VP0808 ETC | Alldatasheet

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TOPAZ SEMICONDUCTOR OSE D Pf a0ssee_ oooLie o i a . Ne..Owe T-29-25 _ gE OZAV Zs VP0808, VPI003 SEMICONDUCTOR ; oe eee eee P-CHANNEL ENHANGEMENT-MODE D-MiOS POWER FETs

ORDERING INFORMATION

[Description 80, 6.0 ohm: FEATURES APPLICATIONS I Gate Stand-off Voltage, +:40V min. 1 Motor Controls IB Low Output and Transfer Capacitances Logic interfaces

1 N-Channel Complements Available ™@ Pulse Amplifiers

ABSOLUTE MAXIMUM RATINGS (T- = +25°C unless otherwise noted) Drain-Source Voltage ‘Maximum Power Dissipation VPIOOB ...eeeeeeeeeeeeeeeeeeeeeereeeeees “1OOV To=+100°C To=+25°C Drain-Gate Voltage (Res = 1M) TO-287 PKG. veeseeseeee 0,6W 43W VPIO0B ...eeeeeeeeeeeeeeeeeeeeeeeeeeeees 10OV Linear Derating Factor VPOBOB ...eeeeeeeseeeeeeeeeeesesteeeeees “GOV Junction Junction Continuous Drain Current (mw/c) — (mw/?C) Te=+100°C To=+25°C TO-92 PKQ. weeeeeereees 5.93 24 TO-02 Pkg. ..seceeeeeee IGA ~21A TO-287 PKQ. seseesseese 80 34 TO-287 Pkg, ..eceeeeeee =21A -33A Operating Junction and Storage Lead Temperature (1/16” from mounting PIN CONFIGURATIONS CHIP CONFIGURATION TO-226AA 10-237 (10-92) DRAIN Y oaTe wd SOURCE sao

8 GD,TAB

See Package 5 See Package 7 Dimensions: .054 » .051 020 in Drain is backside contact OEE U UEEEIEEEEEEEEEEEEEEEnT 3-156 0-88-6

TOPAZ SEMICONDUCTOR OSE D Psoss22e O001113 2 | SEMICONDUCTOR VP0808, VP1008 facta ELECTRICAL CHARACTERISTICS (Te = +25°C unless otherwise noted) . P1008 ‘ ERI: [+] CHARACTERISTIC Fara eT TE ON TEST CONDITIONS Drain-Source [1] Teves Brntsowvonge |] | [ol [| v [iensanveene Gate-Source P| [rm site [ee] [|=] [=| [aati 3] | toss Gate Body [ff -t00 | 100 | Vos = -30V, Vos = 0 [ra] [et teakage Curent [00 [Tio | [S| + ee Vos = -80V [| LS] al i... Drain-Sourceorr [| [-soof | T | Vos =0 Te= +125°6 [7} Tt] "°° Leakage Current re ee ee ee bee La}! a a Vos = 0 To= 125°C [9] C [Tees ON Drain Current” [ty [aa [TAT Vos = -25V, Vas = 10 fe) [ome tease |e] 0] [el s2 fv Joomamsna [44] Drain-Source” [fas [so [ [45 [50 | Vos =10V | Tosten [2] ONResistence [Teo [|| 80 | Io=-1.08 fs] [a eemegaecsy [m= [ow] [ame [ae] [oe [varannaansa noe o Input Capacitance: Common-Source Vos = -25V, Vas = 0 | Cre Reverse Transfer f2 MHz “ Capacitance Common-Source Jo Sepugadiane | [| o | | | 2 | Turn-ON SE [18] [% Rise Time a a ee Noon oN eam TUn-OFF ire Delay Time Vatew = -10V [20] [uw Faittime Ts TT | [21] | Some E+ fe tt [22 | Source Current [-s3 | [ f-as 0-237 Pkg. f=]o|m Shoo | | fet | fel" fo jource Current’ [24] | Vs. Source-Drain” [aa aay T= 214, TO-92 Pkg. [25] ForwardVotage [faa [| a2 Td Wes "© [T= 394, 710-27 Pig. Note 1: Pulse Test 80uSec, 1% Duty Cycle ee 3157

TOPAZ SEMICONDUCTOR OSE D ff 0as2e_ ooo1114 4 Bf FoEAZ_ ‘vpos0s, vp1008 aemconoucion NP OBOBL PHONE SWITCHING TIME TEST CIRCUIT TEST WAVEFORMS. : Yoo . - ° ox " Li Vin ox f Your Veto) aon tor —+| sie eal ¥e INPUT PULSE =0Y — oy “| Ye Voo 2 saupLina osciLLoscore iota OSCILLOSCOPE = Sin <20vF TYPICAL PERFORMANCE CHARACTERISTICS (Te = +25°C unless otherwise specified) DRAIN-SOURCE ON RESISTANCE q GATE-SOURCE VOLTAGE ON VOLTAGE CHARACTERISTICS Lt! LTT LILLE i ee aaa PCE eee BX |_| PITT A i Nail pL eH i EEECr RE Ross i TET T TTT Hee ° 24S 12-18 © 20 -40 80 80-10-12 8 Yop-eATE ance VOLTA vat "nee nan . FORWARD TRANSCONDUCTANCE CAPACITANCES wwe ON DRAIN CURRENT ne DRAIN-SOURGE VOLTAGE . PTT} et ° He -+-H HoeH cot ET WIZ fm LTT tet | ‘e +E 4 TEE TT TT I iF “RECEEES fi {Sia a . Nees] Ip—Drain Curent—(Ampay os rin sower Vet = Wein) ee 3-158