VNS1NV04D

“Omnifet II”: fully autoprotected Power MOSFET

Document overview

• Manufacturer or author: STMICROELECTRONICS
• PDF pages: 14

Technical content

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET /c110 LINEAR CURRENT LIMITATION /c110 THERMAL SHUT DOWN /c110 SHORT CIRCUIT PROTECTION /c110 INTEGRATED CLAMP /c110 LOW CURRENT DRAWN FROM INPUT PIN /c110 DIAGNOSTIC FEEDBACK THROUGH INPUT PIN /c110 ESD PROTECTION /c110 DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) /c110 COMPATIBLE WITH STANDARD POWER MOSFET

DESCRIPTION

The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. TYPE R DS(on) Ilim Vclamp VNS1NV04D 250 m Ω (*) 1.7 A (*) 40 V (*) SO-8 BLOCK DIAGRAM SOURCE2 OVERVOLTAGE LINEAR DRAIN1 SOURCE1 CLAMP CURRENT LIMITEROVER TEMPERATURE GATE CONTROL DRAIN2 OVERVOLTAGE CLAMP LINEAR CURRENT LIMITER GATE CONTROL OVER TEMPERATURE INPUT2INPU T1 (*) Per each device DocID7395 Rev 4 Obsolete Product(s) - Obsolete Product(s)

CONNECTION DIAGRAM (TOP VIEW) Symbol Parameter Value Unit VDSn Drain-source Voltage (VINn=0V) Internally Clamped V VINn Input Voltage Internally Clamped V IINn Input Current +/-20 mA R IN MINn Minimum Input Series Impedance 330 Ω IDn Drain Current Internally Limited A IRn Reverse DC Output Current -3 A VESD1 Electrostatic Discharge (R=1.5KΩ , C=100pF) 4000 V VESD2 Electrostatic Discharge on output pins only (R=330Ω , C=150pF) 16500 V Ptot Total Dissipation at Tc=25°C 4 W Tj Operating Junction Temperature Internally limited °C Tc Case Operating Temperature Internally limited °C Tstg Storage Temperature -55 to 150 °C DRAIN 1INPUT 1 SOURCE 2 IIN1 VIN1 INPUT 2 IIN2 SOURCE 1 DRAIN 2 VIN2 ID2 ID1 VDS1 VDS1 R IN1 R IN2 CURRENT AND VOLTAGE CONVENTIONS DRAIN 2 DRAIN 1 DRAIN 2 DRAIN 1 INPUT 2 SOURCE 1 SOURCE 2 INPUT 1 4 5 Obsolete Product(s) - Obsolete Product(s)

(*) When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins of the relative channel. ON Symbol Parameter Value Unit R thj-lead Thermal Resistance Junction-lead (per channel) MAX 30 °C/W R thj-amb Thermal Resistance Junction-ambient MAX 80(*) °C/W Symbol Parameter Test Conditions Min Typ Max Unit VCLAMP Drain-source Clamp Voltage VIN=0V; ID =0.5A 40 45 55 V VCLTH Drain-source Clamp Threshold Voltage VIN=0V; ID =2mA 36 V VINTH Input Threshold Voltage VDS =V IN; ID =1mA 0.5 2.5 V IISS Supply Current from Input Pin VDS =0V; VIN=5V 100 150 µA VINCL Input-Source Clamp Voltage IIN=1mA IIN=-1mA -1.0 6.8 8 -0.3 V V IDSS Zero Input Voltage Drain Current (VIN=0V) VDS =13V; VIN=0V; Tj=25°C VDS =25V; VIN=0V µA µA Symbol Parameter Test Conditions Min Typ Max Unit R DS(on) Static Drain-source On Resistance VIN=5V; ID =0.5A; Tj = 25°C VIN=5V; ID =0.5A 250 500 m Ω m Ω ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified) OFF (Per each device) Obsolete Product(s) - Obsolete Product(s)

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified) DYNAMIC SWITCHING SOURCE DRAIN DIODE PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% Symbol Parameter Test Conditions Min Typ Max Unit gfs (*) Forward Transconductance VDD =13V; ID =0.5A 2 S C OSS Output Capacitance V DS =13V; f=1MHz; VIN=0V 90 pF Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time VDD =15V; ID =0.5A Vgen=5V; Rgen=R IN MINn=330Ω (see figure 1) 70 200 ns tr Rise Time 170 500 ns td(off) Turn-off Delay Time 350 1000 ns tf Fall Time 200 600 ns td(on) Turn-on Delay Time VDD =15V; ID =0.5A Vgen=5V; Rgen=2.2KΩ (see figure 1) 0.25 1.0 µs tr Rise Time 1.3 4.0 µs td(off) Turn-off Delay Time 1.8 5.5 µs tf Fall Time 1.2 4.0 µs (dI/dt)on Turn-on Current Slope VDD =15V; ID =1.5A Vgen=5V; Rgen=R IN MINn=330Ω 5.0 A/ µs Q i Total Input Charge VDD =12V; ID =0.5A; VIN=5V Igen =2.13mA (see figure 5) 5.0 nC Symbol Parameter Test Conditions Min Typ Max Unit VSD (*) Forward On Voltage I SD =0.5A; VIN=0V 0.8 V trr Reverse Recovery Time I SD =0.5A; dI/dt=6A/µs VDD =30V; L=200µH (see test circuit, figure 2) 205 ns Q rr Reverse Recovery Charge 100 µC IRRM Reverse Recovery Current 0.75 A Symbol Parameter Test Conditions Min Typ Max Unit Ilim Drain Current Limit V IN=5V; VDS =13V 1.7 3.5 A tdlim Step Response Current Limit VIN=5V; VDS =13V 2.0 µs Tjsh Overtemperature Shutdown 150 175 200 °C Tjrs Overtemperature Reset 135 °C Igf Fault Sink Current V IN=5V; VDS =13V; Tj=Tjsh 10 15 20 mA Eas Single Pulse Avalanche Energy starting Tj=25°C; VDD =24V VIN=5V Rgen=R IN MINn=330Ω; L=50mH (see figures 3 & 4) 55 mJ Obsolete Product(s) - Obsolete Product(s)

