WF512K32N-120G2UI5A

WF512K32-XXX5 WEDC | Alldatasheet

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Technical content

1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 I/O8 I/O9 I/O10 A14 A16 A11 A18 I/O0 I/O1 I/O2 WE2# CS2# GND I/O A10 A15 VCC CS1# NC I/O I/O15 I/O14 I/O13 I/O12 OE# A WE1# I/O7 I/O6 I/O5 I/O4 I/O24 I/O25 I/O26 A12 NC A13 I/O16 I/O17 I/O18 VCC CS4# WE4# I/O27 WE3# CS3# GND I/O19 I/O31 I/O30 I/O29 I/O28 I/O23 I/O22 I/O21 I/O20 11 22 33 44 55 66 1 12 23 34 45 56

FEATURES

/square6 Access Times of 60, 70, 90, 120, 150ns /square6 Packaging

• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400(1)).
• 68 lead, 40mm, Low Capacitance Hermetic CQFP (Package 501)1
• 68 lead, 40mm, Low Profi le 3.5mm (0.140"), CQFP (Package 502)1
• 68 lead, 22.4mm (0.880") Low Profi le CQFP (G2U) 3.5mm (0.140") high, (Package 510)1
• 68 lead, 22.4mm (0.880") CQFP (G2L) 5.08mm (0.200") high, Package (528) /square6 1,000,000 Erase/Program Cycles Minimum /square6 Sector Architecture
• 8 equal size sectors of 64KBytes each
• Any combination of sectors can be concurrently erased. Also supports full chip erase /square6 Organized as 512Kx32 Pin Description Block Diagram FIGURE 1 – PIN CONFIGURATION FOR WF512K32N-XH1X5 512Kx32 5V FLASH MODULE, SMD 5962-94612 Top View WE1#C S 1#C S 2#C S 3#C S 4#WE4#WE3#WE2# 512K x 8 512K x 8 512K x 8 512K x 8 OE# A0-18 I/O0-7 I/O24-31I/O16-23I/O8-15 8888 /square6 Commercial, Industrial and Military Temperature Ranges /square6 5 Volt Programming. 5V ± 10% Supply. /square6 Low Power CMOS, 6.5mA Standby /square6 Embedded Erase and Program Algorithms /square6 TTL Compatible Inputs and CMOS Outputs /square6 Built-in Decoupling Caps for Low Noise Operation /square6 Page Program Operation and Internal Program Control Time /square6 Weight WF512K32 - XG2UX5 - 8 grams typical WF512K32N - XH1X5 - 13 grams typical WF512K32 - XG4TX5 1 - 20 grams typical WF512K32-XG2LX5 - 8 grams typical * This product is subject to change without notice. Note 1: Package Not Recommended for New Design See Flash Programming Application Note 4M5 for algorithms. I/O0-31 Data Inputs/Outputs A0-18 Address Inputs WE1-4# Write Enables CS1-4# Chip Selects OE# Output Enable V CC Power Supply GND Ground NC Not Connected

3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 Absolute Maximum Ratings (1) NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,inputs may overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is Vcc + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns. 3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns. Parameter Unit Operating Temperature -55 to +125 °C Supply Voltage Range (VCC) -2.0 to +7.0 V Signal voltage range (any pin except A9) (2) -2.0 to +7.0 V Storage Temperature Range -65 to +150 °C Lead Temperature (soldering, 10 seconds) +300 °C Data Retention (Mil Temp) 20 years Endurance - write/erase cycles (Mil Temp) 1,000,000 cycles min. A9 Voltage for sector protect (V RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage V CC 4.5 5.5 V Input High Voltage V IH 2.0 V CC + 0.5 V Input Low Voltage V IL -0.5 +0.8 V Operating Temp. (Mil.) T A -55 +125 °C Operating Temp. (Ind.) T A -40 +85 °C A9 Voltage for Sector Protect V ID 11.5 12.5 V CAPACITANCE TA = +25°C Parameter Symbol Conditions Max Unit OE# capacitance C OE VIN = 0V, f = 1.0 MHz 50 pF WE1-4# capacitance HIP (PGA) CWE VIN = 0V, f = 1.0 MHz pF CQFP G4T 50 CQFP G2U/G2L 15 CS1-4# capacitance C CS VIN = 0V, f = 1.0 MHz 20 pF Data# I/O capacitance C I/O VI/O = 0V, f = 1.0 MHz 20 pF Address input capacitance C AD VIN = 0V, f = 1.0 MHz 50 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C Parameter Sym Conditions Min Max Units Input Leakage Current I LI VCC = 5.5, VIN = GND to VCC 10 µA Output Leakage Current I LOx32 CS# = VIH, OE# = VIH, VOUT = GND to VCC 10 µA VCC Active Current for Read (1) I CC1 CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 190 mA VCC Active Current for Program or Erase (2) I CC2 CS# = VIH, OE# = VIH 240 mA VCC Standby Current I CC4 VCC = 5.5, CS = VIH, f = 5MHz 6.5 mA VCC Static Current I CC3 VCC = 5.5, CS = VIH 0.6 mA Output Low Voltage V OL IOL = 8.0mA, VCC = 4.5 0.45 V Output High Voltage V OH1 IOH = 2.5mA, VCC = 4.5 0.85 X VCC V Low VCC Lock-Out Voltage VLKO 3.2 4.2 V DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V NOTES: 1. The I CC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. I CC active while Embedded Algorithm (program or erase) is in progress.

