VP2410L

VP2410L VISHAY | Alldatasheet

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Document Number: 70211 S-04279—Rev. D, 16-Jun-01 www.vishay.com 11-1 P-Channel 240-V (D-S) MOSFET /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068High-Side Switching /C0068Secondary Breakdown Free: –255 V /C0068Low On-Resistance: 8 /C0087 /C0068Low-Power/Voltage Driven /C0068Excellent Thermal Stability /C0068Ease in Driving Switches /C0068Full-Voltage Operation /C0068Low Offset Voltage /C0068Easily Driven Without Buffer /C0068No High-Temperature “Run-Away” /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Power Supply, Converters /C0068Motor Control /C0068Switches TO-226AA (TO-92) Top View S D G 2 Device Marking Front View “S” VP 2410L xxyy “S” = Siliconix Logo xxyy = Date Code Device Marking Front View “S” = Siliconix Logo xxyy = Date Code /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol Limits Unit Drain-Source Voltage VDS –240 Gate-Source Voltage VGS /C003420 V /C0095 TA= 25/C0095C –0.18 Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID –0.11 A Pulsed Drain Currenta IDM –0.72 TA= 25/C0095C 0.8 Power Dissipation TA= 100/C0095C PD 0.32 W Thermal Resistance, Junction-to-Ambient R thJA 156 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature.

www.vishay.com 11-2 Document Number: 70211 S-04279— Rev. D, 16-Jun-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits Parameter Symbol Test Conditions Min Typa Max Unit Static VGS = 0 V, ID = –5 /C0109A –240 –255 Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 /C0109A –255 VDS = VGS , ID = –1 mA –2.1 V Gate-Threshold Voltage VGS(th) VDS = VGS , ID = –2.5 mA –0.8 –2.2 –2.5 VDS = 0 V, VGS = /C003420 V /C003410 Gate-Body Leakage IGSS TJ = 125/C0095C /C003450 nA VDS = –180 V, VGS = 0 V –1 /C0109Zero Gate Voltage Drain Current IDSS TJ = 125/C0095C –100 /C0109A On-State Drain Currentb ID(on) VDS = –10 V, VGS = –4.5 V –150 –300 mA VGS = –10 V, ID = –0.1 A 6 Drain-Source On-Resistanceb rDS(on) VGS = –4.5 V, ID = –0.1 A 8 10 /C0087 TJ = 125/C0095C 14.5 20 Forward Transconductanceb gfs VDS = –10 V, ID = –0.1 A 125 175 Common Source Output Conductanceb gos VDS = –10 V, ID = –0.05 A 0.125 mS Dynamic Input Capacitance C iss 65 95 Output Capacitance C oss VDS =–25 V, VGS = 0 V f = 1 MHz 25 30 pF Reverse Transfer Capacitance C rss f = 1 MHz 12 15 Switchingc td(on) 7 15 Turn-On Time tr VDD = –25 V, RL = 250 /C0087 /C0094 18 30 ID /C0094 –0.1 A, VGEN = –10 V /C0087 ns td(off) R G = 25 /C0087 45 70 Turn-Off Time tf G 45 60 Notes a. For DESIGN AID ONLY, not subject to production testing. VPDV24 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

Document Number: 70211 S-04279— Rev. D, 16-Jun-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage –500 –500 –400 2.25 2.00 0.50 –80 –100 0 –50 –2.0 –10 –50 –4 –20 –1000 –500 –50 –10 150 VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) ID – Drain Current (mA) VGS = –4 V –3 V –5 V –4.5 V –4 V VGS = –10 V –3.0 V –3.6 V –3.4 V –3.2 V TJ – Junction Temperature (/C0095C) VGS = –10 V ID = –0.2 A –2.8 V –2.6 V –200 –300 –400 VGS = –4.5 V TJ = –55/C0095C 125/C0095C 25/C0095C –300 –200 –100 –2 –3 –4 ID = –0.20 A ID = –0.1 A –8 –12 –16 1.75 1.50 1.25 1.00 0.75 20 70 110 VGS = –4.5 V ID = –0.1 A –400 –300 –200 –100 –60 –40 –20 VDS = –15 V ID – Drain Current (mA) ID – Drain Current (mA) ID – Drain Current (mA) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

www.vishay.com 11-4 Document Number: 70211 S-04279— Rev. D, 16-Jun-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Load Condition Effects on Switching 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 10.1 10 K 0.01 –12 –10 –0.01 –10 0.1 100 150 125 1000 –1000 –1.20 –50 500 –3.6 –10 –100 –10 t1 – Square Wave Pulse Duration (sec) ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) 125/C0095C –55/C0095C Q g – Total Gate Charge (pC) C rss C oss C iss VGS = 0 V f = 1 MHz TJ = 150/C0095C 25/C0095C 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM –0.1 –192 V VDS = –120 V ID = –100 mA 200 300 400 VDD = –25 V R G = 25 /C0087 VGS = 0 to –10 V td(on) td(off) tr tf 0.01 100 –20 –30 –40 10 100 1 K ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns)