VP0808B ETC2 | Alldatasheet
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VP0808B/L/M, VP1008B/L/M Siliconix P-37655—Rev. B, 25-Jul-94 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V (BR)DSS Min (V) rDS(on) Max () V GS(th) (V) ID (A) VP0808B 5 @ V GS = –10 V –2 to –4.5 –0.88 VP0808L –80 5 @ V GS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ V GS = –10 V –2 to –4.5 –0.31 VP1008B 5 @ V GS = –10 V –2 to –4.5 –0.79 VP1008L –100 5 @ V GS = –10 V –2 to –4.5 –0.28 VP1008M 5 @ V GS = –10 V –2 to –4.5 –0.31 Features Benefits Applications High-Side Switching Low On-Resistance: 2.5 Moderate Threshold: –3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF Ease in Driving Switches Low Offset (Error) V oltage Low-V oltage Operation High-Speed Switching Easily Driven Without Buffer Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply, Converter Circuits Motor Control 2 3 TO-205AD (TO-39) (Case Drain) Top View DG S 1 TO-226AA (TO-92) Top View S D G 2 TO-237 (Tab Drain) Top View S D G 2 VP0808B VP1008B VP0808L VP1008L VP0808M VP1008M Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol VP0808B b VP0808L VP0808M VP1008B b VP1008L VP1008M Unit Drain-Source V oltage V DS –80 –80 –80 –100 –100 –100 V Gate-Source V oltage V GS 20 30 30 20 30 30 V Continuous Drain Current= ID Pulsed Drain Currenta IDM –3 –3 –3 –3 –3 –3 Power Dissipation PD 6.25 0.8 1 6.25 0.8 1 Maximum Junction-to-Ambient R thJA 156 125 156 125 C/WMaximum Junction-to-Case R thJC 20 20 C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70218.
VP0808B/L/M, VP1008B/L/M
2 Siliconix
P-37655—Rev. B, 25-Jul-94 Specificationsa Limits VP0808B/L/M VP1008B/L/M Parameter Symbol Test Conditions Typ b Min Max Min Max Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS = 0 V , ID = –10 /C0109A –110 –80 –100 V Gate-Threshold V oltage V GS(th) V DS = VGS , ID = –1 mA –3.4 –2 –4.5 –2 –4.5 V Gate Body Leakage IGSS V DS = 0 V , VGS = 20 V 100 100 nAGate-Body Leakage IGSS TJ = 125/C0095C 500 500 nA V DS = –80 V , VGS = 0 V –10 Zero Gate V oltage Drain Current IDSS TJ = 125/C0095C –500 /C0109AZero Gate V oltage Drain Current IDSS V DS = –100 V , VGS = 0 V –10 /C0109A TJ = 125/C0095C –500 On-State Drain Currentc ID(on) V DS = –15 V , VGS = –10 V –2 –1.1 –1.1 A Drain Source On Resistancec rDS( ) V GS = –10 V , ID = –1 A 2.5 5 5 Drain-Source On -Resistancec rDS(on) TJ = 125/C0095C 4.4 8 8 Forward Transconductancec gfs V DS = –10 V , ID = –0.5 A 325 200 200 Common Source Output Conductancec gos V DS = –7.5 V , ID = –0.1 A 0.45 mS Dynamic Input Capacitance C iss V 25 V V 0V 75 150 150 Output Capacitance C oss V DS = –25 V , VGS = 0 V f = 1 MHz 40 60 60 pF Reverse Transfer Capacitance C rss 18 25 25 Switchingd Turn On Time td(on) 11 15 15 Turn-On Time tr /C0086/C0068/C0068/C0061–25 /C0086/C0044 /C0082/C0076/C0061/C0052 /C0055 /C0073/C0068/C0094–05 /C0065/C0086/C0071/C0069/C0078/C0061/C0045/C0049/C0048 /C0086 30 40 40 ns Turn-Off Time td(off) /C0073/C0068/C0094–0.5 /C0065/C0044/C0086/C0071/C0069/C0078/C0061 /C0045/C0049/C0048 /C0086 /C0082/C0071/C0061/C0050 /C0053 20 30 30 ns Turn-Off Time tf 20 30 30 Notes a. T A = 25/C0095C unless otherwise noted. VPDV10 b. For DESIGN AID ONLY , not subject to production testing. c. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. d. Switching time is essentially independent of operating temperature.
VP0808B/L/M, VP1008B/L/M Siliconix P-37655—Rev. B, 25-Jul-94 Typical Characteristics (25/C0095C Unless Otherwise Noted) –20 –16 –12 –3.8 V –3.6 V –3.4 V –3.2 V Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage V GS – Gate-Source V oltage (V) V GS – Gate-Source V oltage (V) – Drain Current (A)ID – Drain Current (mA)ID – Drain Current (A)ID – On-Resistance (rDS(on) V DS – Drain-to-Source V oltage (V) V DS – Drain-to-Source V oltage (V) ID – Drain Current (A) V GS = –10 V TJ = 25/C0095C TJ = 25/C0095C TJ – Junction Temperature (/C0095C) rDS(on) – Drain-Source On-Resistance (Normalized) V GS = –4.0 V –2.0 –1.6 –1.2 –0.8 –0.4 –9 V –8 V –7 V –6 V –5 V –4 V –0.5 –0.4 –0.3 0 –2 –10 –0.2 –0.1 –4 –6 –8 125/C0095C TJ = –55/C0095C 0 –0.5 –3.0 ID = 0.1 A 0.5 A 1.0 A TJ = 25/C0095C 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 V GS = –10 V ID = 0.5 A V DS = –10 V V GS = –10 V 25/C0095C rDS(on) – Drain-Source On-Resistance (/C0041 /C0041
VP0808B/L/M, VP1008B/L/M
4 Siliconix
P-37655—Rev. B, 25-Jul-94 Typical Characteristics (25/C0095C Unless Otherwise Noted) –15.0 –12.5 –10.0 0 100 500 –7.5 –5.0 200 300 400 –2.5 –80 V 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K 10 50 100 100 200 160 120 0 –10 –50 –20 –30 –40 –10 –0.01 –1.0 –1.5 –4.5 –0.1 Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Drive Resistance Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) V DS – Drain-to-Source V oltage (V)V GS – Gate-to-Source V oltage (V) –55/C0095C Q g – Total Gate Charge (pC) 125/C0095C – Drain Current (mA)ID C – Capacitance (pF) – Gate-to-Source V oltage (V)V GS t – Switching Time (ns) C rss C oss C iss V GS = 0 V f = 1 MHz ID = –0.5 A V DS = –50 V V DD = –25 V R L = 50 V GS = 0 to –10 V ID = –500 mA td(on) td(off) tr tf TJ = 150/C0095C 25/C0095C 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM V DS = –5 V R G – Gate Resistance ()