"Omnifet": fully autoprotected Power MOSFET
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 11
Technical content
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET September 2013 TO-220 BLOCK DIAGRAM TYPE V clamp R DS(on) Ilim VNP10N06 60 V 0.3 Ω 10 A ■ LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP ■ LOW CURRENT DRAWN FROM INPUT PIN ■ LOGIC LEVEL INPUT THRESHOLD ■ ESD PROTECTION ■ SCHMITT TRIGGER ON INPUT ■ HIGH NOISE IMMUNITY ■ STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi- tation and overvoltage clamp protect the chip n harsh enviroments.
Symbol Parameter Value Unit V DS Drain-source Voltage (Vin = 0) Internally Clamped V V in Input Voltage Internally Clamped V Iin Input Current ± 20 mA ID Drain Current Internally Limited A IR Reverse DC Output Current -15 A V esd Electrostatic Discharge (C= 100 pF, R=1.5 KΩ ) 4000 V Ptot Total Dissipation at Tc = 25 oC4 2 W Tj Operating Junction Temperature Internally Limited oC Tc Case Operating Temperature Internally Limited oC Tstg Storage Temperature -55 to 150 oC THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V CLAMP Drain-source Clamp Voltage I D = 200 mA Vin = 0 5 06 07 0 V V IL Input Low Level Voltage I D = 100 µA VDS = 16 V 1.5 V VIH Input High Level Voltage R L = 27 Ω VDD = 16 V V DS = 0.5 V 3.2 V V INCL Input-Source Reverse Clamp Voltage I in = -1 mA Iin = 1 mA -0.3 V V I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 50 V Vin = VIL V DS < 35 V Vin = VIL 250 100 µ A µ A I ISS Supply Current from Input Pin V DS = 0 V Vin = 5 V 150 300 µ A ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit R DS(on) Static Drain-source On Resistance V in = 7 V ID = 1 A TJ < 125 oC 0.15 0.3 Ω DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit C oss Output Capacitance V DS = 13 V f = 1 MHz Vin = 0 350 500 pF VNP10N06
ELECTRICAL CHARACTERISTICS (continued) SWITCHING (∗∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 16 V Id = 1 A V gen = 7 V Rgen = 10 Ω (see figure 3) 1100 550 200 100 1600 900 400 200 ns ns ns ns t d(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 16 V Id = 1 A V gen = 7 V Rgen = 1000 Ω (see figure 3) 1.2 1.6 1.2 1.8 1.5 2.3 1.8 µ s µ s µ s µ s (di/dt) on Turn-on Current Slope V DD = 16 V ID = 1 A V in = 7 V Rgen = 10 Ω
1.5 A/ µ s
Q i Total Input Charge V DD = 12 V ID = 1 A Vin = 7 V 13 nC SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit V SD (∗) Forward On Voltage I SD = 1 A Vin = VIL 0.8 1.6 V trr (∗∗) Q rr (∗∗) IRRM (∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1 A di/dt = 100 A/µs V DD = 30 V Tj = 25 oC (see test circuit, figure 5) 125 0.22 3.5 ns µ C A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit Ilim Drain Current Limit V in = 7 V VDS = 13 V 6 10 15 A tdlim (∗∗) Step Response Current Limit V in = 7 V VDS step from 0 to 13 V 12 20 µ s Tjsh (∗∗) Overtemperature Shutdown 150 oC Tjrs (∗∗) Overtemperature Reset 135 oC E as (∗∗) Single Pulse Avalanche Energy starting Tj = 25 oC VDD = 24 V V in = 7 V Rgen = 1 KΩ L = 10 mH 250 mJ (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterization VNP10N06
During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as V IN > VIH. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current (typically 150 µA) flows into the INPUT pin in order to supply the internal circuitry. During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET. In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current I D to Ilim whatever the INPUT pin Voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. If Tj reaches T jsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when T j has cooled down to Tjrs VNP10N06
Static Drain-Source On Resistance Derating Curve Static Drain-Source On Resistance vs Input Voltage Static Drain-Source On Resistance VNP10N06
Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Capacitance Variations Normalized On Resistance vs Temperature Turn-on Current Slope VNP10N06
Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Switching Time Resistive Load VNP10N06
Current Limit vs Junction Temperature Source Drain Diode Voltage vs Junction Temperature Step Response Current Limit VNP10N06
Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 1: Unclamped Inductive Load Test Circuits Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms VNP10N06
DIM. mm. MIN. TYP MAX. A 4.40 4.60 b 0.61 0.88 b1 1.15 1.70 c 0.49 0.70 D 15.25 15.75 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L1 3 1 4 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Package Weight 1.9Gr. (Typ.) TO-220 MECHANICAL DATA