VP0300L

VP0300L VISHAY | Alldatasheet

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VP0300L/LS, VQ2001J/P Vishay Siliconix Document Number: 70217 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 P-Channel 30-V (D-S) MOSFETs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 VQ2001J –30 2 @ VGS = –12 V –2 to –4.5 –0.6 VQ2001P 2 @ VGS = –12 V –2 to –4.5 –0.6 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068High-Side Switching /C0068Low On-Resistance: 1.5 /C0087 /C0068Moderate Threshold: –3.1 V /C0068Fast Switching Speed: 17 ns /C0068Low Input Capacitance: 60 pF /C0068Ease in Driving Switches /C0068Low Offset (Error) Voltage /C0068Low-Voltage Operation /C0068High-Speed Switching /C0068Easily Driven Without Buffer /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Power Supply, Converter Circuits /C0068Motor Control TO-226AA (TO-92) Top View S D G TO-92S (Copper Lead Frame) Top View S D G Plastic: VQ2001J Sidebraze: VQ2001P VP0300L VP0300LS Top View Dual-In-Line D 1 D 4 S1 S4 G 1 G 4 NC NC G 2 G 3 D 2 D 3 P P P P For device marking, see the last page of this data sheet. /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 VQ2001J/P Parameter Symbol VP0300L VP0300LS Single Total Quad Unit Drain-Source Voltage VDS –30 –30 –30 –30 Gate-Source Voltage VGS /C003420 /C003420 /C003420 /C003420 V Continuous Drain Current TA= 25/C0095C –0.32 –0.5 –0.6 –0.6Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C Pulsed Drain Currenta IDM –2.4 –3 –2 –2 TA= 25/C0095C 0.8 0.9 1.3 2 Power Dissipation TA= 100/C0095C PD 0.32 0.4 0.52 0.8 W Thermal Resistance, Junction-to-Ambient R thJA 156 139 96 62.5 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804.

VP0300L/LS, VQ2001J/P Vishay Siliconix www.vishay.com 11-2 Document Number: 70217 S-04279— Rev. E, 16-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits VP0300L/LS VQ2001J/P Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 /C0109A –55 –30 –30 Gate-Threshold Voltage VGS(th) VDS = VGS , ID = –1 mA –3.1 –2 –4.5 –2 –4.5 V VDS = 0 V, VGS = /C003416 V /C0034100 Gate-Body Leakage IGSS TJ = 125/C0095C /C0034500 nA VDS = 0 V, VGS = /C003420 V /C0034100 VDS = –24 V, VGS = 0 V –10 Zero Gate Voltage Drain Current IDSS TJ = 125/C0095C –500 –500 /C0109A VDS = –30 V, VGS = 0 V –10 On-State Drain Currentb ID(on) VDS = –10 V, VGS = –12 V –2.8 –1.5 –1.5 A b VGS = –12 V, ID = –1 A 1.5 2.5 2 /C0087Drain-Source On-Resistanceb rDS(on) TJ = 125/C0095C 2.6 3.6 3.6 /C0087 Forward Transconductanceb gfs VDS = –10 V, ID = –0.5 A 370 200 200 Common Source Output Conductanceb gos VDS = –7.5 V, ID = –0.05 A 0.25 mS Dynamic Input Capacitance C iss 60 150 150 Output Capacitance C oss VDS = –15 V, VGS = 0 V f = 1 MHz 40 100 100 pF Reverse Transfer Capacitance C rss f = 1 MHz 10 60 60 Switchingc Turn-On Time tON VDD = –25 V, RL = 23 /C0087 /C0094 19 30 Turn-Off Time tOFF ID /C0094 –1 A, VGEN = –10 V R G = 25 /C0087 17 30 Turn-On Time tON VDD =–15 V, RL = 23 /C0087 /C0094 19 30 ns Turn-Off Time tOFF ID /C0094 –0.6 A, VGEN = –10 V R G = 25 /C0087 16 30 Notes a. For DESIGN AID ONLY, not subject to production testing. VPEA03 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

VP0300L/LS, VQ2001J/P Vishay Siliconix Document Number: 70217 S-04279— Rev. E, 16-Jul-01 www.vishay.com 11-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 –2.0 –1.6 –1.2 –0.8 –0.4 Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS = –10 V –5 V –8 V –7 V –6 V VGS – Gate-to-Source Voltage (V) –1000 –800 –600 –400 –200 TJ = –55/C0095C 25/C0095C 125/C0095C –4 V –9 V Source-Drain Diode Forward Voltage –10 K –1 K –100 –10 VSD – Source-to-Drain Voltage (V) 0.75 0.90 1.05 1.20 1.35 1.50 1.65 –50 –25 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperature VGS = –4.5 V ID = –0.5 A TJ – Junction Temperature (_C) VGS = –10 V ID = –0.1 A 0 1000 2000 3000 4000 5000 Gate Charge Q g – Total Gate Charge (pC)VDS – Drain-to-Source Voltage (V) Capacitance 175 150 125 100 C rss C oss C iss VDS = –15 V ID = –1 A VDS = –24 V ID = –1 A –18 –15 –12 VGS = 0 V f = 1 MHz –0.50 TJ = 25/C0095C TJ = 150/C0095C ID – Drain Current (A) ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) rDS(on) – On-Resistance ( Ω ) (Normalized) IS – Source Current (A)

VP0300L/LS, VQ2001J/P Vishay Siliconix www.vishay.com 11-4 Document Number: 70217 S-04279— Rev. E, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 3.0 2.5 2.0 1.5 1.0 On-Resistance vs. Gate-to-Source Voltage VGS – Gate-to-Source Voltage (V) ID = –0.5 A ID = –0.2 A Threshold Region –10 K –1 K VGS – Gate-Source Voltage (V) VDS = –10 V 25/C0095C –55/C0095C 100/C0095C TJ = 150/C0095C –100 –10 rDS(on) – On-Resistance ( Ω ) ID – Drain Current (µA) /C0084/C0072/C0069/C0082/C0077/C0065/C0076/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only) Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM /C0068/C0069/C0086/C0073/C0067/C0069/C0032/C0077/C0065/C0082/C0075/C0073/C0078/C0071/C0083 VP0300L “S” VP 0300L xxyy Front View: VP0300LS “S” VP 0300LS xxyy “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ2001J VQ2001J “S”f//xxyy Top View: VP0300LS VQ2001P “S”f//xxyy