VNN3NV04TR-E STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 26

Technical content

Datasheet sections

  • 1 Block diagram and pin description
  • 2 Electrical specifications
  • 2.1 Absolute maximum ratings
  • 2.2 Thermal data
  • 2.3 Electrical characteristics
  • 3 Protection features
  • 3.1 Electrical characteristics curves
  • 4 Package and packing information
  • 4.1 ECOPACK ®
  • 4.2 TO-251 (IPAK) mechanical data
  • 4.3 TO-252 (DPAK) mechanical data
  • 4.4 SOT -223 mechanical data
  • 4.5 SO-8 mechanical data
  • 4.6 SOT -223 packing information
  • 4.7 SO-8 packing information
  • 4.8 DPAK packing information
  • 4.9 IPAK packing information
  • 5 Revision history

Features

■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive

Description

The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics™ VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Type R DS(on) Ilim Vclamp VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 120 mΩ 3.5 A 40 V SOT-223 SO-8 TO251 (IPAK) 3 3 TO252 (DPAK) Table 1. Device summary

1 Block diagram and pin description

Figure 1. Block diagram Figure 2. Configurati on diagram (top view)

  1. For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.

2 Electrical specifications

Figure 3. Current and voltage conventions

2.1 Absolute maximum ratings

Table 2. Absolute maximum ratings

2.2 Thermal data

2.3 Electrical characteristics

-40 °C < Tj < 150 °C, unless otherwise specified. Table 3. Thermal data

  1. When mounted on a standard single-sided FR4 board with 50 mm 2 of Cu (at least 35 mm thick) connected to all DRAIN

Table 4. Electrical characteristics

  1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Table 4. Electrical characteristics (continued)

VNN3NV04, VNS3NV04, VND3NV04, VND3NV04-1 Protection features Doc ID 7382 Rev 3 9/26

3 Protection features

During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path. The device then behaves like a standard Power MOSFET and can be used as a switch from DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current I ISS (typ. 100µA) flows into the input pin in order to supply the internal circuitry. The device integrates:

  • Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
  • Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold T jsh.
  • Over temperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Over temperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15 °C below shutdown temperature.
  • Status feedback: in the case of an over temperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the input pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the input pin driver is not able to supply the current I gf, the input pin will fall to 0 V. This will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL logic circuit.

3.1 Electrical char acteristics curves

Figure 9. Thermal impedance for DPAK/IPAK Figure 10. Thermal impedance for SOT-223 Figure 11. Derating curve Figure 12. Transconductance Figure 13. Static drain-source on resistance Figure 14. Static drain-source on resistance

4 Package and packing information

4.1 ECOPACK ®

ECOPACK® is an ST trademark.

4.2 TO-251 (IPAK) mechanical data

Table 5. TO-251 (IPAK) mechanical data

Figure 32. TO-251 (IPAK) package dimensions

4.3 TO-252 (DPAK) mechanical data

Table 6. TO-252 (DPAK) mechanical data

Figure 33. TO-252 (DPAK) package dimensions

4.4 SOT-223 mechanical data

Table 6. TO-252 (DPAK) mechanical data (continued) Table 7. SOT-223 mechanical data

Figure 34. SOT-223 package dimensions

4.5 SO-8 mechanical data

Table 7. SOT-223 mechanical data (continued) Table 8. SO-8 mechanical data

Figure 35. SO-8 package dimensions

  1. Dimension “D” does not include mold fl ash, protrusions or gate burrs. Mold flash, protrusions or gate burrs

shall not exceed 0.15 mm in total (both side).

  1. Dimension “E1” does not include interlead flash or pr otrusions. Interlead flash or protrusions shall not

Table 8. SO-8 mechanical data (continued)

4.6 SOT-223 packing information

Figure 36. SOT-223 tape and reel shipment (suffix “TR”)

4.7 SO-8 packing information

Figure 37. SO-8 tube shipment (no suffix) Figure 38. SO-8 tape and reel shipment (suffix “TR”)

4.8 DPAK packing information

Figure 39. DPAK footprint and tube shipment (no suffix) Figure 40. DPAK tape and reel shipment (suffix “TR”)

4.9 IPAK packing information

Figure 41. IPAK tube shipment (no suffix)

5 Revision history

Table 9. Document revision history