VND810

VND810 STMICROELECTRONICS | Alldatasheet

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Technical content

DOUBLE CHANNEL HIGH SIDE DRIVER ■ CMOS COMPATIBLE INPUTS ■ OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN ■ PROTECTION AGAINST LOSS OF GROUND ■ VERY LOW STAND-BY CURRENT ■ REVERSE BATTERY PROTECTION (**)

DESCRIPTION

The VND810 is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state. Output shorted to V CC is detected in the off state. Device automatically turns off in case of ground pin disconnection. TYPE R DS(on) IOUT VCC VND810 160 m Ω (*) 3.5 A (*) 36 V SO-16 ORDER CODES PACKAGE TUBE T&R SO-16 VND810 VND810 13TR (*) Per each channel BLOCK DIAGRAM (**) See application schematic at page 8 OVERTEMP . 1 Vcc GND INPUT1 OUTPUT1 OVERVOLTAGE LOGIC DRIVER 1 STATUS1 Vcc CLAMP UNDERVOLTAGE CLAMP 1 OPENLOAD ON 1 CURRENT LIMITER 1 OPENLOAD OFF 1 OUTPUT2 DRIVER 2 CLAMP 2 OPENLOAD ON 2 OPENLOAD OFF 2 OVERTEMP. 2 INPUT2 STATUS2 CURRENT LIMITER 2

CONNECTION DIAGRAM (TOP VIEW) CURRENT AND VOLTAGE CONVENTIONS Symbol Parameter Value Unit VCC DC Supply Voltage 41 V - VCC Reverse DC Supply Voltage - 0.3 V - IGND DC Reverse Ground Pin Current - 200 mA IOUT DC Output Current Internally Limited A - IOUT Reverse DC Output Current - 6 A IIN DC Input Current +/- 10 mA Istat DC Status Current +/- 10 mA VESD Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) - INPUT - STATUS - OUTPUT - V CC 4000 4000 5000 5000 V V V V E MAX Maximum Switching Energy (L=1.5mH; RL=0Ω ; Vbat=13.5V; Tjstart=150ºC; IL=5A) 26 mJ Ptot Power Dissipation TC =25°C 8.3 W Tj Junction Operating Temperature Internally Limited °C Tc Case Operating Temperature - 40 to 150 °C Tstg Storage Temperature - 55 to 150 °C VCC VCC OUTPUT 2 OUTPUT 2 OUTPUT 1 VCC OUTPUT 1 VCC VCC INPUT 2 STATUS 2 STATUS 1 INPUT 1 VCC GND N.C. 8 9 IS IGND OUTPUT 2 VCC GNDSTATUS 2 INPUT 2 IOUT2 IIN2 ISTAT2 VSTAT2 VIN2 V CC V OUT2 OUTPUT 1 IOUT1 VOUT1 INPUT 1 IIN1 STATUS 1 ISTAT1V IN1 VSTAT1

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. ELECTRICAL CHARACTERISTICS (8V<VCC <36V; -40°C < Tj <150°C, unless otherwise specified) (Per each channel) POWER OUTPUTS (**) Per device SWITCHING (V CC =13V) LOGIC INPUT Symbol Parameter Value Unit R thj-lead Thermal Resistance Junction-lead 15 °C/W R thj-amb Thermal Resistance Junction-ambient 75 (*) °C/W Symbol Parameter Test Conditions Min Typ Max Unit VCC () Operating Supply Voltage 5.5 13 36 V VUSD () Under Voltage Shut-down 3 4 5.5 V VOV () Overvoltage Shut-down 36 V R ON On State Resistance IOUT =1A; Tj=25°C IOUT =1A; VCC >8V 160 320 m Ω m Ω IS () Supply Current Off State; VCC =13V; VIN=V OUT =0V Off State; VCC =13V; VIN=V OUT =0V; Tj=25°C On State; VCC =13V; VIN=5V; IOUT =0A µA µA mA IL(off1) Off State Output Current VIN=V OUT =0V 0 50 µA IL(off2) Off State Output Current VIN=0V; VOUT =3.5V -75 0 µA IL(off3) Off State Output Current VIN=V OUT =0V; Vcc=13V; Tj =125°C 5 µA IL(off4) Off State Output Current VIN=V OUT =0V; Vcc=13V; Tj =25°C 3 µA Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time R L=13Ω from VIN rising edge to VOUT =1.3V 30 µs td(off) Turn-off Delay Time R L=13Ω from VIN falling edge to VOUT =11.7V 30 µs dVOUT /dt(on) Turn-on Voltage Slope R L=13Ω from VOUT =1.3V to VOUT =10.4V See relative diagram V/µs dVOUT /dt(off)Turn-off Voltage Slope R L=13Ω from VOUT =11.7V to VOUT =1.3V See relative diagram V/µs Symbol Parameter Test Conditions Min Typ Max Unit VIL Input Low Level 1.25 V IIL Low Level Input Current VIN = 1.25V 1 µA VIH Input High Level 3.25 V IIH High Level Input Current VIN = 3.25V 10 µA VI(hyst) Input Hysteresis Voltage 0.5 V VICL Input Clamp Voltage IIN = 1mA IIN = -1mA 66 . 8 -0.7 V

