VP2020L

VP2020L VISHAY | Alldatasheet

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VP2020L, BSS92 Vishay Siliconix Document Number: 70210 S-04279—Rev. E, 16-Jun-01 www.vishay.com 11-1 P-Channel 200-V (D-S) MOSFETs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068High-Side Switching /C0068Secondary Breakdown Free: –220 V /C0068Low On-Resistance: 11.5 /C0087 /C0068Low-Power/Voltage Driven /C0068Excellent Thermal Stability /C0068Ease in Driving Switches /C0068Full-Voltage Operation /C0068Low Offset Voltage /C0068Easily Driven Without Buffer /C0068No High-Temperature “Run-Away” /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Power Supply, Converters /C0068Motor Control /C0068Switches “S” VP 2020L xxyy TO-92-18CD (TO-18 Lead Form) Top View S G D TO-226AA (TO-92) Top View S D G 2 BSS92VP2020L Device Marking Front View “S” = Siliconix Logo xxyy = Date Code “S” = Siliconix Logo xxyy = Date Code Device Marking Front View “S” BS S92 xxyy “S” = Siliconix Logo xxyy = Date Code Device Marking Front View /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol VP2020L BSS92 Unit Drain-Source Voltage VDS –200 –200 Gate-Source Voltage VGS /C003420 /C003420 V /C0095 TA= 25/C0095C –0.12 –0.15 Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID –0.08 –0.09 A Pulsed Drain Currenta IDM –0.48 –0.6 TA= 25/C0095C 0.8 1.0 Power Dissipation TA= 100/C0095C PD 0.32 0.4 W Thermal Resistance, Junction-to-Ambient R thJA 156 125 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature.

VP2020L, BSS92 Vishay Siliconix www.vishay.com 11-2 Document Number: 70210 S-04279— Rev. E, 16-Jun-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits VP2020L BSS92 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Drain-Source VGS = 0 V, ID = –10 /C0109A –220Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 /C0109A –220 –200 V VDS = 0 V, VGS = /C003420 V /C003410 /C0034100 Gate-Body Leakage IGSS TJ = 125/C0095C /C003450 nA VDS = 0.8 x V(BR)DSS , VGS = 0 V –1 TJ = 125/C0095C –100 Zero Gate Voltage Drain Current IDSS VDS = –200 V, VGS = 0 V –60 /C0109ADrain Current DSS TJ = 125/C0095C –200 /C0109 VDS = –60 V, VGS = 0 V –0.2 On-State Drain Currentb ID(on) VDS = –10 V, VGS = –4.5 V –250 –100 mA VGS = –10 V, ID = –0.1 A 11.5 20 VGS = –4.5 V, ID = –0.1 A 15 20 Drain-Source On-Resistanceb rDS(on) TJ = 125/C0095C 28 40 /C0087On-Resistanceb DS(on) VGS = –4.5 V, ID = –0.05 A 15 TJ = 125/C0095C 28 Forward VDS = –10 V, ID = –0.1 A 170 100Forward Transconductanceb gfs VDS = –25 V, ID = –0.1 A 170 60 mS Diode Forward Voltage VSD IS = –0.3 A, VGS = 0 V –0.9 –1.2 V Dynamic Input Capacitance C iss 30 70 130 Output Capacitance C oss VDS = –25 V, VGS = 0 V f = 1 MHz 10 20 30 pF Reverse Transfer Capacitance C rss f = 1 MHz 3 10 15 Switchingc td(on) 6 10 Turn-On Time tr VDD = –25 V, RL = 250 /C0087 /C0094 8 15 ID /C0094 –0.1 A, VGEN = –10 V /C0087 ns td(off) D GEN R G = 25 /C0087 18 30 Turn-Off Time tf R G = 25 /C0087 17 25 Notes a. For DESIGN AID ONLY, not subject to production testing. VPDQ20 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

VP2020L, BSS92 Vishay Siliconix Document Number: 70210 S-04279— Rev. E, 16-Jun-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 –100 –80 –60 0 –1 –5 –40 –20 –2 –3 –4 –500 –400 –300 –200 –100 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) VGS = –10 V –5 V –6 V –55/C0095C TJ = 125/C0095C VDS = –15 V –0.02 A ID = –0.1 A TJ – Junction Temperature (/C0095C) –4.5 V –4 V –3 V –100 –80 –60 –40 –20 VGS = –4 V –3.6 V –3 V –2 V VGS – Gate-Source Voltage (V) –0.05 A 0 –50 –250 –100 –150 –200 VGS = –4.5 V –10 V 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 VGS = –4.5 V ID = –0.1 A 25/C0095C ID – Drain Current (mA) ID – Drain Current (mA) ID – Drain Current (mA) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized)

VP2020L, BSS92 Vishay Siliconix www.vishay.com 11-4 Document Number: 70210 S-04279— Rev. E, 16-Jun-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1.0 100 10 1 K –10 –100 –1000 100 120 100 0 –10 –50 –20 –30 –40 Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) –55/C0095C Q g – Total Gate Charge (nC) C rss C oss C iss VDD = –25 V R G = 25 /C0087 VGS = 0 to –10 V td(on) td(off) tr tf TJ = 150/C0095C 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM –12 –10 0 0.5 2.5 1.0 1.5 2.0 ID = –0.1 A VDS = –100 V –160 V –10.0 –1.0 –0.01 0 –3.5 –0.1 –1.0 –2.0 –3.0 VDS = –5 V 125/C0095C 25/C0095C VGS = 0 V f = 1 MHz ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) t – Switching Time (ns)