W3EG2256M72ASSR265AJD3XG

W3EG2256M72ASSR-JD3 WEDC | Alldatasheet

Document overview

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Technical content

November, 04 Rev. 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com W3EG2256M72ASSR-JD3 -AJD3 PRELIMINARY*

FEATURES

/square6 Double-data-rate architecture /square6 DDR200, and DDR266:

• JEDEC design specifi cations /square6 Bi-directional data strobes (DQS) /square6 Differential clock inputs (CK & CK#) /square6 Programmable Read Latency 2,2.5 (clock) /square6 Programmable Burst Length (2,4,8) /square6 Programmable Burst type (sequential & interleave) /square6 Edge aligned data output, center aligned data input. /square6 Auto and self refresh /square6 Serial presence detect /square6 Dual Rank /square6 Power supply: VCC = 2.5V ± 0.2V /square6 JEDEC standard 184 pin DIMM package
• Package height options: NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option

DESCRIPTION

The W3EG2256M72ASSR is a 2x256Mx72 Double Data Rate SDRAM memory module based on 1Gb DDR SDRAM components. The module consists of eighteen 512Mx4 stacks, in 66 pin TSOP packages mounted on a 184 pin FR4 substrate. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. * This product is under development, is not qualifi ed or characterized and is subject to change without notice. 4GB – 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL OPERATING FREQUENCIES DDR266 @CL=2 DDR266 @CL=2 DDR266 @CL=2.5 DDR200 @CL=2 Clock Speed 133MHz 133MHz 133MHz 100MHz CL-t

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1V REF 47 DQS8 93 V SS 139 V SS