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current I ISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current I D to Ilim whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (T j > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current I gf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I ISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. Obsolete Product(s) - Obsolete Product(s)

Source-Drain Diode Forward Characteristics Derating Curve Static Drain Source On Resistance Static Drain-Source On resistance Vs. Input Voltage TransconductanceStatic Drain-Source On resistance Vs. Input Voltage Id(A) 0.5 1.5 2.5 3.5 4.5 5.5 Gfs (S) Vds=13V Tj=25ºC Tj=150ºC Tj=-40ºC 33 . 544 . 555 . 566 . 57 Vin(V) 100 150 200 250 300 350 400 450 500 Rds(on) (mohms) Id=0.5A Tj=150ºC Tj=-40ºC Tj=25ºC 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) 100 150 200 250 300 350 400 450 500 Rds(on) (mohms) Id=1.5A Id=1A Id=1.5A Id=1A Id=1.5A Id=1A Tj=25ºC Tj=150ºC Tj=-40ºC 0 2 4 6 8 1 01 21 4 Id (A) 700 750 800 850 900 950 1000 Vsd (mV) Vin=0V Id(A) 0.5 1.5 2.5 3.5 4.5 Rds(on) (ohms) Tj=25ºC Tj=150ºC Tj=-40ºC Vin=2.5V Obsolete Product(s) - Obsolete Product(s)

Static Drain-Source On Resistance Vs. Id Turn On Current Slope Transfer Characteristics Turn On Current Slope Input Voltage Vs. Input Charge Turn off drain source voltage slope 0 500 1000 1500 2000 2500 Rg(ohm) di/dt(A/us) Vin=5V Vdd=15V Id=1.5A 0 500 1000 1500 2000 2500 Rg(ohm) 0.2 0.4 0.6 0.8 1.2 1.4 di/dt(A/us) Vin=3.5V Vdd=15V Id=1.5A 0 123456 Qg (nC) Vin (V) Vds=12V Id=0.5A 0 500 1000 1500 2000 2500 Rg(ohm) 100 150 200 250 300 350 dv/dt(V/us) Vin=5V Vdd=15V Id=0.5A 1.5 1.75 2.25 2.5 2.75 3.25 3.5 3.75 4.25 4.5 4.75 Vin(V) 0.25 0.5 0.75 1.25 1.5 1.75 2.25 Idon(A) Vds=13.5V Tj=150ºC Tj=25ºC Tj=-40ºC Id(A) 100 150 200 250 300 350 400 450 500 Rds(on) (mohms) Tj=25ºC Tj=150ºC Tj=-40ºC Vin=5V Vin=3.5V Vin=5V Vin=5V Vin=3.5V Vin=3.5V Obsolete Product(s) - Obsolete Product(s)

Turn Off Drain-Source Voltage Slope Switching Time Resistive Load Output Characteristics Capacitance Variations Switching Time Resistive Load Normalized On Resistance Vs. Temperature 0 500 1000 1500 2000 2500 Rg(ohm) 100 150 200 250 300 350 dv/dt(V/us) Vin=3.5V Vdd=15V Id=0.5A 0 5 10 15 20 25 30 35 Vds(V) 100 125 150 175 200 225 C(pF) f=1MHz Vin=0V 0123456789 1 0 1 1 1 2 VDS(V) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 ID(A) Vin=3V Vin=5.5V Vin=3.5V Vin=4.5V 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) 0.25 0.5 0.75 1.25 1.5 1.75 t(us) Vdd=15V Id=0.5A Vin=5V td(off) td(on) tf tr Vin(V) 100 150 200 250 300 350 400 450 500 550 t(ns) Vdd=15V Id=0.5A Rg=330ohm tr td(off) tf td(on) -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.5 0.75 1.25 1.5 1.75 2.25 Rds(on) (mOhm) Vin=5V Id=0.5A Obsolete Product(s) - Obsolete Product(s)

Normalized Input Threshold Voltage Vs. Temperature Step Response Current Limit Normalized Current Limit Vs. Junction Temperature 5 1 01 52 02 53 03 5 Vdd(V) 1.9 2.1 2.2 2.3 2.4 Tdlim(us) Vin=5V Rg=330ohm -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Vinth (V) Vds=Vin Id=1mA -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.5 1.5 2.5 3.5 4.5 Ilim (A) Vin=5V Vds=13V Obsolete Product(s) - Obsolete Product(s)

DIM. mm. inch A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 F 8 (max.) SO-8 MECHANICAL DATA Obsolete Product(s) - Obsolete Product(s)

SO-8 TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 100 Bulk Q.ty 2000 Tube length (± 0.5) 532 A 3.2 B 6 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) All dimensions are in mm. Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 12.4 N (min) 60 T (max) 18.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 12 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed REEL DIMENSIONS C B A Obsolete Product(s) - Obsolete Product(s)