4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -60 -70 -90 -120 -150 Unit Min Max Min Max Min Max Min Max Min Max Write Cycle Time t AVAV tWC 60 70 90 120 150 ns Write Enable Setup Time t WLEL tWS 00000 n s Chip Select Pulse Width t ELEH tCP 40 45 45 50 50 ns Address Setup Time t AVEL tAS 00000 n s Data Setup Time t DVEH tDS 40 45 45 50 50 ns Data Hold Time t EHDX tDH 00000 n s Address Hold Time t ELAX tAH 40 45 45 50 50 ns Chip Select Pulse Width High t EHEL tCPH 20 20 20 20 20 ns Duration of Byte Programming Operation (1) t WHWH1 300 300 300 300 300 µs Sector Erase Time (2) t WHWH2 15 15 15 15 15 sec Read Recovery Time t GHEL 00000 n s Chip Programming Time 11 11 11 11 11 sec Chip Erase Time (3) 64 64 64 64 64 sec NOTES: 1. Typical value for t WHWH1 is 7µs. 2. Typical value for t WHWH2 is 1sec. 3. Typical value for Chip Erase Time is 8sec. I Current Source D.U.T. C = 50 pfeff IOL V 1.5V (Bipolar Supply) Z Current Source OH FIGURE. 4 – AC TEST CIRCUIT Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. VZ is typically the midpoint of V OH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. AC Test Conditions Parameter Typ Unit Input Pulse Levels V IL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V

5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,WE# CONTROLLED VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -60 -70 -90 -120 -150 Unit Min Max Min Max Min Max Min Max Min Max Write Cycle Time t AVAV tWC 60 70 90 120 150 ns Chip Select Setup Time t ELWL tCS 00000 n s Write Enable Pulse Width t WLWH tWP 40 45 45 50 50 ns Address Setup Time t AVWH tAS 00000 n s Data Setup Time t DVWH tDS 40 45 45 50 50 ns Data Hold Time t WHDX tDH 00000 n s Address Hold Time t WHAX tAH 40 45 45 50 50 ns Write Enable Pulse Width High t WHWL tWPH 20 20 20 20 20 ns Duration of Byte Programming Operation (1) t WHWH1 300 300 300 300 300 µs Sector Erase Time (2) t WHWH2 15 15 15 15 15 sec Read Recovery Time before Write t GHWL 00000 n s VCC Set-up Time t VCS 50 50 50 50 50 µs Chip Programming Time 11 11 11 11 11 sec Output Enable Setup Time t OES 00000 n s Output Enable Hold Time (4) t OEH 10 10 10 10 10 ns Chip Erase Time (3) 64 64 64 64 64 sec NOTES: 1. Typical value for t WHWH1 is 7µs. 2. Typical value for t WHWH2 is 1sec. 3. Typical value for Chip Erase Time is 8sec. 4. For Toggle and Data Polling. AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,WE# CONTROLLED VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -60 -70 -90 -120 -150 Unit Min Max Min Max Min Max Min Max Min Max Read Cycle Time t AVAV tRC 60 70 90 120 150 ns Address Access Time t AVQV tACC 60 70 90 120 150 ns Chip Select Access Time t ELQV tCE 60 70 90 120 150 ns Output Enable to Output Valid t GLQV tOE 30 35 35 50 55 ns Chip Select to Output High Z (1) t EHQZ tDF 20 20 20 30 35 ns Output Enable High to Output High Z (1) t GHQZ tDF 20 20 20 30 35 ns Output Hold from Address, CS# or OE# Change, whichever is First tAXQX tOH 00000 n s 1. Guaranteed by design, but not tested

6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 FIGURE 5 – AC WAVEFORMS FOR READ OPERATIONS CS# OE# WE#

7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device (for each chip). 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. FIGURE 6 – WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED CS# Data# Polling D7# OE# WE#