2 DQ0 48 A0 94 DQ4 140 DQS17

3V SS 49 CB2 95 DQ5 141 A10

4 DQ1 50 V SS 96 V CCQ 142 CB6

5 DQS0 51 CB3 97 DQS9 143 V CCQ

6 DQ2 52 BA1 98 DQ6 144 CB7

7V CC 53 DQ32 99 DQ7 145 V SS 8D Q 3 5 4 V CCQ 100 V SS 146 DQ36

9 NC 55 DQ33 101 NC 147 DQ37

10 RESET# 56 DQS4 102 NC 148 V CC

11 V SS 57 DQ34 103 NC 149 DQS13

12 DQ8 58 V SS 104 V CCQ 150 DQ38

13 DQ9 59 BA0 105 DQ12 151 DQ39

14 DQS1 60 DQ35 106 DQ13 152 V SS

15 V CCQ 61 DQ40 107 DQS10 153 DQ44

16 NC 62 V CCQ 108 V CC 154 RAS#

17 NC 63 WE# 109 DQ14 155 DQ45

18 V SS 64 DQ41 110 DQ15 156 V CCQ

19 DQ10 65 CAS# 111 CKE1 157 CS0#

20 DQ11 66 V SS 112 V CCQ 158 CS1#

21 CKE0 67 DQS5 113 NC 159 DQS14

CCQ 68 DQ42 114 DQ20 160 V SS

23 DQ16 69 DQ43 115 A12 161 DQ46

24 DQ17 70 V

25 DQS2 71 NC 117 DQ21 163 NC

SS 72 DQ48 118 A11 164 V CCQ

27 A9 73 DQ49 119 DQS11 165 DQ52

28 DQ18 74 V

29 A7 75 NC 121 DQ22 167 A13

31 DQ19 77 V CCQ 123 DQ23 169 DQS15

32 A5 78 DQS6 124 V SS 170 DQ54

33 DQ24 79 DQ50 125 A6 171 DQ55

SS 80 DQ51 126 DQ28 172 V CCQ

35 DQ25 81 V SS 127 DQ29 173 NC

36 DQS3 82 V CCID 128 V CCQ 174 DQ60

37 A4 83 DQ56 129 DQS12 175 DQ61

38 V CC 84 DQ57 130 A3 176 V SS

39 DQ26 85 V CC 131 DQ30 177 DQS16

40 DQ27 86 DQS7 132 V SS 178 DQ62

41 A2 87 DQ58 133 DQ31 179 DQ63

42 V SS 88 DQ59 134 CB4 180 V CCQ

43 A1 89 V SS 135 CB5 181 SA0

44 CB0 90 NC 136 V CCQ 182 SA1

45 CB1 91 SDA 137 CK0 183 SA2

46 V CC 92 SCL 138 CK0# 184 V CCSPD

A0-A13 Address input (Multiplexed) BA0-BA1 Bank Select Address DQ0-DQ63 Data Input/Output CB0-CB7 Check bits DQS0-DQS17 Data Strobe Input/Output CK0 Clock Input CK0# Clock Input CKE0, CKE1 Clock Enable input CS0#, CS1# Chip Select Input RAS# Row Address Strobe CAS# Column Address Strobe WE# Write Enable V CC Power Supply VCCQ Power Supply for DQS VSS Ground VREF Power Supply for Reference VCCSPD Serial EEPROM Power Supply SDA Serial data I/O SCL Serial clock SA0-SA2 Address in EEPROM V CCID VCC Indentifi cation Flag NC No Connect RESET# Reset Enable PIN NAMES

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com FUNCTIONAL BLOCK DIAGRAM DQS2 DQS1 DQS0 DQS7 DQS6 DQS5 DQS4 DQS3 DQS12 DQ60DQ56 I/O 3 DQ59 DQ58 DQ57 I/O 1 I/O 0 I/O 2 DQ63 DQ62 DQ61 DQ51 DQ50 DQ49 DQ48 DQ43 DQ42 DQ41 DQ40 DQS DMCS# DQS DMCS# DQS DMCS# I/O 1 I/O 0 I/O 3 I/O 2 I/O 1 I/O 0 I/O 3 I/O 2 DQ35 DQ34 DQ33 DQ32 DQ27 DQ26 DQ25 DQ24 DQS DMCS# DQS DMCS# I/O 1 I/O 0 I/O 3 I/O 2 I/O 1 I/O 0 I/O 3 I/O 2 DQS14 DQS15 DQS16 DQ55 DQ54 DQ53 DQ52 DQ47 DQ46 DQ45 DQ44 DQS13 DQ39 DQ38 DQ37 DQ36 DQ31 DQ30 DQ29 DQ28 I/O 3 I/O 2 I/O 0 I/O 1 DM DM DM DM DM I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 DQS DQS DQS I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 DQS DQS DQ2 I/O 1 DQ18 DQ16 DQ17 DQ19 DQ11 DQ10 DQ9 DQ8 DQ3 DQS DMCS# DQS DMCS# I/O 0 I/O 1 I/O 0 I/O 3 I/O 2 I/O 1 I/O 0 I/O 3 I/O 2 DQ1 DQ0 CS# DMDQS I/O 2 I/O 3 DQ6 DQS10 DQS11 DQ7 DQ20 DQ21 DQ22 DQ23 DQ15 DQ14 DQ13 DQ12 DQ1 DQ2 DQS9 DQ5 DQ4 DM DM DMCS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# CS# I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 I/O 0 DQS DQS I/O 3 I/O 2 DQS RCS0# RCS1# I/O 3 I/O 2 DQS DMCS# I/O 0 I/O 1 CS# DMDQS CS# DMDQS CS# DMDQS CS# DMDQS CS# DMDQS CS# DMDQS CS# DMDQS I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 3 I/O 0 I/O 1 I/O 2 I/O 0 I/O 1 I/O 3 I/O 2 I/O 0 I/O 1 I/O 3 DM DM DM DM DM DM DM DM DQS I/O 1 I/O 0 I/O 2 I/O 3 I/O 2 I/O 1 I/O 0 DQS I/O 3 DQS I/O 1 I/O 0 I/O 3 I/O 2 DQS I/O 1 I/O 0 I/O 3 I/O 2 DQS I/O 3 I/O 1 I/O 0 I/O 2 I/O 1 I/O 0 I/O 3 I/O 2 DQS DQS I/O 1 I/O 0 I/O 3 I/O 2 DQS I/O 2 I/O 3 I/O 1 I/O 0 VSS DQS8 CS# DMDQS I/O 2 I/O 0 I/O 1 CB1 CB2 CB3 I/O 3CB0 I/O 3 I/O 1 I/O 0 I/O 2 DQS DMCS# DQS17 I/O 3 I/O 2 I/O 0 I/O 1 DQSDQS DM I/O 1 I/O 0 I/O 2 I/O 3 CB5 CB6 CB7 CB4 DM SA0 WP SCL A1 A2 SA1 SA2 SDA SERIAL PD PLL CK0 CK0# REGISTER SDRAM RCS0# RRAS# RA0-RA13 RCKE0 RCAS# RBA0,RBA1 RCS1# RESET# PCK# PCK A0-A13 WE# CAS# RAS# BA0,BA1 CS0# CKE0 R E I G E R T S RCKE1 RWE# BA0,BA1: DDR SDRAMs A0-A13: DDR SDRAMs RAS#: DDR SDRAMs CAS#: DDR SDRAMs WE#: DDR SDRAMs CKE: DDR SDRAMs CKE: DDR SDRAMs CS1# CKE1 VSS VREF VCC/VCCQ VCCSPD DDR SDRAM SPD DDR SDRAM DDR SDRAM NOTES: 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/S relationships must be maintained as shown. Note: All resistor values are 22 ohms unless otherwise specifi ed.

