WAS110M12BM2 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 11
Technical content
www.iscsemi.com 2023-9-21
FEATURES
- VDS=1200V,RDS(on)=16mΩ（max）
- ZeroReverseRecovery CurrentfromDiode
- ZeroTurn-OffTailCurrentfromMOSFET
- High-Frequency Operation
- Easeof Paralleling
- UltraLowLoss
APPLICATIONS
- InductionHeating
- Solarand WindInverters
- DC/ACConverters AbsoluteMaximumRatings(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS VALUE UNIT VDS max Drain-SourceVoltage 1200 V VGS max Gate-SourceOpetationVoltage AbsoluteMaximumValues -10/+25 V VGS op Gate-SourceOpetationVoltage RecommendedOperationalValues -5/+20 V ID ContinuousDrainCurrent VGS=20V,Tc=25℃ 200 A VGS=20V,Tc=90℃ 144 A ID(pulsed) MaximumPulsedDrain-SourceCurrent VGS=20V,Tvj=25℃, tpmax Limited byTvj max 480 A TJ Max.OperatingJunctionTemperature -40~175 ℃ Ptot Totalpowerdissipation Tc=90℃ 365 W
www.iscsemi.com 2023-9-22 MOSFETChaRACTERISTICS(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V; 1200 -- -- V VGS(th) GateThresholdVoltage VDS =VGS,ID =6mA 1.8 2.6 4.0 V RDS(on) Drain-SourceOn-stageResistance VGS=20V;ID=120A -- 13 16 mΩ VGS=20V;ID=120A;TJ=150°C -- 23 -- IGSS GateSourceLeakageCurrent VGS=20V;VDS=0V -- -- 1.5 uA IDSS ZeroGateVoltageDrainCurrent VDS =1200V,VGS =0V -- 0.45 3 mA Ciss InputCapacitance VGS =0V, VDS =800V, f=0.2MHz VAC=25mV -- 8395 -- pFCoss OutputCapacitance -- 502 -- Crss ReverseTransferCapacitance -- 34 -- Qg TotalGateCharge VDS =800V, ID=120A, VGS=-5V/+25V -- 555 -- nCQgs Gate-SourceCharge -- 105 -- Qgd Gate-DrainCharge -- 60 -- Eon Turn-OnSwitchingEnergy TJ=25°C, VGS=-5/+20V,ID=120A, VDS=600V,Rg=2.5Ω, L=22.5uH -- 8.6 -- mJ Eoff Turn-OffSwitchingEnergy -- 4.4 -- Eon Turn-OnSwitchingEnergy TJ=150°C, VGS=-5/+20V,ID=120A, VDS=600V,Rg=2.5Ω, L=22.5uH -- 7.6 -- mJ Eoff Turn-OffSwitchingEnergy -- 4.3 --
www.iscsemi.com 2023-9-23 DiodeCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VSD DiodeForwardVoltage ISD=120A -- 1.53 1.8 VISD=120A;TJ=150°C -- 1.92 2.7 trr ReverseRecoveryTime VGS = -5 V, ISD = 120 A, VDS = 600V TVJ =150°C -- 120 -- ns Qrr ReverseRecoveryCharge -- 4.8 -- uC IRRM PeakReverseRecovery Current -- 173 -- A ModuleCharacteristics(TC=25℃ unlessotherwisespecified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Visol CaseIsolationVoltage t=1min,f=50Hz 3500 -- -- V Tjmax MaximumJunctionTemperature -- -- 175 ℃ Tvjop OperatingJunctionTemperature -40 -- 175 ℃ Mt ModuleElectrodesTorque Recommended(M6) 3.0 -- 6.0 N.m Ms ModuletoSinkTorque Recommended(M6) 3.0 -- 6.0 G WeightofModule -- 300 -- g
www.iscsemi.com 2023-9-24 TypicalCharacteristics
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www.iscsemi.com 2023-9-29 CircuitDiagram
www.iscsemi.com 2023-9-210 PackageDimensions(UNIT:MM): PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose,
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