WAS300M12BM2 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 8
Technical content
www.iscsemi.com 2023-9-41
FEATURES
- VDS=1200V,RDS(on)=5.3mΩ（max）
- ZeroReverseRecovery CurrentfromDiode
- ZeroTurn-OffTailCurrentfromMOSFET
- High-Frequency Operation
- Easeof Paralleling
- UltraLowLoss
APPLICATIONS
- Solarand WindInverters
- UPSandSMPS
- MotorDrives AbsoluteMaximumRatings(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS VALUE UNIT VDS max Drain-SourceVoltage 1200 V VGS max Gate-SourceOpetationVoltage AbsoluteMaximumValues -10/+25 V VGS op Gate-SourceOpetationVoltage RecommendedOperationalValues -5/+20 V ID ContinuousDrainCurrent VGS=20V,Tc=25℃ 400 A VGS=20V,Tc=90℃ 300 A ID(pulsed) MaximumPulsedDrain-SourceCurrent VGS=20V, Tvj=25℃, tpmax Limited by Tvj max 1500 A Ptot Totalpowerdissipation TC=25˚C,TJ=150˚C 1670 W Tvjop OperatingJunctionTemperature -40~150 ℃ Tvjmax MaximumJunctionTemperature 175 ℃
www.iscsemi.com 2023-9-42 MOSFETCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID =2mA 1200 -- -- V VGS(th) GateThresholdVoltage VDS =VGS,ID =15mA 2.0 2.5 4.0 V RDS(on) Drain-SourceOn-stageResistance VGS=20V;ID=300A -- 4.2 5.3 mΩ VGS=20V;ID=300A;TVJ=175°C -- 7.7 -- IGSS GateSourceLeakageCurrent VGS=20V;VDS=0V -- 1 100 nA IDSS ZeroGateVoltageDrainCurrent VDS =1200V,VGS =0V -- 600 2000 uA Ciss InputCapacitance VGS =0V, VDS =600V, f=0.2MHz VAC=25mV -- 8430 -- pFCoss OutputCapacitance -- 505 -- Crss ReverseTransferCapacitance -- 35 -- Qg TotalGateCharge VDS =800V, ID=300A, VGS=-5V/+20V -- 560 -- nCQgs Gate-SourceCharge -- 112 -- Qgd Gate-DrainCharge -- 60 -- td(on) Turn-onDelayTime TVJ=25°C, VGS=-5/+20V,ID=300A, VDS=600V,Rg=2.5Ω, -- 215 -- ns tr Turn-onRiseTime -- 109 -- td(off) Turn-offDelayTime -- 603 -- tf Turn-offFallTime -- 60 -- Eon Turn-OnSwitchingEnergy -- 22.4 -- mJ Eoff Turn-OffSwitchingEnergy -- 13 -- td(on) Turn-onDelayTime TVJ=25°C, VGS=-5/+20V,ID=300A, VDS=600V,Rg=2.5Ω, -- 183 -- ns tr Turn-onRiseTime -- 98 -- td(off) Turn-offDelayTime -- 660 -- tf Turn-offFallTime -- 46 -- Eon Turn-OnSwitchingEnergy -- 22.8 -- mJ Eoff Turn-OffSwitchingEnergy -- 14.5 --
www.iscsemi.com 2023-9-43 DiodeCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VSD DiodeForwardVoltage ISD=300A;VGS=0 -- 1.6 2.0 V ISD=300A;VGS=0;TJ=175°C -- 2.0 2.7 ModuleCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Visol CaseIsolationVoltage t=1min,f=50Hz 3500 -- -- V RthJC Thermal Resistance Junction to Case PerMOSFET -- 0.14 K/W Mt ModuleElectrodesTorque Recommended(M6) 3.0 -- 6.0 N.m Ms ModuletoSinkTorque Recommended(M6) 3.0 -- 6.0 G WeightofModule -- 300 -- g
www.iscsemi.com 2023-9-44 TypicalCharacteristics
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www.iscsemi.com 2023-9-46
www.iscsemi.com 2023-9-47 CircuitDiagram
www.iscsemi.com 2023-9-48 PackageDimensions(UNIT:MM): PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose, nordoes ISCassumeanyliability arisingfrom theapplication oruse ofanyproducts, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.