WF5025BL1 | DigiCamel IC Datasheet

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NIPPON PRECISION CIRCUITS INC.—1 Crystal Oscillator Module ICs OVERVIEW The WF5025 series are miniature crystal oscillator module ICs. They feature a damping resistor R D matched to the crystal's characteristics to reduce crystal current. The pad layout is arranged for ﬂip chip mounting, which gives the pattern design more ﬂexibility, even for mounting ultra-miniature crystal oscillators that provide almost no space for wiring patterns. They support fundamental oscillation and 3rd overtone oscillation modes. The WF5025 series can be used to correspond to wide range of applications.

FEATURES

I Pad layout optimized for ﬂip chip mounting I Miniature-crystal matched oscillator characteristics I Operating supply voltage range

2.5V operation: 2.25 to 2.75V
3.0V operation: 2.7 to 3.6V I Recommended operating frequency range
For fundamental oscillator - WF5025AL : 20MHz to 50MHz - WF5025BL1: 20MHz to 100MHz
For 3rd overtone oscillator - WF5025ML : 70MHz to 133MHz I 40 to 85 C operating temperature range I Oscillator capacitor with excellent frequency char- acteristics built-in I Oscillator circuit with damping resistor R D built- in for reduced crystal current I Standby function
High impedance in standby mode, oscillator stops I Low standby current
Power-saving pull-up resistor built-in I Oscillation detector function I Frequency divider built-in (WF5025AL
varies with version: f O , f O /2, f O /4, f O /8, f O /16, f O /32 I CMOS output duty level (1/2VDD) I 50 ± 5% output duty @ 1/2VDD I 30pF output load I Molybdenum-gate CMOS process SERIES CONFIGURATION Note. These versions in parentheses ( ) are under development. Please ask our Sales & Marketing section for further detail.

ORDERING INFORMATION

[V] Oscillation mode Recommended operating frequency range (fundamental oscillation) [MHz] *1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authenticati on. However, the oscil- lator frequency band is not guaranteed. Speciﬁcally, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. Output current DD = 2.5V) [mA] Output frequency Output duty level Standby mode Oscillator stop function Output state WF5025AL1 2.25 to 3.6 Fundamental 20 to 50 4 f O CMOS Y es Hi-Z WF5025AL2 f O WF5025AL3 f O WF5025AL4 f O WF5025AL5 f O /16 WF5025AL6 f O /32 WF5025BL1 *2. The WF5025BL1 has a higher maximum operating frequency, hence the negative resistance is also larger than in the WF5025AL devices. 2.25 to 3.6 Fundamental 20 to 100 8 f O CMOS Y es Hi-Z WF5025MLA 2.25 to 3.6 3rd overtone 70 to 80 O CMOS Y es Hi-Z(WF5025MLB) 80 to 100 WF5025MLC 90 to 133 Device Package WF5025 ××× –3 Wafer form

NIPPON PRECISION CIRCUITS INC.—2 PAD LAYOUT (Unit: µ PIN DESCRIPTION and PAD DIMENSIONS Chip size: 0.75 0.85mm Chip thickness: 180 ± 20µm PAD size: 90µm Chip base: V DD level Name I/O Description Pad dimensions [µm] XY INHN I Output state control input. High impedance when LOW (oscillator stops). Power-saving pull-up resistor built-in. 144.6 413.4 XT I Ampliﬁer input Crystal connection pins. Crystal is connected between XT and XTN. 171.0 144.6 XTN O Ampliﬁer output 579.0 144.6 VDD – Supply voltage 618.2 438.6 QO Output. Output frequency determined by internal circuit to one of f O , f O /2, f O /4, f O /8, f O /16, f O /32. High impedance in standby mode 618.2 705.4 VSS – Ground 131.8 718.2 Q VDD XTN VSS (0,0) (750,850) X Y HA5025 INHN XT NPC

NIPPON PRECISION CIRCUITS INC.—3 BLOCK DIAGRAM For Fundamental Oscillator (WF5025AL , WF5025BL1) For 3rd Overtone Oscillator (WF5025ML INHN = LOW active INHN = LOW active XT VSSVDD Q CG CD Rf XTN INHN RD 1/2 1/21/2 1/2 1/2 XT VSSVDD Q CG CD Rf 1 XTN INHN Rf 2 Cf RD