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Voltage on any pin relative to VSS VIN, VOUT -0.5 - 3.6 V Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 - 3.6 V Storage Temperature T STG -55 - +150 °C Power Dissipation P D 27 W Short Circuit Current I 0S 50 mA Note: Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability DC CHARACTERISTICS 0°C ≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V Parameter Symbol Min Max Unit Supply Voltage V CC 2.3 2.7 V Supply Voltage V CCQ 2.3 2.7 V Reference Voltage V REF 1.15 1.35 V Termination Voltage V TT 1.15 1.35 V Input High Voltage V IH VREF + 0.15 V CCQ + 0.3 V Input Low Voltage V IL -0.3 V REF - 0.15 V Output High Voltage V OH VTT + 0.76 — V Output Low Voltage V OL —V TT - 0.76 V CAPACITANCE TA = 25°C, f = 1MHz, VCC = 2.5V ± 0.2V Parameter Symbol Max Unit Input Capacitance (A0-A13) C IN1 6.25 pF Input Capacitance (RAS#, CAS#, WE#) C IN2 6.25 pF Input Capacitance (CKE0) C IN3 6.25 pF Input Capacitance (CK0,CK0#) C IN4 5.5 pF Input Capacitance (CS0#) C IN5 6.25 pF Input Capacitance (DQM0-DQM8) C IN6 13 pF Input Capacitance (BA0-BA1) C IN7 6.25 pF Data input/output capacitance (DQ0-DQ63)(DQS) C OUT 13 pF Data input/output capacitance (CB0-CB7) C OUT 13 pF

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com IDD SPECIFICATIONS AND TEST CONDITIONS Includes DDR SDRAM components only Parameter Symbol Rank 1 Conditions DDR266:@CL=2, 2.5 Max DDR200@CL=2 Max Units Rank 2 Standby State Operating Current I DD0 One device bank; Active - Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. 4680 4230 mA I DD3N Operating Current I DD1 One device bank; Active-Read-Precharge Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); lOUT = 0mA; Address and control inputs changing once per clock cycle. 5310 4860 mA I DD3N Precharge Power- Down Standby Current IDD2P All device banks idle; Power-down mode; tCK = tCK (MIN); CKE = (low) 360 360 rnA I DD2P Idle Standby Current I DD2F CS# = High; All device banks idle; tCK = tCK (MIN); CKE = High; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. 2340 2160 mA I DD2F Active Power-Down Standby Current IDD3P One device bank active; Power-Down mode; t CK (MIN); CKE = (low) 1260 1080 mA I DD3P Active Standby Current I DD3N CS# = High; CKE = High; One device bank; Active-Precharge;tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. 1800 1620 mA I DD3N Operating Current I DD4R Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; t CK = tCK (MIN); lOUT = 0mA. 5760 5220 mA I DD3N Operating Current I DD4W Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; t CK = tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle. 5940 5400 rnA I DD3N Auto Refresh Current I DD5 tRC = tRC (MIN) 7920 7560 mA I DD3N Self Refresh Current I DD6 CKE ≤ 0.2V 324 324 mA I DD6 Operating Current I DD7A Four bank interleaving Reads (BL=4) with auto precharge with tRC=tRC (MIN); tCK=tCK(MIN); Address and control inputs change only during Active Read or Write commands. 11250 10350 mA I DD3N

