VNP49N04-E

VNP49N04-E STMICROELECTRONICS | Alldatasheet

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OMNIFET : FULLY AUTOPROTECTED POWER MOSFET September 2013 TO-220 BLOCK DIAGRAM TYPE V clamp R DS(on) Ilim VNP49N04 42 V 0.02 W 49 A ■ LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP ■ LOW CURRENT DRAWN FROM INPUT PIN ■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ■ ESD PROTECTION ■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) ■ COMPATIBLE WITH STANDARD POWER MOSFET ■ STANDARD TO-220 PACKAGE

DESCRIPTION

The VNP49N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limita- tion and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. Obsolete Product(s) - Obsolete Product(s)

Symbol Parameter Value Unit V DS Drain-source Voltage (Vin = 0) Internally Clamped V V in Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -50 A V esd Electrostatic Discharge (C= 100 pF, R=1.5 KW) 2000 V P tot Total Dissipation at Tc =2 5 oC 125 W Tj Operating Junction Temperature Internally Limited oC Tc Case Operating Temperature Internally Limited oC Tst g Storage Temperature -55 to 150 oC THERMAL DATA R thj-case R thj- amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V CLAMP Drain-source Clamp Voltage ID = 200 mA V in = 0 36 42 48 V V CLTH Drain-source Clamp Threshold Voltage ID =2m A V in =0 3 5 V V INCL Input-Source Reverse Clamp Voltage Iin =- 1m A - 1 - 0 . 3 V IDSS Zero Input Voltage Drain Current (Vin =0 ) V DS =1 3V V in=0 V DS =2 5V V in=0 200 mA mA IISS Supply Current from Input Pin V DS =0V V in = 10 V 250 500 mA ON (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit V IN(th) Input Threshold Voltage V DS =V in ID +Iin =1m A 0 . 8 3 V R DS(on) Static Drain-source On Resistance V in =1 0V I D =2 5A V in =5V I D =2 5A 0.02 0.025 W W DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*)F o r w a r d Transconductance V DS =1 3V I D =2 5A 2 5 3 0 S C oss Output Capacitance V DS =1 3V f=1M H z V in = 0 1100 1500 pF VNP49N04 Obsolete Product(s) - Obsolete Product(s)

ELECTRICAL CHARACTERISTICS (continued) SWITCHING (**) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD =1 5V I d =2 5A V gen =1 0V R gen =1 0 W (see figure 3) 200 1300 800 300 300 1800 1200 450 ns ns ns ns t d(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD =1 5V I d =2 5A V gen =1 0V R gen = 1000 W (see figure 3) 1.3 3.8 6.1 1.9 5.2 8.5 ms ms ms ms (di/dt)on Turn-on Current Slope V DD =1 5V I D =2 5A V in =1 0V R gen =1 0 W

25 A/ ms

Q i Total Input Charge V DD =1 5V I D =2 5A V in = 10 V 100 nC SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit V SD (*)F o r w a r d O n V o l t a g e ISD =2 5A V in =0 1 . 6 V trr ( ) Q rr ( ) IRRM () Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 25 A di/dt = 100 A/ ms V DD =3 0V T j =2 5 oC (see test circuit, figure 5) 250 910 7.5 ns nC A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit Ilim Drain Current Limit V in =1 0V V DS =1 3V V in =5V V DS =1 3V A A tdlim ( ) Step Response Current Limit V in =1 0V V in =5V 150 ms ms Tjsh ( ) Overtemperature Shutdown 150 oC Tjrs( ) Overtemperature Reset 135 oC Igf () Fault Sink Current V in =1 0V V DS =1 3V V in =5V V DS =1 3V mA mA E as () Single Pulse Avalanche Energy starting Tj =2 5 oCV DD =2 0V V in =1 0V R gen =1K W L=6m H (*) Pulsed: Pulse duration = 300ms, duty cycle 1.5 % (**) Parameters guaranteed by design/characterization VNP49N04 Obsolete Product(s) - Obsolete Product(s)

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user s standpoint is that a small DC current (I iss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 oC. The device is automatically restarted when the chip temperature falls below 135oC. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100W. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R DS(on)). PROTECTION FEATURES VNP49N04 Obsolete Product(s) - Obsolete Product(s)

Static Drain-Source On Resistance vs Input Voltage Derating Curve Transconductance Static Drain-Source On Resistance VNP49N04 Obsolete Product(s) - Obsolete Product(s)

Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature VNP49N04 Obsolete Product(s) - Obsolete Product(s)

Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load VNP49N04 Obsolete Product(s) - Obsolete Product(s)

Switching Time Resistive Load Step Response Current Limit Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics VNP49N04 Obsolete Product(s) - Obsolete Product(s)

Fig. 2:Unclamped Inductive Waveforms Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 4:Input Charge Test Circuit Fig. 1:Unclamped Inductive Load Test Circuits Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6:Waveforms VNP49N04 Obsolete Product(s) - Obsolete Product(s)

DIM. mm. MIN. TYP MAX. A 4.40 4.60 b 0.61 0.88 b1 1.15 1.70 c 0.49 0.70 D 15.25 15.75 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L1 3 1 4 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Package Weight 1.9Gr. (Typ.) TO-220 MECHANICAL DATA Obsolete Product(s) - Obsolete Product(s)