8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 FIGURE 7 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS NOTE: 1. SA is the sector address for Sector Erase. Addresses CS# OE# WE# Data VCC 5555H 2AAAH 2AAAH SA 5555H 5555H tWP tCS tVCS 10H/30H55H80H55H AAHAAH tAH tAS tGHWL tWPH tDH tDS

9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 FIGURE 8 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS CS# OE# WE# tOE tCE tCH tOH D7# D7 = Valid Data High Z D0-D6 = Invalid D0-D7 Valid Data tDF D0-D6 tOEH tWHWH 1 or 2 tOE Data

10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 FIGURE 9 – ALTERNATE CS# CONTROLLED PROGRAMMING OPERATION TIMINGS Notes: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device (for each chip). 4. DOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. CS# Data# Polling D7# OE# WE#

11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) 4.60 (0.181) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES oo 0.940" TYP The White 68 lead G2U CQFP fi lls the same fi t and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead inspection advantage of the CQFP form.

13 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 20.31 (0.800) REF 1.27 (0.050) TYP 5.10 (0.200) MAX 24.0 (0.946) ± 0.25 (0.010) 0.23 (0.009) REF R 0.127 (0.005) 2O / 9O 0.89 (0.035) ± 1.14 (0.045) 1.37 (0.054) MIN 0.004 0.940" TYP

14 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 0.38 (0.015) ± 0.08 (0.003)

68 PLACES

1.27 (0.050) TYP 38 (1.50) TYP

4 PLACES

5.1 (0.200) ± 0.25 (0.010) 12.7 (0.500) ± 0.5 (0.020) 0.25 (0.010) ± 0.05 (0.002) 1.27 (0.050) ± 0.1 (0.005) PIN 1 IDENTIFIER Pin 1 Note 1: Package Not Recommended for New Design PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1

15 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11

ORDERING INFORMATION

LEAD FINISH: Blank = Gold plated leads A = Solder dip leads V PP PROGRAMMING VOLTAGE 5 = 5 V DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE: H1 = 1.075" sq. Ceramic Hex In Line Package, HIP (Package 400*) G2U = 22.4mm Ceramic Quad Flat Pack, Low Profi le CQFP (Package 510) G2L = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 528) G4T 1 = 40mm Low Profi le CQFP (Package 502) ACCESS TIME (ns) IMPROVEMENT MARK N = No Connect at pins 21 and 39 in HIP for Upgrade ORGANIZATION, 512K x 32 User confi gurable as 1M x 16 or 2M x 8 FLASH WHITE ELECTRONIC DESIGNS CORP. W F 512K32 X - XXX X X 5 X Note 1: Package Not Recommended for New Design

16 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WF512K32-XXX5 March 2006 Rev. 11 DEVICE TYPE SPEED PACKAGE SMD NO. 512K x 32 Flash Module 150ns 66 pin HIP (H1) 1.075" sq. 5962-94612 01H4X 512K x 32 Flash Module 120ns 66 pin HIP (H1) 1.075" sq. 5962-94612 02H4X 512K x 32 Flash Module 90ns 66 pin HIP (H1) 1.075" sq. 5962-94612 03H4X 512K x 32 Flash Module 70ns 66 pin HIP (H1) 1.075" sq. 5962-94612 04H4X 512K x 32 Flash Module 150ns 68 lead CQFP Low Profi le (G4T) 1 5962-94612 01HTX1 512K x 32 Flash Module 120ns 68 lead CQFP Low Profi le (G4T) 1 5962-94612 02HTX1 512K x 32 Flash Module 90ns 68 lead CQFP Low Profi le (G4T) 1 5962-94612 03HTX1 512K x 32 Flash Module 70ns 68 lead CQFP Low Profi le (G4T) 1 5962-94612 04HTX1 512K x 32 Flash Module 150ns 68 lead CQFP/J (G2U) 5962-94612 01HZX 512K x 32 Flash Module 120ns 68 lead CQFP/J (G2U) 5962-94612 02HZX 512K x 32 Flash Module 90ns 68 lead CQFP/J (G2U) 5962-94612 03HZX 512K x 32 Flash Module 70ns 68 lead CQFP/J (G2U) 5962-94612 04HZX 512K x 32 Flash Module 150ns 68 lead CQFP (G2L) 5962-94612 01HAX 512K x 32 Flash Module 120ns 68 lead CQFP (G2L) 5962-94612 02HAX 512K x 32 Flash Module 90ns 68 lead CQFP (G2L) 5962-94612 03HAX 512K x 32 Flash Module 70ns 68 lead CQFP (G2L) 5962-94612 04HAX