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com IDD SPECIFICATIONS AND TEST CONDITIONS Includes PLL and register power Parameter Symbol Rank 1 Conditions DDR266:@CL=2, 2.5 Max DDR200@CL=2 Max Units Rank 2 Standby State Operating Current I DD0 One device bank; Active - Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. 5265 4815 mA I DD3N Operating Current I DD1 One device bank; Active-Read-Precharge Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); lOUT = 0mA; Address and control inputs changing once per clock cycle. 5895 5445 mA I DD3N Precharge Power- Down Standby Current IDD2P All device banks idle; Power-down mode; tCK = tCK (MIN); CKE = (low) 360 360 rnA I DD2P Idle Standby Current I DD2F CS# = High; All device banks idle; tCK = tCK (MIN); CKE = High; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. 2650 2470 mA I DD2F Active Power-Down Standby Current IDD3P One device bank active; Power-Down mode; t CK (MIN); CKE = (low) 1260 1080 mA I DD3P Active Standby Current I DD3N CS# = High; CKE = High; One device bank; Active-Precharge;tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. 2110 1930 mA I DD3N Operating Current I DD4R Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; t CK = tCK (MIN); lOUT = 0mA. 6345 5805 mA I DD3N Operating Current I DD4W Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; t CK = tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle. 6525 5985 rnA I DD3N Auto Refresh Current I DD5 tRC = tRC (MIN) 8540 8180 mA I DD3N Self Refresh Current I DD6 CKE ≤ 0.2V 599 599 mA I DD6 Operating Current I DD7A Four bank interleaving Reads (BL=4) with auto precharge with tRC=tRC (MIN); tCK=tCK(MIN); Address and control inputs change only during Active Read or Write commands. 11835 10935 mA I DD3N

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com IDD1 : OPERATING CURRENT: ONE BANK 1. Typical Case: VCC = 2.5V, T = 25°C 2. Worst Case: VCC = 2.7V, T = 10°C 3. Only one bank is accessed with tRC (min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. l OUT = 0mA 4. Timing patterns

• DDR200 (100MHz, CL = 2) : t CK = 10ns, CL2, BL = 4, tRCD = 2*tCK, tRAg = 5*tCK Read: A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst
• DDR266 (133MHz, CL = 2.5) : t CK = 7.5ns, CL = 2.5, BL = 4, tRCD = 3*tCK, tRC = 9*tCK, tRAg = 5*tCK Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst
• DDR266 (133MHz, CL = 2) : t CK = 7.5ns, CL = 2, BL = 4, tRCD = 3*tCK, tRC = 9*tCK, tRAg = 5*tCK Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst IDD7A: OPERATING CURRENT: FOUR BANKS 1. Typical Case: VCC = 2.5V, T = 25°C 2. Worst Case: VCC = 2.7V, T = 10°C 3. Four banks are being interleaved with tRC (min), Burst Mode, Address and Control inputs on NOP edge are not changing. lout = 0mA 4. Timing patterns
• DDR200 (100MHz, CL = 2) : t CK = 10ns, CL2, BL = 4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read: A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst
• DDR266 (133MHz, CL = 2.5) : t CK = 7.5ns, CL = 2.5, BL = 4, tRRD = 3*tCK, tRCD = 3*tCK Read with autoprecharge Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst
• DDR266 (133MHz, CL = 2): t CK = 7.5ns, CL2 = 2, BL = 4, tRRD = 2*tCK, tRCD = 3*tCK Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP A (0-3) = Activate Bank 0-3 R (0-3) = Read Bank 0-3

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS AC Characteristics 262 263/265 202 Parameter Symbol Min Max Min Max Min Max Units Notes Clock cycle time CL=2.5 t CK (2.5) 6 13 7.5 13 8 13 ns 22 CL=2 t CK (2) 7.5 13 7.5/10 13 10 13 ns 22 DQ and DM input hold time relative to DQS t DH 0.45 0.5 0.6 ns 14,17 DQ and DM input setup time relative to DQS t DS 0.45 0.5 0.6 ns 14,17 DQ and DM input pulse width (for each input) t DIPW 1.75 1.75 2 ns 17 DQS input high pulse width t DQSH 0.35 0.35 0.35 t CK DQS input low pulse width t DQSL 0.35 0.35 0.35 t CK DQS-DQ skew, DQS to last DQ valid, per group, per access t DQSQ 0.5 0.5 0.5 ns 13,14 DQS falling edge to CK rising - setup time t DSS 0.2 0.2 0.2 t CK DQS falling edge from CK rising - hold time t DSH 0.2 0.2 0.2 t CK Half clock period t HP tCH, tCL tCH, tCL tCH, tCL ns 18 Data-out high-impedance window from CK, CK# t HZ +0.70 +0.75 +0.8 ns 8,19 Data-out low-impedance window from CK, CK# t LZ -0.70 -0.75 -0.8 ns 8,20 Address and control input hold time (fast slew rate) t IHf 0.75 0.90 1.1 ns 6 Address and control input set-up time (fast slew rate) t ISf 0.75 0.90 1.1 ns 6 Address and control input hold time (slow slew rate) t IHs 0.80 1 1.1 ns 6 Address and control input setup time (slow slew rate) t ISs 0.80 1 1.1 ns 6 Address and control input pulse width (for each input) t IPW 2.2 2.2 2.2 ns LOAD MODE REGISTER command cycle time t MRD 15 15 16 ns DQ-DQS hold, DQS to fi rst DQ to go non-valid, per access t QH tHP-tQHS tHP-tQHS tHP-tQHS ns 13,14 Data hold skew factor t QHS 0.75 0.75 1 ns ACTIVE to PRECHARGE command t RAS 45 120,000 45 120,000 45 120,000 ns 15 ACTIVE to READ with Auto precharge command t RAP 15 20 20 ns ACTIVE to ACTIVE/AUTO REFRESH command period t RC 60 65 70 ns AUTO REFRESH command period t RFC 120 120 120 ns 21

