VNQ05XSP16

Quad channel high side solid state relay

Document overview

• Manufacturer or author: STMICROELECTRONICS
• PDF pages: 17

Technical content

® VNQ05XSP16 QUAD CHANNEL HIGH SIDE SOLID STATE RELAY ■ OUTPUT CURRENT (CONTINUOUS): 5A ■ CMOS COMPATIBLE INPUTS ■ MULTIPLEXED PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE SHUT- DOWN ■ OVERVOLTAGE CLAMP ■ THERMAL SHUT DOWN ■ CURRENT LIMITATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ PROTECTION AGAINST: n LOSS OF GROUND & LOSS OF V CC ■ REVERSE BATTERY PROTECTION (**)

DESCRIPTION

The VNQ05XSP16 is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology. It is intended for driving any type of multiple loads with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device has four independent channels and one multiplexed analog sense output which deliver a current proportional to the selected output current. SenseEnable pin allows to connect any number of VNQ05XSP16 on the same Current Sense line. Active current limitation combined with thermal shut-down and automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection. TYPE R ON (*) I OUT VCC VNQ05XSP16 110m Ω 5A (*) 36 V ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VCC Supply voltage (continuous) 41 V -VCC Reverse supply voltage (continuous) -0.3 V IOUT Output current (continuous), for each channel Internally limited A IR Reverse output current (continuous), for each channel -5 A IIN Input current (IN1,IN2,IN3,IN4,SELA,SELB,SENSENABLE) +/- 10 mA VCSENSE Current sense maximum voltage -3 +15 V V IGND Ground current at Tcase<25°C (continuous) -200 mA VESD Electrostatic Discharge (Human Body Model: R=1.5Ω ; C=100pF) - INPUT - CURRENT SENSE - OUTPUT - V CC 4000 2000 5000 5000 V V V V P tot Power dissipation at Tcase=25°C 78 W EMAX Maximum Switching Energy (L=1.72mH; R L=0Ω ; Vbat=13.5V; Tjstart=150ºC; IL=7.5A) 76 mJ Tj Junction operating temperature Internally limited °C Tc Case Operating Temperature - 40 to 150 °C TSTG Storage temperature -55 to 150 °C ORDER CODES PACKAGE TUBE T&R PowerSO-16 ™ VNQ05XSP16 VNQ05XSP1613TR PowerSO-16 TM (*) Per each channel DocID8265 Rev 11 (**) See application schematic at page 9 September 3013 Obsolete Product(s) - Obsolete Product(s)

OVERTEMP. 1 OVERTEMP. 2 INPUT 1 GND VCC OUTPUT 1 QUAD ILIM 1 K IOUT1 Ot1 INPUT 2 INPUT 3 INPUT 4 ANALOG Mux OVERTEMP. 3 OVERTEMP. 4 CS1 CS2 CS3 CS4 CURRENT SENSE DIAG LOGIC SELECT A SELECT B SENSE ENABLE DRIVER 1 CS 1 DEMAG 1 OUTPUT 2 OUTPUT 3 OUTPUT 4 Same structure for the channels2,3,4 VdsLIM 1 Obsolete Product(s) - Obsolete Product(s)

CURRENT AND VOLTAGE CONVENTIONS GROUND INPUT 4 C.SENSE SENSENABLE N.C. INPUT 1 INPUT 2 INPUT 3 SELA SELB VCC N.C. OUTPUT 1 OUTPUT 2 OUTPUT 3 OUTPUT 4 VCC OUTPUT3 INPUT2 IOUT3 VOUT4 OUTPUT2 IOUT2 VOUT3 INPUT1 IIN1 OUTPUT1 IOUT1 OUTPUT4 IOUT4 VOUT2 VOUT1 IIN2 IIN4 INPUT3 INPUT4VIN4 VIN3 IIN3VIN2 VIN1 CONNECTION DIAGRAM (TOP VIEW) VCC IS VCC IGND GND VSENSE ISENSE SENSE SELA SELB SENSENABLE VSENSENABLE VSELB VSELA ISELA ISELB ISENSENABLE Obsolete Product(s) - Obsolete Product(s)

