WF8M32-XG4DX5 WEDC | Alldatasheet

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1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED* White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. 8Mx32 5V FLASH MODULE

FEATURES

/square6 Access Time of 100, 120, 150ns /square6 Packaging:

  • 68 Lead, 40 mm (1.560") square hermetic CQFP, 5.2 mm (0.205") high (Package 503) /square6 Sector Architecture
  • 32 equal size sectors of 64KBytes per each 2Mx8 chip
  • Any combination of sectors can be erased. Also supports full chip erase. /square6 100,000 Write/Erase Cycles Minimum /square6 Organized as 8Mx32 /square6 Commercial, Industrial, and Military Temperature Ranges /square6 5 Volt Read and Write. 5V ± 10% Supply. /square6 Low Power CMOS /square6 Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. /square6 Supports reading or programming data to a sector not being erased. /square6 RESET# pin resets internal state machine to the read mode. (Not available in HIP package for WF2M32-XHX5) /square6 Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation, Seperate Power and Ground Planes to improve noise immunity. /square6 Built in Buffering. * This product is under development, is not qualifi ed or characterized and is subject to change or cancellation without notice. Note: For programming information refer to Flash Programming 16M5 Application Note. PIN DESCRIPTION I/O0-31 Data Inputs/Outputs A0-22 Address Inputs WE Write Enable CS1-4 Chip Selects OE Output Enable VCC Power Supply RESET Reset GND Ground NC Not Connected FIGURE 1 – PIN CONFIGURATIONFOR WF8M32-XG4DX5 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 VCC A11 A12 A13 A14 A15 A16 CS2# OE# CS4# A17 A18 A19 A20 A21 RESET# A22 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 NC CS1# GND CS3# WE# A10 VCC BLOCK DIAGRAM Top View 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 2M x 8 I/O0-31 Interface CS1# I/O 0-7 I/O 8-15 I/O 16-23 I/O 24-31 CS2# CS3# CS4# RESET# CS1-4# WE# OE# A0-22 CS1# selects I/O0-7, CS2# selects I/O8-15, CS3# selects I/O16-23, CS4# selects I/O24-31

2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. CAPACITANCE TA = +25°C Parameter Symbol Conditions Max Unit OE# capacitance C OE VIN = 0 V, f = 1.0 MHz 20 pF WE# capacitance C WE VIN = 0 V, f = 1.0 MHz 20 pF CS1-4# capacitance C CS VIN = 0 V, f = 1.0 MHz 20 pF Data I/O capacitance C I/O VI/O = 0 V, f = 1.0 MHz 60 pF Address input capacitance C AD VIN = 0 V, f = 1.0 MHz 20 pF RESET# capacitance C RST VIN = 0 V, f = 1.0 MHz 20 pF This parameter is guaranteed by design but not tested. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Voltage on Any Pin Relative to V SS VT -2.0 to +7.0 V Power Dissipation P T 8W Storage Temperature T STG -65 to +125 °C Short Circuit Output Current I OS 100 mA Endurance - Write/Erase Cycles (Mil Temp) 100,000 min cycles Data Retention (Mil Temp) 20 years RECOMMENDED DC OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5 V Ground V SS 00 0 V Input High Voltage V IH 2.0 — V CC + 0.5 V Input Low Voltage V IL -0.5 — +0.8 V Operating Temperature (Mil.) T A -55 — +125 °C Operating Temperature (Ind.) T A -40 — +85 °C DC CHARACTERISTICS – CMOS COMPATIBLE VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Symbol Conditions Min Max Unit Input Leakage Current I LI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current I LOx32 VCC = 5.5, VIN = GND to VCC 10 µA VCC Active Current for Read (1) I CC1 CS# = VIL, OE# = VIH, f = 5MHz 640 mA VCC Active Current for Program or Erase (2) I CC2 CS# = VIL, OE# = VIH 960 mA VCC Standby Current I CC3 VCC = 5.5, CS# = VIH, f = 5MHz, RESET# = VCC ± 0.3V 160 mA Output Low Voltage V OL IOL = 12.0 mA, VCC = 4.5 0.45 V Output High Voltage V OH IOH = -2.5 mA, VCC = 4.5 0.85 x V CC V Low VCC Lock-Out Voltage V LKO 3.2 4.2 V Notes: 1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than 2mA/MHz, with OE# at VIH. 2. I CC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions V IL = 0.3V, VIH = VCC - 0.3V

