W30NF20

W30NF20 THINKISEMI | Alldatasheet

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Technical content

Features

R DS(on) (Max 0.085 Ω)@V GS =10V Gate Charge (Typical 95nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested R DS(ON) = 0.085 ohm I D = 32A BV DSS = 200V 2. Drain 3. Source 1. Gate TO-247AC/TO-247S General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-247AC pkg is well suited for adaptor power unit and small power inverter application. Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics V DSS Drain-Source Voltage 200 V I D Drain Current - Continuous (T C = 25°C) 32 A - Continuous (T C = 100°C) 20.3 A I DM Drain Current - Pulsed (Note 1) 128 A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 600 mJ I AR Avalanche Current (Note 1) 32 A E AR Repetitive Avalanche Energy (Note 1) 20.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

5.5 V/ns

P D Power Dissipation (T C = 25°C) 204 W - Derate above 25°C 1.63 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units R θJC Thermal Resistance, Junction-to-Case -- 0.61 °C /W R θCS Thermal Resistance, Case-to-Sink 0.24 -- °C /W R θJA Thermal Resistance, Junction-to-Ambient -- 40 °C /W Symbol Parameter W30NF20 Units

Page 2/7Rev.10T (Note 4) (Note 4, 5) (Note 4, 5) (Note 4)

Electrical Characteristics

T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.88mH, I AS = 32A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.2 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 200 V, V GS = 0 V -- -- 10 µA V DS = 160 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 16 A -- 0.071 0.085 Ω g FS Forward Transconductance V DS = 40 V, I D = 16 A -- 27 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 2600 3400 pF C oss Output Capacitance -- 330 430 pF C rss Reverse Transfer Capacitance -- 75 100 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 100 V, I D = 32 A, R G = 25 Ω -- 30 70 ns t r Turn-On Rise Time -- 240 490 ns t d(off) Turn-Off Delay Time -- 295 600 ns t f Turn-Off Fall Time -- 195 400 ns Q g Total Gate Charge V DS = 160 V, I D = 32 A, V GS = 10 V -- 95 123 nC Q gs Gate-Source Charge -- 13 -- nC Q gd Gate-Drain Charge -- 43 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 32 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 128 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 32 A -- -- 1.5 V t rr Reverse Recovery Time V GS = 0 V, I S = 32 A, dI F / dt = 100 A/µs -- 220 -- ns Q rr Reverse Recovery Charge -- 1.89 -- µC W30NF20

Page 5/7Rev.10T Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms W30NF20

Page 6/7Rev.10T Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS

• dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS
• dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width W30NF20

Page 7/7Rev.10T DIM. mm. inch A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e5 . 4 5 0 . 2 1 4 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S5 . 5 0 0 . 2 1 6 THINKI TO-247AC/TO-247S MECHANICAL DATA W30NF20