TC=25 C unless otherwise specified) o Symbol Parameter Value Unit Test Conditions Note VDSmax Drain-Source Voltage 1200 V VGS=0V, ID=100μA VGSmax Gate-Source Voltage -10/+25 V Absolute maximum values VGSop Gate-Source Voltage -5/+20 V Recommended operationalvalues ID Continuous Drain Current A VGS=20V, Tc=25oC
24 VGS=20V, Tc=100oC
ID(pulse) Pulsed Drain Current 80 A Pulse width tp limited by TJmax PD Power Dissipation 192 W Tc=25oC, TJ=150oC TJ, TSTG Operating Junction and Storage Temperature -55 to +175 o C VDS = 1200 V RDS(on) = 80 mΩ ID@25 o C = 36 A
Electrical Characteristics (TC=25 C unless otherwise specified) o Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source BreakdownVoltage 1200 V VGS=0V, ID=100μA VGS(th) Gate Threshold Voltage 2.0 2.4 4.0 V VDS=VGS, ID=5mA 1.8 o VDS=VGS, ID=5mA, TJ=150 C IDSS Zero Gate Voltage Drain Current 1 100 µA VDS=1200V, VGS=0V IGSS+ Gate-Source LeakageCurrent 10 250 nA VDS=0V, VGS=25V IGSS- Gate-Source LeakageCurrent 10 250 nA VDS=0V, VGS=-10V RDS(on) Drain-Source On-State Resistance 80 98 mΩ VGS=20V, ID=20A 140 o VGS=20V, ID=20A, TJ=150 C Ciss Input Capacitance 1475 pF VGS=0V VDS=1000V f=1MHz VAC=25mV Coss Output Capacitance 94 Crss Reverse Transfer Capacitance 11 Eoss Coss Stored Energy 52 µJ EON Turn-On Switching Energy 564 µJ VDS=800V, VGS=-5V/20V ID=20A, RG(ext)=2.5Ω, L=200μHEOFF Turn-Off Switching Energy 260 td(on) Turn-On Delay Time 9.3 ns VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω tr Rise Time 9.5 td(off) Turn-Off Delay Time 18 tf Fall Time 7.6 RG(int) Internal Gate Resistance 3.1 Ω f=1MHz, VAC=25mV QGS Gate to Source Charge 24 nC VDS=800V VGS=-5V/20V ID=20A QGD Gate to Drain Charge 15 QG Total Gate Charge 79 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.6 V VGS=-5V, ISD=10A
3.3 VGS=-5V, ISD=10A, TJ=150oC
IS Continuous Diode Forward Current 44 A TC=25oC trr Reverse Recover Time 35 ns VR=800V, ISD=20A dif/dt=290A/μs Qrr Reverse Recovery Charge 91 nC Irrm Peak Reverse RecoveryCurrent 4.5 A Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.65 o C/W RθJA Thermal Resistance from Junction to Ambient 40 2021. 11.24 Revision No : 0 2/6
60 T =-55
60 T =25
Figure 1. Output Characteristics TJ = -55 ºC Figure 2. Output Characteristics TJ = 25 ºC Figure 3. Output Characteristics TJ = 150 ºC Figure 4. Normalized On-Resistance vs. Temperature Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature
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