W15NK90Z ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor W15NK90Z
- FEATURES
- WithTO-247 packaging
- Withlowgatedrive requirements
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 900 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@Tc=25℃ Tc=100℃ 9.5 A IDM DrainCurrent-SinglePulsed 60 A PD TotalDissipation 350 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.7 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor W15NK90Z ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1.0mA 900 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.15mA 3.0 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=7.5A 400 550 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=900V;VGS=0V;@Tc=25℃ VDS=900V;VGS=0V;Tc=125℃ 50 μA VSDF Diodeforwardvoltage ISD=15A,VGS =0V 1.6 V