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (continued) AC Characteristics 262 263/265 202 Parameter Symbol Min Max Min Max Min Max Units Notes ACTIVE to READ or WRITE delay t RCD 15 20 20 ns PRECHARGE command period t RP 15 20 20 ns ACTIVE bank a to ACTIVE bank b command t RRD 15 15 15 ns DQS write preamble t WPRE 0.25 0.25 0.25 t CK DQS write preamble setup time t WPRES 0 0 0 ns 10,11 Write recovery time t WR 15 15 15 ns Internal WRITE to READ command delay t WTR 111 t CK Data valid output window NA t QH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns 13 REFRESH to REFRESH command interval t REFC 70.3 70.3 70.3 μs 12 Average periodic refresh interval t REFI 7.8 7.8 7.8 μs 12 Terminating voltage delay to VCC tVTD 000 n s Exit SELF REFRESH to non-READ command t XSNR 75 75 75 ns Exit SELF REFRESH to READ command t XSRD 200 200 200 t CK

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com 11. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be high during this time, depending on t DQSS. 12. The refresh period is 64ms. This equates to an average refresh rate of 7.8125µs. However, an AUTO REFRESH command must be asserted at least once every 70.3µs; burst refreshing or posting by the DRAM controller greater than eight refresh cycles is not allowed. 13. The valid data window is derived by achieving other specifi cations - t HP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycled variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55. 14. Referenced to each output group: x4 = DQS with DQ0-DQ3. 15. R EADs and WRITEs with auto precharge are not allowed to be issued until t RAS (MIN) can be satisfi ed prior to the internal precharge command being issued. 16. JEDEC specifi es CK and CK# input slew rate must be > 1V/ns (2V/ns differentially). 17. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to t DS and tDH for each 100mV/ns reduction in slew rate. If slew rates exceed 4V/ns, functionality is uncertain. 18. t HP min is the lesser of tCL min and tCH min actually applied to the device CK and CK# inputs, collectively during bank active. 19. t HZ (MAX) will prevail over the tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will prevail over tDQSCK (MIN) + PRE (MAX) condition. 20. For slew rates greater than 1V/ns the (LZ) transition will start about 310ps earlier. 21. CKE must be active (High) during the entire time a refresh command is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until t RFC has been satisfi ed. 22. W henever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands). Notes 1. All voltages referenced to V SS 2. Tests for AC timing, I DD, and electrical AC and DC characteristics may be conducted at normal reference / supply voltage levels, but the related specifi cations and device operations are guaranteed for the full voltage range specifi ed. 3. Outputs are measured with equivalent load: OutputOutput (V(VOUTOUT) Reference Reference PointPoint 5050Ω VTTTT 30pF30pF 4. AC timing and I DD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifi cations are guaranteed for the specifi ed AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between V IL(AC) and VIH(AC). 5. The AC and DC input level specifi cations are defi ned in the SSTL_2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [high] level). 6. For slew rates less than 1V/ns and greater than or equal to 0.5V/ns. If the slew rate is less than 0.5V/ns, timing must be derated: t IS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns. t IH has 0ps added, that is, it remains constant. If the slew rate exceeds 4.5V/ns, functionality is uncertain. For 266, slew rates must be greater than or equal to 0.5V/ns. 7. Inputs are not recognized as valid until V REF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.3 x VCCQ is recognized as LOW. 8. t HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specifi c voltage level, but specify when the device output is no longer driving (HZ) and begins driving (LZ). 9. The intent of the “Don’t Care” state after completion of the postamble is the DQS-driven signal should either be HIGH, LOW, or high-Z, and that any signal transition within the input switching region must follow valid input requirements. That is, if DQS transitions HIGH (above V IHDC (MIN) then it must not transition LOW (below VIHDC) prior to tDQSH (MIN). 10. This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround.