ELECTRICAL CHARACTERISTICS (continued) STATUS PIN PROTECTIONS OPENLOAD DETECTION Symbol Parameter Test Conditions Min Typ Max Unit VSTAT Status Low Output Voltage ISTAT = 1.6 mA 0.5 V ILSTAT Status Leakage Current Normal Operation; VSTAT = 5V 10 µA C STAT Status Pin Input Capacitance Normal Operation; VSTAT = 5V 100 pF VSCL Status Clamp Voltage ISTAT = 1mA ISTAT = - 1mA 66 . 8 -0.7 V Symbol Parameter Test Conditions Min Typ Max Unit TTSD Shut-down Temperature 150 175 200 °C TR Reset Temperature 135 °C Thyst Thermal Hysteresis 7 15 °C tSDL Status Delay in Overload Conditions Tj>TTSD 20 µs Ilim Current limitation 5.5V<VCC <36V 3.5 5 7.5 7.5 A A Vdemag Turn-off Output Clamp Voltage IOUT =1A; L=6mH V CC -41 VCC -48 VCC -55 V Symbol Parameter Test Conditions Min Typ Max Unit IOL Openload ON State Detection Threshold VIN=5V 20 40 80 mA tDOL(on) Openload ON State Detection Delay IOUT =0A 200 µs VOL Openload OFF State Voltage Detection Threshold V IN=0V 1.5 2.5 3.5 V tDOL(off) Openload Detection Delay at Turn Off 1000 µs VINn VSTAT n tDOL(off) OPEN LOAD STATUS TIMING (with external pull-up) VINn VSTAT n OVERTEMP STATUS TIMING tSDLtSDL IOUT < IOLVOUT > VOL tDOL(on) Tj > TTSD

t t VOUTn VINn 80% 10% dVOUT /dt(on) td(off) 90% dVOUT /dt(off) td(on) Switching time Waveforms TRUTH TABLE CONDITIONS INPUT OUTPUT STATUS Normal Operation L H L H H H Current Limitation L H H L X X H j < TTSD ) H (Tj > TTSD ) L Overtemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output Voltage > VOL L H H H L H Output Current < IOL L H L H H L

ELECTRICAL TRANSIENT REQUIREMENTS ON V CC PIN ISO T/R 7637/1 Test Pulse TEST LEVELS I II III IV Delays and Impedance 1 -25 V -50 V -75 V -100 V 2 ms 10 Ω 2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω 4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω 5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω ISO T/R 7637/1 Test Pulse TEST LEVELS RESULTS I II III IV

1 CCCC

2 CCCC

4 CCCC

5 CEEE

C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device.

OPEN LOAD without external pull-up STATUS n INPUT n NORMAL OPERATION UNDERVOLTAGE VCC VUSD VUSDhyst INPUT n OVERVOLTAGE VCC STATUS n INPUT n STATUS n STATUS n INPUT n STATUS n INPUT n OPEN LOAD with external pull-up undefined OVERTEMPERATURE INPUT n STATUS n TTSD TR Figure 1: Waveforms Tj OUTPUT VOLTAGE n VCC <V OV OUTPUT VOLTAGE n OUTPUT VOLTAGE n OUTPUT VOLTAGE n OUTPUT VOLTAGE n OUTPUT CURRENT n VOUT >V OL VOL VCC >V OV

GND PROTECTION NETWORK AGAINST REVERSE BATTERY Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the R GND resistor. 1) RGND ≤ 600mV / IS(on)max. 2) RGND ≥ (−VCC ) / (-IGND ) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device’s datasheet. Power Dissipation in R GND (when VCC <0: during reverse battery situations) is: PD = (-VCC )2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where I S(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the R GND will produce a shift (IS(on)max * RGND ) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND . If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND ) in the ground line. A resistor (RGND =1kΩ) should be inserted in parallel to D GND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift ( /c106 600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. LOAD DUMP PROTECTION D ld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the V CC line that are greater than the ones shown in the ISO T/R 7637/1 table. APPLICATION SCHEMATIC VCC OUTPUT2 Dld +5V Rprot OUTPUT1 STATUS1 INPUT1 +5V STATUS2 INPUT2 GND +5V µC Rprot Rprot Rprot DGND RGND VGND

µC I/Os PROTECTION: If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. CCpeak /Ilatchup ≤ Rprot ≤ (VOH µC -VIH-VGND ) / IIHmax Calculation example: For VCCpeak = - 100V and Ilatchup ≥ 20mA; VOH µC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ . Recommended R prot value is 10kΩ.

