W005M DSK | Alldatasheet
Document overview
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Technical content
4.3± 0.5 4.3± 0.5 φ8 .1± 0.55 5.1± 0.55
32.3 MIN
φ0 .8± 0.1 29.5± 0.5
FEATURES
Surge overload rating to 50 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. W02M W04M W06M W08M W10M UNITS Max imum r ec ur rent peak rev er s e v oltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Max imum DC bloc king v oltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T A =25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Operating junction temperature range T J Storage temperature range T STG 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A WOM - 55 ---- + 150 - 55 ---- + 125 I R W005M---W10M A 10.0 Mounting Position: Any I F(AV) 1.5 SILICON BRIDGE RECTIFIERS A W005M W01M 50 100 1.0 1.0 50.0 I FSM Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.01 0.1 1.0 T J =25 TYPICAL DISTRIBUTION .01 1.0 0 40 60 0.1 100 120 14080 T J =25 1 10 100 T J =25 1.0 1.4 1.6 1.2 1000 25 50 75 125 150 8.3ms Single Half Sine Wave T J =125 BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES PEAK FORWARD SURGE CURRENT, AMPERES W005M---W10M AMBIENT T EMPERAT URE, NUMBER OF CYCLES AT 60H Z INSTANTANEOUS FORWARD CURRENT, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INST ANT ANEOUS FORWARD VOLT AGE, VOLT S PERCENT OF RAT ED PEAK REVERSE VOLT AGE AMPERES MICRO AMPERES INSTANTANEOUS REVERSE CURRENT, FIG.1 -- DERATING CUTPUT RECTIFIED CURRENT FIG.2 -- MAXIMUM FORWARD SURGE CURRENT www.diode.kr Diode Semiconductor Korea