(*) When mounted on FR4 printed circuit board with 0.5 cm² of copper area (at least 35 µm thick) connected to all VCC pins ELECTRICAL CHARACTERISTICS (8V<VCC <36V; -40°C<Tj<150°C; unless otherwise specified) (Per each channel) POWER SWITCHING (V CC =13V) PROTECTIONS Note 1: Vclamp and VOV are correlated. Typical difference is 5V. Symbol Parameter Value Unit R thj-case Thermal resistance junction-case (MAX) 1.6 °C/W R thj-amb Thermal resistance junction-ambient (MAX) 51.6 (*) °C/W Symbol Parameter Test Conditions Min Typ Max Unit VCC Operating supply voltage 5.5 13 36 V VUSD Under voltage shut down 3 4 5.5 V VOV Overvoltage shut down 36 V R ON On state resistance IOUT 1,2,3,4=1A; Tj=25°C IOUT 1,2,3,4=1A; Tj=150°C IOUT 1,2,3,4=0.5A; VCC =6V 110 220 330 m Ω m Ω m Ω V clamp Clamp Voltage I CC =20mA (See note 1) 41 48 55 V IS Supply current Off state; Inputs=n.c.; VCC =13V On state; VIN=5V; VCC =13V; IOUT =0A; R SENSE =3.9kΩ µA mA IL(off1) Off State Output Current VIN=V OUT =0V 0 50 µA IL(off2) Off State Output Current VIN=0V; VOUT =3.5V -75 0 µA IL(off3) Off State Output Current VIN=V OUT =0V; Vcc=13V; Tj=125°C 5 µA IL(off4) Off State Output Current VIN=V OUT =0V; Vcc=13V; Tj=25°C 3 µA Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on delay time R L=2.6Ω channels 1,2,3,4 (see figure 2) 40 µs td(off) Turn-off delay time R L=2.6Ω channels 1,2,3,4 (see figure 2) 40 µs (dVOUT / dt)on Turn-on voltage slope RL=2.6Ω channels 1,2,3,4 (see figure 2) See relative diagram V/µs (dVOUT / dt)off Turn-off voltage slope RL=2.6Ω channels 1,2,3,4 (see figure 2) See relative diagram V/µs Symbol Parameter Test Conditions Min Typ Max Unit Ilim DC short circuit currentVCC =13V 5.5V<VCC <36V 57 . 5 1 0 A A TTSD Thermal shut down temperature 150 175 200 °C TR Thermal reset temperature 135 °C THYST Thermal hysteresis 71 5 ° C Vdemag Turn-off output voltage clamp IOUT =2A; L=6mH VCC -41 VCC -48 VCC -55 V VON Output voltage drop limitation IOUT =0.1A Tj=-40°C...+150°C 50 mV Obsolete Product(s) - Obsolete Product(s)

CURRENT SENSE (9V< V CC <16V) LOGIC CHARACTERISTICS (Inputs, Sela&b, Sensenable) Note 2: current sense signal delay after positive input slope. Note: Sense pin doesn’t have to be left floating. Symbol Parameter Test Conditions Min Typ Max Unit K1 IOUT /ISENSE IOUT =0.1A; VSENSE =0.5V Tj=-40...+150°C 650 950 1200 dK1/K1 Current Sense Ratio Drift IOUT =0.1A; VSENSE =0.5V; K2 IOUT /ISENSE IOUT =1.0A, VSENSE =4V Tj=-40...+150°C 800 1000 1200 dK2/K2 Current Sense Ratio Drift IOUT =1.0A; VSENSE =4V; K3 IOUT /ISENSE IOUT =2.0A, VSENSE =4V Tj=-40...+150°C 850 1000 1150 dK3/K3 Current Sense Ratio Drift IOUT =2.0A; VSENSE =4V; ISENSEO Analog Sense Leakage Current VCC =6...16V; IOUT =0A;VSENSE =0V; Tj=-40°C...+150°C 01 0 µA VSENSE1,2,3,4 Max analog sense output voltage VCC =5.5V, IOUT1,2,3,4=1.0A R SENSE =10kΩ VCC >8V, IOUT1,2,3,4=2.0A R SENSE =10kΩ V V VSENSEH Analog sense output voltage in overtemperature condition V CC =13V; RSENSE = 3.9kΩ 5.5 V R VSENSEH Analog sense output impedance in overtemperature condition VCC =13V; Tj>TTSD ; All Channels Open 400 Ω tDSENSE Current sense delay VCC =13V; RSENSE =3.9kΩ (see note 2) 300 500 µs Symbol Parameter Test Conditions Min Typ Max Unit VIL Input low level voltage 1.25 V VIH Input high level voltage 3.25 V VI(hyst) Input hysteresis voltage 0.5 V IIL Low level input current VIN=1.25V 1 µA IIN High level input current VIN=3.25V 10 µA VICL Input clamp voltageIIN=1mA IIN=-1mA 66 . 8 -0.7 V Obsolete Product(s) - Obsolete Product(s)