OPEN LOAD DETECTION IN OFF STATE Off state open load detection requires an external pull-up resistor (RPU ) connected between OUTPUT pin and a positive supply voltage (VPU ) like the +5V line used to supply the microprocessor. The external resistor has to be selected according to the following requirements: 1) no false open load indication when load is connected: in this case we have to avoid V OUT to be higher than VOlmin; this results in the following condition VOUT =(VPU /(RL+R PU ))RL<V Olmin. 2) no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax ; this results in the following condition RPU <(VPU– VOLmax )/ IL(off2). Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-up resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of V OLmin , VOLmax and IL(off2) are available in the Electrical Characteristics section. VOL V batt. V PU R PU R L R DRIVER LOGIC INPUT STATUS VCC OUT GROUND IL(off2) Open Load detection in off state

Input Clamp Voltage Status Leakage Current Off State Output Current Status Clamp VoltageStatus Low Output Voltage -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 Iih (uA) Vin=3.25V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 6.2 6.4 6.6 6.8 7.2 7.4 7.6 7.8 Vicl (V) Iin=1mA -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.01 0.02 0.03 0.04 0.05 Ilstat (uA) Vstat=5V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Vstat (V) Istat=1.6mA -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 6.2 6.4 6.6 6.8 7.2 7.4 7.6 7.8 Vscl (V) Istat=1mA -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 0.16 0.32 0.48 0.64 0.8 0.96 1.12 1.28 1.44 1.6 IL(off1) (uA) Off state Vcc=36V Vin=Vout=0V

Input Hysteresis VoltageInput Low Level On State Resistance Vs Tcase On State Resistance Vs VCC Input High LevelOpenload On State Detection Threshold -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 2.2 2.4 2.6 2.8 3.2 3.4 3.6 Vih (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 1.2 1.4 1.6 1.8 2.2 2.4 2.6 Vil (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 Vhyst (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Iol (mA) Vcc=13V Vin=5V -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 100 150 200 250 300 350 400 Ron (mOhm) Iout=0.5A Vcc=8V; 13V & 36V 5 1 01 52 02 53 03 54 0 Vcc (V) 100 125 150 175 200 225 250 275 300 Ron (mOhm) Iout=0.5A Tc= - 40°C Tc= 25°C Tc= 150°C

Turn-on Voltage Slope Turn-off Voltage Slope ILIM Vs Tcase Openload Off State Voltage Detection Threshold -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Vov (V) -50 -25 0 25 50 75 100 125 150 175 Tc (°C) 0.5 1.5 2.5 3.5 4.5 Vol (V) Vin=0V -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 200 300 400 500 600 700 800 900 1000 dVout/dt(on) (V/ms) Vcc=13V Rl=13Ohm -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 100 150 200 250 300 350 400 450 500 dVout/dt(off) (V/ms) Vcc=13V Rl=13Ohm -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Ilim (A) Vcc=13V

Maximum turn off current versus load inductance A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC =13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL t Demagnetization Demagnetization Demagnetization 0.1 1 10 100 L(mH) ILMAX (A) A B C

R thj-amb Vs PCB copper area in open box free air condition SO-16 THERMAL DATA Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=1.6mm, Cu thickness=35µm, Copper areas: 0.26cm2, 4cm2). 012345 PCB Cu heatsink area (cm^2) RTH j-am b (°C/W)

Thermal fitting model of a double channel HSD in SO-16 Pulse calculation formula Thermal Parameter Area/island (cm2)0 . 5 4 R1 (°C/W) 0.35 R2 (°C/W) 1.8 R3 ( °C/W) 4.5 R4 (°C/W) 10 R5 (°C/W) 16 R6 (°C/W) 48 25 C1 (W.s/°C) 0.0001 C2 (W.s/°C) 7.00E-04 C3 (W.s/°C) 6.00E-03 C4 (W.s/°C) 0.2 C5 (W.s/°C) 0.7 C6 (W.s/°C) 2 4 Z TH δ R TH δ Z THtp 1 δ–()+⋅= where δ tp T⁄= SO-16 Thermal Impedance Junction Ambient Single Pulse T_amb Pd1 C3 C4 R3R1 R6R5R2 C5 C6C2 Pd2 C1 C2 Tj_1 Tj_2 0.01 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) ZTH (°C/W) 0.26 cm2 4 cm2

DIM. mm. inch A 1.75 0.068 a1 0.1 0.2 0.004 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 9.8 10 0.385 0.393 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.149 1.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.62 0.024 S8 ° ( m a x . ) SO-16 MECHANICAL DATA

SO-16 TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 50 Bulk Q.ty 1000 Tube length (± 0.5) 532 A 3.2 B 6 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) All dimensions are in mm. Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed REEL DIMENSIONS C B A

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