3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -100 -120 -150 Unit Min Max Min Max Min Max Write Cycle Time t AVAV tWC 100 120 150 ns Chip Select Setup Time t ELWL tCS 000 n s Write Enable Pulse Width t WLWH tWP 50 50 50 ns Address Setup Time t AVWL tAS 000 n s Data Setup Time t DVWH tDS 50 50 50 ns Data Hold Time t WHDX tDH 000 n s Address Hold Time t WLAX tAH 50 50 50 ns Write Enable Pulse Width High t WHWL tWPH 20 20 20 ns Duration of Byte Programming Operation (1) t WHWH1 300 300 300 µs Sector Erase (2) t WHWH2 15 15 15 sec Read Recovery Time before Write t GHWL 000 µ s VCC Setup Time t VCS 50 50 50 µs Chip Programming Time 44 44 44 sec Chip Erase Time (3) 256 256 256 ns Output Enable Hold Time (4) t OEH 10 10 10 ns RESET# Pulse Width t RP 500 500 500 ns NOTES: 1. Typical value for t WHWH1 is 7µs. 2. Typical value for t WHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling. AC CHARACTERISTICS – READ-ONLY OPERATIONS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -100 -120 -150 Unit Min Max Min Max Min Max Read Cycle Time t AVAV tRC 100 120 150 ns Address Access Time t AVQV tACC 100 120 150 ns Chip Select Access Time t ELQV tCE 100 120 150 ns Output Enable to Output Valid t GLQV tOE 50 50 55 ns Chip Select High to Output High Z (1) t EHQZ tDF 30 30 35 ns Output Enable High to Output High Z (1) t GHQZ tDF 30 30 35 ns Output Hold from Addresses, CS# or OE# Change, whichever is First tAXQX tOH 000 n s RST Low to Read Mode (1) tReady 20 20 20 µs 1. Guaranteed by design, not tested.

5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. FIGURE 4 – AC WAVEFORMS FOR READ OPERATIONS sesserddA CS# OE# WE# stuptuO Z hgiH elbatS sesserddA t EO t CR dilaV tuptuO t EC t CCA t HO Z hgiH t FD

6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to each chip. 4. D OUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED sesserddA CS# E#O E#W ataD V 0.5 APAPH5555 t CW t SC DP D#7 D TUO t HA t HPW t HD t SD Data# Polling t SA t CR t PW H0A0A t EO t FD t HO t EC t LWHG t 1HWHW

7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS NOTE: 1. SA is the sector address for Sector Erase. Addresses CS# OE# WE# Data VCC 5555H 2AAAH 2AAAH SA 5555H 5555H tWP tCS tVCS 1010H/3030H5555H8080H5555H AAAAHAAAAH tAH tAS tGHWL tWPH tDH tDS

8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS S#C E#O E#W t EO t EO t EC t HC t HO O# #/I 7 O/I dna 51 O/I 7 O/I dna 51 ataD dilaV Z hgiH O/I 6-0 O/I dna 41-8 dilavnI O/I 51-0 ataD dilaV t FD O/I 7 dna O/I 51 O/I 6-0 dna O/I 41-8 t HEO t 2 ro 1 HWHWataD

9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to each chip. 4. DOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. ALTERNATE CS# CONTROLLED PROGRAMMING OPERATION TIMINGS sesserddA E#W E#O S#C ataD V 0.5 APAPH5555 t CW t SW DP D#7 D TUO t HA t HPC t PC t HD t SD Data# Polling t SA t LEHG H0A t 1HWHW

10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF8M32-XG4DX5 October 1999 Rev. 3 ADVANCED White Electronic Designs Corp. reserves the right to change products or specifi cations without notice. PACKAGE 503: 68 LEAD, CERAMIC QUAD FLAT PACK DUAL CAVITY, CQFP (G4D) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

ORDERING INFORMATION

5 = 5 V DEVICE GRADE: M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE: G4D = 40mm CQFP (Package 503) ACCESS TIME (ns) ORGANIZATION, 8M x 32 User confi gurable as 16M x 16 or 32M x 8 Flash WHITE ELECTRONIC DESIGNS CORP. W F 8M32 - XXX G4D X 5 5.2 (0.205) MAX 0.010 + 0.002 - 0.001 0.38 (0.015) ± 0.08 (0.003)

68 PLACES

1.27 (0.050) TYP 38 (1.50) TYP

4 PLACES

5.1 (0.200) ± 0.25 (0.010) 12.7 (0.500) ± 0.5 (0.020)