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com ORDERING INFORMATION FOR JD3 Part Number Speed CAS Latency t RCD tRP Height* W3EG2256M72ASSR262JD3xG 133MHz/266Mb/s 2 2 2 30.48 (1.20") W3EG2256M72ASSR263JD3xG 133MHz/266Mb/s 2 3 3 30.48 (1.20") W3EG2256M72ASSR265JD3xG 133MHz/266Mb/s 2.5 3 3 30.48 (1.20") W3EG2256M72ASSR202JD3xG 100MHz/200Mb/s 2 2 2 30.48 (1.20") NOTES:

• Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant)
• Vendor specifi c part numbers are used to provide memory components source control. The place holder for this is shown as lo wer case “x” in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualifi ed sourcing options. (M = Micron, S = Samsung & consult factory for others)
• Consult factory for availability of industrial temperature (-40°C to 85°C) option 133.48 (5.255" MAX.) 3.99 (0.157 (2x)) 17.78 (0.700) 10.0 (0.394) 6.36 (0.250) 64.77 (2.550) 1.78 (0.070) 49.53 (1.950) 3.00 (0.118) (4x) 3.99 (0.157) (MIN) 1.27 ± 0.10 (0.050) (± 0.004) 30.48 (1.20 MAX) 6.35 (0.250 MAX) 2.31 (0.091) (2x) 1.27 (0.050 TYP.)6.35 (0.250) 128.95 (5.077") 131.34 (5.171") PACKAGE DIMENSIONS FOR JD3 * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com ORDERING INFORMATION FOR AJD3 Part Number Speed CAS Latency t RCD tRP Height* W3EG2256M72ASSR262AJD3xG 133MHz/266Mb/s 2 2 2 28.70 (1.13") W3EG2256M72ASSR263AJD3xG 133MHz/266Mb/s 2 3 3 28.70 (1.13") W3EG2256M72ASSR265AJD3xG 133MHz/266Mb/s 2.5 3 3 28.70 (1.13") W3EG2256M72ASSR202AJD3xG 100MHz/200Mb/s 2 2 2 28.70 (1.13") NOTES:

• Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant)
• Vendor specifi c part numbers are used to provide memory components source control. The place holder for this is shown as lo wer case “x” in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualifi ed sourcing options. (M = Micron, S = Samsung & consult factory for others)
• Consult factory for availability of industrial temperature (-40°C to 85°C) option 133.48 (5.255" MAX.) 3.99 (0.157 (2x)) 17.78 (0.700) 10.0 (0.394) 6.35 (0.250) 64.77 (2.550) 1.78 (0.070) 49.53 (1.950) 3.00 (0.118) (4x) 3.99 (0.157) (MIN) 1.27 ± 0.10 (0.050) (± 0.004) 28.70 (1.13 MAX) 6.35 (0.250 MAX) 2.31 (0.091) (2x) 1.27 (0.050 TYP.)6.35 (0.250) 128.95 (5.077") 131.34 (5.171") PACKAGE DIMENSIONS FOR AJD3 * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com PART NUMBERING GUIDE W 3 E G 2 256M 72 A S S R xxx JD3 x G WEDC MEMORY DDR GOLD RANKS DEPTH (Dual Rank) BUS WIDTH Stack TSOP 2.5V REGISTERED SPEED (MHz) PACKAGE or AJD3 COMPONENT VENDOR RoHS COMPLIANT

-AJD3 White Electronic Designs November, 04 Rev. 3 PRELIMINARY White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com Document Title 4GB – 2x256Mx72, DDR SDRAM Registered ECC, w/PLL

Revision History

Rev # History Release Date Status Rev 0 Initial Release 5-2-03 Advanced Rev 1 1.1 Package dimension change, status

1.2 Updated CAP and I DD specs

1.3 Removed "ED" from part number

1.4 Moved from Advanced to Preliminary

1.5 Added document title page

Rev 2 2.1 Changed data sheet part number (W3EG72512S-JD3) to new part numbering system.

2.2 Added part numbering guide

Rev 3 3.1 Added Lead-Free and RoHS note

3.2 Added vendor code options

M = Micron S = Samsung 11-04 Preliminary