Figure 1: IOUT /ISENSE versus IOUT CONDITIONS INPUT OUTPUT SENSE Normal operation L H L H Nominal Overtemperature L H L L VSENSEH Undervoltage L H L L Overvoltage L H L L Short circuit to GND L H H L L L j<TTSD ) 0 (Tj>TTSD ) VSENSEH Short circuit to VCC L H H H < Nominal Negative output voltage clamp LL 0 SENSENABLE SELB SELA SENSE L X X High Impedance HL L I SENSE =IOUT1 /K HL H I SENSE =IOUT2 /K HH L I SENSE =IOUT3 /K HH H I SENSE =IOUT4 /K 500 600 700 800 900 1000 1100 1200 1300 1400 1500 0123456789 1 0 IOUT (A) IOUT /ISENSE max. Tj=-40°C<<150°C min. Tj=-40°C<<150°C typical value Obsolete Product(s) - Obsolete Product(s)

ELECTRICAL TRANSIENT REQUIREMENTS Figure 2: Switching Characteristics (Resistive load RL=1.3Ω ) ISO T/R Test Pulse Test Levels I Test Levels II Test Levels III Test Levels IV Test Levels Delays and Impedance 1 -25V -50V -75V -100V 2ms, 10 Ω 2 +25V +50V +75V +100V 0.2ms, 10 Ω 3a -25V -50V -100V -150V 0.1 µs, 50Ω 3b +25V +50V +75V +100V 0.1 µs, 50Ω 4 -4V -5V -6V -7V 10ms, 0.01 Ω 5 +26.5V +46.5V +66.5V +86.5V 400ms, 2 Ω ISO T/R Test Pulse Test Levels Result I Test Levels Result II Test Levels Result III Test Levels Result IV

1 CC C C

2 CC C C

4 CC C C

5 CE E E

C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device. VOUT dVOUT /dt(on) tr 80% 10% tf dVOUT /dt(off) ISENSE t t 90% td(off) INPUT t 90% td(on) tDSENSE Obsolete Product(s) - Obsolete Product(s)

Figure 3: Waveforms SENSE 1 INPUT 1 NORMAL OPERATION (for example: Channel1 is ON) UNDERVOLTAGE VCC VUSD VUSDhyst INPUT 1 OVERVOLTAGE VCC SENSE 1 INPUT 1 SENSE 1 LOAD CURRENT 1 LOAD CURRENT 1 LOAD CURRENT 1 OVERTEMPERATURE INPUT 1 SENSE 1 TTSD TR Tj LOAD CURRENT 1 VOV VCC > VOVVCC < VOV SHORT TO GROUND INPUT 1 LOAD CURRENT 1 SENSE 1 LOAD VOLTAGE 1 INPUT 1 LOAD VOLTAGE 1 SENSE 1 LOAD CURRENT 1 <Nominal <Nominal SHORT TO V CC ISENSE = R SENSE VSENSEH SENSEN SENSEN SENSEN SENSEN SENSEN SENSEN Obsolete Product(s) - Obsolete Product(s)

C. SENSE D ld +5V R prot OUTPUT1 R SENSE INPUT1 INPUT2 µC R prot R prot R prot INPUT3 INPUT4 D GND R GND VGND GND OUTPUT3 R prot R prot R prot R prot OUTPUT4 Notes: Input1,2,3,4, SELA, SELB, SENSENABLE have the same structure. SELA SESB SENSENABLE GND PROTECTION NETWORK AGAINST REVERSE BATTERY Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the R GND resistor. 1)R GND ≤ 600mV / (IS(on)max). 2)R GND ≥ (-VCC ) / (-IGND ) wh ere -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in R GND (when VCC <0: during reverse battery situations) is: P D = (-VCC )2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where I S(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the R GND will produce a shift (IS(on)max * RGND ) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same R GND . If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND ) in the ground line. A resistor (RGND =1kΩ ) should be inserted in parallel to D GND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (≅600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. LOAD DUMP PROTECTION D ld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the V CC line that are greater than the ones shown in the ISO T/R 7637/1 table. µC I/Os PROTECTION: If a ground protection network is used and negative transients are present on the V CC line, the control pins will be pulled negative. ST suggests to insert a resistor prot) in line to prevent the µC I/Os pins to latch-up. T he value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. CCpeak /Ilatchup ≤ Rprot ≤ (VOH µC -VIH-VGND ) / IIHmax For VCCpeak = - 100V and Ilatchup ≥ 20mA; VOH µC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ . Recommended R prot value is 10kΩ. A/D C PAR RSENSE x CPAR <10µs C FILTER Obsolete Product(s) - Obsolete Product(s)

