VP0535N3 ETC | Alldatasheet
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Technical content
TELEDYNE COMPONENTS es— D M@ 4917602 GOUL4S8S 9 mm VP0535, VP0540 pre heme ner en A) D-MOS FETs
ORDERING INFORMATION
HM Gate Stand-off Voltage, +40V min. 1 Motor Controls Low Output and Transfer Capacitances Logic Interfaces N-Channel Complements Available ™ Pulse Amplifiers @ High Drain-Source Breakdown Level Translators ABSOLUTE MAXIMUM RATINGS (r, = 425°C unless otherwise noted) Drain-Source Voltage Maximum Power Dissipation VPO5SE ose ese eceeeeceeeeee eee e eee e es AB5OV To=+100°C = T, = 425°C Drain-Gate Voltage (Figg = 1MQ) Linear Derating Factor VPO5SE sees eeeeeeeee teen seen eee n es AQ50V Junction Junction VPOS4O ss eeeeeseeeeeesuereren ee ees ss 7400 to Ambient toCase Gate-Source Voltage 240V (mwrc) (mwrc) ToH+100°C Ty =-25°C Operating Junction and Storage PIN CONFIGURATION CHIP CONFIGURATION TO-226A (TO-92) Drain 4 q Gate _ y G Source sao See Package 5 Dimensions: 0.054 x 0.051 x 0.020 inches Drain is backside contact 3462 0-98-6
4286 E~11
TELEDYNE COMPONENTS 26— D M@@ 34917602 OOOK4St O mm SEMICONDUCTOR VP0535, VP0540 a ~ ELECTRICAL CHARACTERISTICS ((r, = +25°C unless otherwise noted) © Lal cucrnares fare Te ae | wor | rereowonos | "Pe sec TT ee Breakdown Voltage LE] fm asst LTT PEL | Threshokd Voltage I,e-1.0mA | 3] aereret -—-—He + + GH ee | 4] LeakageCurent [| oo Toss Drain-Source Vog="350V Cle. omaes | TTT TTP Lee] “Current ~500 Voe==280V | Tq=#125°C le Leet tT fe E < Vos=-4000 ME LT tT ere) ey | : Veg 0 H f= ome ae ee | ea ee . [39 oe [7] Fram DaSoucagy [|e [oof || | _ fel ONRessance [7 [|_| 78] _170_| al | Preret eres ee Fd . [14] a p=-S0mA A]. merece || YELL eee | = __ Forward Transcond. fe tkH2 P Eee CO InputCapacitance te 1MHz ~ Ti Te, ‘Common-Source . 12)” Reverse Transfer
3 Capacitance
[39] [gq Twn-oNowayting| [|| —_|-_[_] Vara es 2) A R.=1000 [at] [ay Tum OFFDetayTing Ts Ry=512 : “Pea patina io] Voges =-10V Pf. sven [| [ [* [| .__ Source Current «Gamay | | . Currant!) LM sews | ["] | Tey Pee Forward Voltag . Note 1: Pulse Test 80uSe0, 1% Duty Cycle 3453 4287 £-12
————S TELEDYNE COMPONENTS eé6— D mm 4917602 OOOb4s? 2 mm a T-29-25 _—_ . TOPAZ VP0535, VP0540 SEMICONDUCTOR ee SWITCHING TIMES TEST CIRCUIT TEST WAVEFORMS Input Pulse Yoo t<0.5nSEC Pulse Width - 100nSEC Sampling Oscilloscope PL y, ov 10% : 1,<0.36nSEC Your moey 10% R,>1Ma lon) C,<2.0pF [been | tone : Vg ° ton tran . 810 Rg t t o— ‘acorn Vout 0% . Yoo 20% , OSCILLOSCOPE = TYPICAL PERFORMANCE CHARACTERISTICS (7, = +25°C unless otherwise noted) - ON RESISTANCE ON RESISTANCE no GATE-SOURCE VOLTAGE GATE-SOURGE VOLTAGE —— -—— es | | E a | S 00 a So} | | | T PEE Ere oS sof msen re | TTT TT asim | | | ° “et tT Tt “rt tT . 10 - 10 . : 0 2 4 6 8 10 0 2 4 6 38 10 . . Vo ~ Gate-Source Voltage (Volts) Voy ~ Gate-Source Voltage (Volts) 3484
4288 E-13
TELEDYNE COMPONENTS 26— D MM 8917402 coob4ea 4 = ea T-29-25 —— ToRAZ VP0535, VP0540 TYPICAL PERFORMANCE CHARACTERISTICS (r, = +25°C unless otherwise noted) ON DRAIN CURRENT DRAIN-SOURCE OFF LEAKAGE CURRENT
40 GATE-SOURCE VOLTAGE CASE TEMPERATURE
(eS SS | BS ee fe i: Ar Ha woe det ET Ld 0 2 4 6 8 10 +5 +250 445 465485 410541254145 Vou * Gate Source Voltage (Volts) T.- Case Temperature (°C) . . . Gave-sounce THRESHOLD VOLTAGE FORWARD TRANSCONDUCTANCE ; m TEMPERATURE = ON DRAIN CURRENT ey a ee | | [| Lt yy 40 g 150 ———— + Oe ee ee Pot | TT TT Pay ; at ttt | ey #ot || | [Tf pof/f tt te a Pitty ° EET ET . +S 425 5 4650 4854105 #125 +145 0 50 = -100 -150 -200 250-300-350 . T, - Case Temperature (°C) {, - Drain Current (mA) Do. CSU UU ES . 3-165