NIPPON PRECISION CIRCUITS INC.—4 SPECIFICATIONS Absolute Maximum Ratings V SS = 0V Recommended Operating Conditions V SS = 0V Parameter Symbol Condition Rating Unit Supply voltage range V DD 0.5 to +7.0 V Input voltage range V IN 0.5 to V DD + 0.5 V Output voltage range V OUT 0.5 to V DD + 0.5 V Operating temperature range T opr 40 to +85 C Storage temperature range T STG 65 to +150 C Output current I OUT 20 mA Parameter Symbol Condition Rating *1. Values in parentheses ( ) are provisional only. Unit min typ max Operating supply voltage V DD WF5025AL CL 30pF 2.25 – 3.6 V WF5025BL1 CL 30pF 2.25 – 3.6 V WF5025MLA f 80MHz, CL 30pF 2.25 – 3.6 V WF5025MLB f 100MHz, CL WF5025MLC f 100MHz, CL 30pF 2.25 – 3.6 V f 133MHz, CL 15pF 2.25 – 3.6 V Input voltage V IN V SS DD V Operating temperature T OPR 40 – +85 C Operating frequency *2. The operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency band is not guaranteed. Speciﬁcally, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation char- acteristics of components must be carefully evaluated. f O WF5025AL 2 0–5 0 M H z WF5025BL1 *3. When 2.5V operation, the ratings of switching characteristics are difference by the frequency or output load. Refer to “Switching Characteristics”. 20 – 100 MHz WF5025MLA 70 – 80 MHz WF5025MLB (80) – (100) MHz WF5025MLC 90 – 133 MHz

NIPPON PRECISION CIRCUITS INC.—5

Electrical Characteristics

(2.5V operation) V DD = 2.25 to 2.75V , V SS = 0V , Ta = 40 to +85 C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.25V, I OH = 4mA 1.65 1.95 – V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 2.25V, I OL = 4mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW V OH = V DD – – 10 µA V OL = V SS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, C L = 30pF , f = 50MHz WF5025AL1 – 7 14 mA WF5025AL2 – 4.5 9 mA WF5025AL3 – 3.5 7 mA WF5025AL4 – 2.9 5.8 mA WF5025AL5 – 2.5 5 mA WF5025AL6 – 2.4 4.8 mA Standby current I ST Measurement cct 3, INHN = LOW – – 3 µA INHN pull-up resistance R UP1 Measurement cct 4 2 6 12 M Ω R UP2 20 100 200 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator ampliﬁer output resistance R D Design value. A monitor pattern on a wafer is tested. 340 400 460 Ω Built-in capacitance C G Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF C D 8.5 10 11.5 pF

NIPPON PRECISION CIRCUITS INC.—6 WF5025AL × (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 4mA 2.3 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 4mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF , f = 50MHz WF5025AL1 – 8.5 17 mA WF5025AL2 – 5.5 11 mA WF5025AL3 – 4 8 mA WF5025AL4 – 3.3 6.6 mA WF5025AL5 – 2.9 5.8 mA WF5025AL6 – 2.7 5.4 mA Standby current I ST Measurement cct 3, INHN = LOW – – 5 µA INHN pull-up resistance RUP1 Measurement cct 4

248 M Ω

RUP2 15 75 150 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator ampliﬁer output resistance RD Design value. A monitor pattern on a wafer is tested. 340 400 460 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF CD 8.5 10 11.5 pF

NIPPON PRECISION CIRCUITS INC.—7 WF5025BL1 (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. WF5025BL1 (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA 1.65 1.95 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF , f = 100MHz –1 4 2 8 m A Standby current I ST Measurement cct 3, INHN = LOW – – 3 µA INHN pull-up resistance RUP1 Measurement cct 4 2 6 12 M Ω RUP2 20 100 200 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator ampliﬁer output resistance RD Design value. A monitor pattern on a wafer is tested. 170 200 230 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF CD 8.5 10 11.5 pF Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.3 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF , f = 100MHz –1 9 3 8 m A Standby current I ST Measurement cct 3, INHN = LOW – – 5 µA INHN pull-up resistance RUP1 Measurement cct 4 RUP2 15 75 150 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator ampliﬁer output resistance RD Design value. A monitor pattern on a wafer is tested. 170 200 230 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF CD 8.5 10 11.5 pF