-50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.5 1.5 2.5 3.5 4.5 IL(off) (µA) Off state Vcc=36V Vin=Vout=0V -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.5 1.5 2.5 3.5 4.5 Iih (µA) Vin=3.25V -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 6.25 6.5 6.75 7.25 7.5 7.75 Vicl (V) Iin=1mA -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 32.5 37.5 42.5 47.5 Vov (V) Input High Level ILIM Vs Tcase -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 2.2 2.4 2.6 2.8 3.2 3.4 3.6 Vih (V) -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 2.5 7.5 12.5 17.5 Ilim (A) Vcc=13V Obsolete Product(s) - Obsolete Product(s)

Turn-on Voltage Slope Turn-off Voltage Slope -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 150 200 250 300 350 400 450 500 dVout/dt(on) (V/ms) Vcc=13V Rl=2.6Ohm -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 150 200 250 300 350 400 450 500 550 600 dVout/dt(off) (V/ms) Vcc=13V Rl=2.6Ohm On State Resistance Vs Tcase On State Resistance Vs VCC -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 125 150 175 200 225 250 Ron (mOhm) Iout=1A Vcc=8V & 36V 5 1 01 52 02 53 03 54 0 Vcc (V) 100 125 150 175 200 Ron (mOhm) Iout=1A Tc=150ºC Tc=25ºC Tc=-40ºC Obsolete Product(s) - Obsolete Product(s)

Maximum turn off current versus load inductance A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC =13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL t Demagnetization Demagnetization Demagnetization 100 0.01 0.1 1 10 L(mH) ILMAX (A) A B C Obsolete Product(s) - Obsolete Product(s)

PowerSO-16 ™ PC Board R thj-amb Vs PCB copper area in open box free air condition PowerSO-16 ™ THERMAL DATA Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: 6cm2). 02468 1 0 PCB Cu heatsink area (cm^2) RTHj_amb (°C/W) Tj-Tamb=50°C Obsolete Product(s) - Obsolete Product(s)

Thermal fitting model of a quad HSD in PowerSO-16 Pulse calculation formula Thermal Parameter Area/island (cm2) Footprint 6 R1 (°C/W) 0.18 R2 (°C/W) 0.8 R3 ( °C/W) 0.7 R4 (°C/W) 0.8 R5 (°C/W) 13 R6 (°C/W) 37 22 C1 (W.s/°C) 0.0006 C2 (W.s/°C) 1.50E-03 C3 (W.s/°C) 1.75E-02 C4 (W.s/°C) 0.4 C5 (W.s/°C) 0.75 C6 (W.s/°C) 3 5 ZTH δ R TH δ ZTHtp 1 δ–()+⋅= where δ tp T⁄= Thermal Impedance Junction Ambient Single Pulse 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) ZTH (°C/W) Pd1 C3 C4 R3R1 R6R5R2 C5 C6C2 Pd2 R14 C13 C14 R13 Tj_1 Tj_2 T_amb Pd3 R10 C9 C10 R9R7 R12R11R8 C11 C12C8 Pd4 R16 C15 C16 R15 Tj_3 Tj_4 R17 R18 Footprint 6 cm2 Obsolete Product(s) - Obsolete Product(s)

DIM. mm. MIN. TYP MAX. A1 0 0.05 0.1 A2 3.4 3.5 3.6 A3 1.2 1.3 1.4 A4 0.15 0.2 0.25 a0 . 2 b 0.27 0.35 0.43 c 0.23 0.27 0.32 D 9.4 9.5 9.6 D1 7.4 7.5 7.6 d 0 0.05 0.1 E (1) 13.85 14.1 14.35 E1 9.3 9.4 9.5 E2 7.3 7.4 7.5 E3 5.9 6.1 6.3 e0 . 8 e1 5.6 F0 . 5 G1 . 2 L 0.8 1 1.1 R1 0.25 R2 0.8 T 2° 5° 8° T1 6° (typ.) T2 10° (typ.) Package Weight (typ.) P013Q POWERSO-16 TM MECHANICAL DATA Obsolete Product(s) - Obsolete Product(s)

PowerSO-16 ™ SUGGESTED PAD LAYOUT TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS All dimensions are in mm. Base Q.ty 600 Bulk Q.ty 600 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 All dimensions are in mm. Tape width W 24 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 24 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 11.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed All dimensions are in mm. Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) 50 1000 532 4.9 17.2 0.8 TUBE SHIPMENT (no suffix) CA B 7.4 +/- 0.1 10.5 +/- 0.1 2 +/- 0.14 0.5 +/- 0.1 0.8 +/- 0.1 10 +/- 0.1 Obsolete Product(s) - Obsolete Product(s)