“Omnifet”: fully autoprotected Power MOSFET
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 13
Technical content
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET September 2013 BLOCK DIAGRAM ( ∗) TYPE V clamp R DS(on) Ilim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A ■ LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP ■ LOW CURRENT DRAWN FROM INPUT PIN ■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ■ ESD PROTECTION ■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) ■ COMPATIBLE WITH STANDARD POWER MOSFET
DESCRIPTION
The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. PowerSO-10 D2PAK TO-263 ISOWATT220 (∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
Symbol Parameter Value Unit PowerSO-10 D2PAK ISOWATT220 V DS Drain-source Voltage (Vin = 0) Internally Clamped V V in Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -28 A V esd Electrostatic Discharge (C= 100 pF, R=1.5 KΩ ) 2000 V Ptot Total Dissipation at Tc = 25 oC8 3 3 4 W Tj Operating Junction Temperature Internally Limited oC Tc Case Operating Temperature Internally Limited oC Tstg Storage Temperature -55 to 150 oC THERMAL DATA ISOWATT220 PowerSO-10 D2PAK R thj-case R thj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.75 62.5 1.5 1.5 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V CLAMP Drain-source Clamp Voltage ID = 200 mA Vin = 0 6 07 08 0 V V CLTH Drain-source Clamp Threshold Voltage ID = 2 mA Vin = 0 55 V V INCL Input-Source Reverse Clamp Voltage Iin = -1 mA -1 -0.3 V IDSS Zero Input Voltage Drain Current (Vin = 0) V DS = 13 V Vin = 0 V DS = 25 V Vin = 0 200 µ A µ A IISS Supply Current from Input Pin V DS = 0 V Vin = 10 V 250 500 µ A ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V IN(th) Input Threshold Voltage V DS = Vin ID + Iin = 1 mA 0.8 3 V R DS(on) Static Drain-source On Resistance V in = 10 V ID = 10 A V in = 5 V ID = 10 A 0.05 0.07 Ω Ω DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS = 13 V ID = 10 A 13 17 S C oss Output Capacitance V DS = 13 V f = 1 MHz Vin = 0 500 800 pF VNP20N07FI-VNB20N07-VNV20N07
ELECTRICAL CHARACTERISTICS (continued) SWITCHING (∗∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V Id = 10 A V gen = 10 V Rgen = 10 Ω (see figure 3) 240 430 150 180 400 800 300 ns ns ns ns td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V Id = 10 A V gen = 10 V Rgen = 1000 Ω (see figure 3) 800 1.5 3.5 1200 2.2 5.5 ns µ s µ s µ s (di/dt)on Turn-on Current Slope V DD = 15 V ID = 10 A V in = 10 V Rgen = 10 Ω
60 A/ µ s
Q i Total Input Charge V DD = 12 V ID = 10 A Vin = 10 V 60 nC SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit V SD (∗) Forward On Voltage I SD = 10 A Vin = 0 1.6 V trr(∗∗) Q rr(∗∗) IRRM (∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 10 A di/dt = 100 A/µ s V DD = 30 V Tj = 25 oC (see test circuit, figure 5) 165 0.55 6.5 ns µ C A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit Ilim Drain Current Limit V in = 10 V VDS = 13 V V in = 5 V VDS = 13 V A A tdlim(∗∗) Step Response Current Limit V in = 10 V V in = 5 V 140 µ s µ s Tjsh(∗∗) Overtemperature Shutdown 150 oC Tjrs(∗∗) Overtemperature Reset 135 oC Igf(∗∗) Fault Sink Current V in = 10 V V in = 5 V mA mA E as(∗∗) Single Pulse Avalanche Energy starting Tj = 25 oC VDD = 20 V V in = 10 V Rgen = 1 KΩ L = 10 mH 0.95 J (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterization VNP20N07FI-VNB20N07-VNV20N07
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (I iss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 oC. The device is automatically restarted when the chip temperature falls below 135 oC. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω . The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R DS(on)). PROTECTION FEATURES VNP20N07FI-VNB20N07-VNV20N07
Thermal Impedance For ISOWATT220 Derating Curve Transconductance Thermal Impedance For D2PAK / PowerSO-10 Output Characteristics Static Drain-Source On Resistance vs Input Voltage VNP20N07FI-VNB20N07-VNV20N07
Static Drain-Source On Resistance Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature VNP20N07FI-VNB20N07-VNV20N07
Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load VNP20N07FI-VNB20N07-VNV20N07
Switching Time Resistive Load Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics Switching Time Resistive Load Step Response Current Limit VNP20N07FI-VNB20N07-VNV20N07
Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 1: Unclamped Inductive Load Test Circuits Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms VNP20N07FI-VNB20N07-VNV20N07
DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 ISOWATT220 MECHANICAL DATA P011G VNP20N07FI-VNB20N07-VNV20N07
DIM. mm inch A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 L B G E A D C P011P6/C TO-263 (D2PAK) MECHANICAL DATA VNP20N07FI-VNB20N07-VNV20N07
DIM. mm inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e1 . 2 7 0 . 0 5 0 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 h0 . 5 0 0 . 0 0 2 L 1.20 1.80 0.047 0.071 q1 . 7 0 0 . 0 6 7 α 0 o 8o DETAIL "A" PLANE SEATING α L F h A D D1= = = = = = 0.10 A E1E3 C Q A = = B B DETAIL "A" SEATING PLANE = = = = 610 e B HE M0.25 = = = = 0068039-C PowerSO-10 MECHANICAL DATA VNP20N07FI-VNB20N07-VNV20N07