NIPPON PRECISION CIRCUITS INC.—8 WF5025ML× (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating*1 *1. Values in parentheses ( ) are provisional only. Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA 1.65 1.95 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD –– V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption IDD1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF f = 100MHz WF5025MLB – TBD TBD mA f = 133MHz WF5025MLC – 15 30 mA IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF f = 72MHz WF5025MLA – 11 22 mA f = 100MHz WF5025MLB – TBD TBD mA f = 100MHz WF5025MLC – 15 30 mA Standby current I ST Measurement cct 3, INHN = LOW – – 3 µA INHN pull-up resistance RUP1 Measurement cct 4 2 6 12 M Ω RUP2 20 100 200 k Ω AC feedback resistance R f1 Design value. A monitor pattern on a wafer is tested. WF5025MLA 3.99 4.7 5.41 k Ω WF5025MLB TBD TBD TBD k Ω WF5025MLC 2.97 3.5 4.03 k Ω DC feedback resistance R f2 Measurement cct 5 50 – 150 k Ω Oscillator ampliﬁer output resistance RD Design value. A monitor pattern on a wafer is tested. 85 100 115 Ω AC feedback capacitance C f Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. WF5025MLA 1.70 2 2.30 pF WF5025MLC 0.85 1 1.15 pF CD Design value. A monitor pattern on a wafer is tested. WF5025MLA 3.40 4 4.60 pF WF5025MLC 3.40 4 4.60 pF

NIPPON PRECISION CIRCUITS INC.—9 WF5025ML× (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating*1 *1. Values in parentheses ( ) are provisional only. Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.3 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD –– V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption IDD1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF f = 100MHz WF5025MLB – TBD TBD mA f = 133MHz WF5025MLC – 20 40 mA IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF f = 72MHz WF5025MLA – 15 30 mA f = 100MHz WF5025MLB – TBD TBD mA f = 100MHz WF5025MLC – 20 40 mA Standby current I ST Measurement cct 3, INHN = LOW – – 5 µA INHN pull-up resistance RUP1 Measurement cct 4 RUP2 15 75 150 k Ω AC feedback resistance R f1 Design value. A monitor pattern on a wafer is tested. WF5025MLA 3.99 4.7 5.41 k Ω WF5025MLB TBD TBD TBD k Ω WF5025MLC 2.97 3.5 4.03 k Ω DC feedback resistance R f2 Measurement cct 5 50 – 150 k Ω Oscillator ampliﬁer output resistance RD Design value. A monitor pattern on a wafer is tested. 85 100 115 Ω AC feedback capacitance C f Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. WF5025MLA 1.70 2 2.30 pF WF5025MLC 0.85 1 1.15 pF CD Design value. A monitor pattern on a wafer is tested. WF5025MLA 3.40 4 4.60 pF WF5025MLC 3.40 4 4.60 pF

NIPPON PRECISION CIRCUITS INC.—10 Switching Characteristics WF5025AL× (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. WF5025AL× (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 3 6 ns tr2 CL = 30pF – 5 10 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 3 6 ns tf2 CL = 30pF – 5 10 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25°C, f = 50MHz CL = 15pF 45 – 55 % Duty2 C L = 30pF 45 – 55 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2.5 5 ns tr2 CL = 30pF – 4.5 9 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2.5 5 ns tf2 CL = 30pF – 4.5 9 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25°C, f = 50MHz CL = 15pF 45 – 55 % Duty2 C L = 30pF 45 – 55 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns

NIPPON PRECISION CIRCUITS INC.—11 WF5025BL1 (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. WF5025BL1 (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2 4 ns tr2 CL = 30pF – 3 6 ns tr3 Measurement cct 3, load cct 1, 0.2VDD to 0.8VDD CL = 30pF – 2.5 5 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2 4 ns tf2 CL = 30pF – 3 6 ns tf3 Measurement cct 3, load cct 1, 0.8VDD to 0.2VDD CL = 30pF – 2.5 5 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25°C CL = 15pF f = 100MHz 4 5–5 5 % Duty2 CL = 30pF f = 80MHz 4 5–5 5 % Duty3 CL = 30pF f = 100MHz 4 0–6 0 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3 ns tr2 CL = 30pF – 2.5 5 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3 ns tf2 CL = 30pF – 2.5 5 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25°C, f = 100MHz CL = 15pF 45 – 55 % Duty2 C L = 30pF 45 – 55 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns

NIPPON PRECISION CIRCUITS INC.—12 WF5025ML× (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. WF5025ML× (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating*1 *1. Values in parentheses ( ) are provisional only. Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2 4 ns tr2 CL = 30pF – 3 6 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2 4 ns tf2 CL = 30pF – 3 6 ns Output duty cycle*2 *2. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF f = 72MHz WF5025MLA 45 – 55 % f = 100MHz WF5025MLB (45) – (55) % f = 133MHz WF5025MLC 45 – 55 % Duty2 Measurement cct 3, load cct 1, V DD = 2.5V, Ta = 25°C, CL = 30pF f = 72MHz WF5025MLA 45 – 55 % f = 100MHz WF5025MLB (40) – (60) % f = 100MHz WF5025MLC 40 – 60 % Output disable delay time *3. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*3 tPZL – – 100 ns Parameter Symbol Condition Rating*1 *1. Values in parentheses ( ) are provisional only. Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3 ns tr2 CL = 30pF – 2.5 5 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3 ns tf2 CL = 30pF – 2.5 5 ns Output duty cycle*2 *2. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF f = 72MHz WF5025MLA 45 – 55 % f = 100MHz WF5025MLB (45) – (55) % f = 133MHz WF5025MLC 45 – 55 % Duty2 Measurement cct 3, load cct 1, V DD = 3.0V, Ta = 25°C, CL = 30pF f = 72MHz WF5025MLA 45 – 55 % f = 100MHz WF5025MLB (45) – (55) % Measurement cct 3, load cct 1, VDD = 3.3V, Ta = 25°C, CL = 30pF , f = 100MHz WF5025MLC 45 – 55 % Output disable delay time*3 *3. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*3 tPZL – – 100 ns

NIPPON PRECISION CIRCUITS INC.—13 FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. Power-save Pull-up Resistor The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. Version INHN Q Oscillator WF5025AL× HIGH (or open) Any fO, fO/2, fO/4, fO/8, fO/16 or fO/32 output frequency Normal operation WF5025BL1, ML× fO WF5025AL×, BL1, ML× LOW High impedance Stopped

NIPPON PRECISION CIRCUITS INC.—14 MEASUREMENT CIRCUITS Measurement cct 1 2Vp-p, 10MHz sine wave input signal C1: 0.001µF R1: 50Ω R2: 5025AL× : 412Ω (2.5V operation) 575Ω (3.0V operation) 5025BL1, ML× : 206Ω (2.5V operation) 287Ω (3.0V operation) Measurement cct 2 Measurement cct 3 Signal Generator VDD VSS XT Q VOH Q output VDD XTN INHN VOH VOL V A IZVDD VSS XT Q XTN INHN IZ, IOL X'tal IDD1, IDD2 ISTA VDD VSS XT Q XTN INHN Measurement cct 4 Measurement cct 5 Measurement cct 6 2Vp-p, 10MHz sine wave input signal C1: 0.001µF R1: 50Ω Load cct 1 IPR A V VPR VDD IPR (VPR = VSS) RUP2 = IPR (VPR = 0.7VDD) VDD VPR RUP1 = VDD VSS XT Q XTN INHN IRf A VDD VSS XT Q XTN INHN Rf = VDD IRf Rf 2 = VDD IRf Signal Generator VDD VSS XT Q XTN INHN Q output CL (Including probe capacitance)

NIPPON PRECISION CIRCUITS INC.—15 Switching Time Measurement Waveform Output duty level, tr, tf Output duty cycle Output Enable/Disable Delay when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay. tr3 tf3 Q output DUTY measurement voltage (0.5VDD) TW tr1,tr2 0.9VDD 0.1VDD 0.8VDD 0.2VDD 0.9VDD 0.1VDD 0.8VDD 0.2VDD tf1,tf2 DUTY measurement voltage (0.5VDD)Q output TW T DUTY= TW/ T 100 (%) Q output INHN VIH VIL tPLZ tPZL INHN input waveform tr = tf 10ns

NIPPON PRECISION CIRCUITS INC.—16 NC0315CE 2005.11 Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful inﬂuence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from NIPPON PRECISION CIRCUITS INC. (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the speciﬁcations of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modiﬁcation. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are req uested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales @npc.co.jp

Product Information

WF5025BL1 specifications and overview.

Summary

Crystal Oscillator Module ICs

Description

Crystal Oscillator Module ICs

Source title WF5025BL1 Datasheet(PDF) - Nippon Precision Circuits Inc

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