VNN7NV04 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 37
Technical content
Datasheet sections
- 1 Block diagram and pin description
- 2 Electrical specifications
- 2.1 Absolute maximum ratings
- 2.2 Thermal data
- 2.3 Electrical characteristics
- 3 Protection features
- 3.1 Electrical characteristics curves
- 3.2 SO-8 maximum demagnetization energy
- 3.3 DPAK maximum demagnetization energy
- 3.4 SOT -223 maximum demagnetization energy
- 4 Package and PCB thermal data
- 4.1 SO-8 thermal data
- 4.2 SOT -223 thermal data
- 4.3 DPAK thermal data
- 5 Package and packing information
- 5.1 TO-251 (IPAK) mechanical data
- 5.2 TO-252 (DPAK) mechanical data
- 5.3 SOT -223 mechanical data
- 5.4 SO-8 mechanical data
- 5.5 SOT -223 packing information
- 5.6 SO-8 packing information
- 5.7 DPAK packing information
- 5.8 IPAK packing information
- 6 Revision history
Features
■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
Description
The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Type R DS(on) Ilim Vclamp VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 60 mΩ 6A 4 0V SOT-223 SO-8 TO251 (IPAK) 3 3 TO252 (DPAK) Table 1. Device summary
1 Block diagram and pin description
Figure 1. Block diagram Figure 2. Configurati on diagram (top view)
- For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.
2 Electrical specifications
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
Table 2. Absolute maximum ratings
2.2 Thermal data
2.3 Electrical characteristics
-40 °C < Tj < 150 °C, unless otherwise specified. Table 3. Thermal data
- When mounted on a standard single-sided FR4 board with 0.5 mm 2 of Cu (at least 35 µm thick) connected to all DRAIN
Table 4. Electrical characteristics
- Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 4. Electrical characteristics (continued)
Protection features VNN7NV04, VN S7NV04, VND7NV04, VND7NV04-1 10/37 Doc ID 7383 Rev 2
3 Protection features
During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path. The device then behaves like a standard Power MOSFET and can be used as a switch from DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current I ISS (typ. 100µA) flows into the input pin in order to supply the internal circuitry. The device integrates:
- Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold T jsh.
- Over temperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Over temperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15 °C below shutdown temperature.
- Status feedback: in the case of an over temperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the input pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the input pin driver is not able to supply the current I gf, the input pin will fall to 0 V. This will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL logic circuit.
3.1 Electrical char acteristics curves
Figure 9. Derating curve Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Static drain-source on resistance Figure 13. Source-drain diode forward Figure 14. Static drain source on resistance
3.2 SO-8 maximum de magnetization energy
Figure 30. SO-8 maximum turn-off current versus load inductance Figure 31. SO-8 demagnetization
3.3 DPAK maximum demagnetization energy
Figure 32. DPAK maximum turn-off current versus load inductance Figure 33. DPAK demagnetization
3.4 SOT-223 maximum de magnetization energy
Figure 34. SOT-223 maxi mum turn-off current versus load inductance Figure 35. SOT-223 demagnetization
4 Package and PCB thermal data
4.1 SO-8 thermal data
Figure 36. SO-8 PC board thickness=2 mm, Cu thickness=35 µm, Copper areas: 0.14 cm2, 0.8 cm2, 2 cm2). Figure 37. R thj-amb vs PCB copper area in open box free air condition
4.2 SOT-223 thermal data
Figure 40. SOT-223 PC board thickness=2 mm, Cu thickness=35 µm, Copper areas: 0.11 cm2, 1 cm2, 2 cm2). Figure 41. R thj-amb vs PCB copper area in open box free air condition Table 5. SO-8 thermal parameter (continued)
4.3 DPAK thermal data
Figure 44. DPAK PC board thickness=2 mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8 cm2). Figure 45. R thj-amb vs PCB copper area in open box free air condition Table 6. SOT-223 thermal parameter (continued)
Table 7. DPAK thermal parameter (continued)
5 Package and packing information
specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
5.1 TO-251 (IPAK) mechanical data
Table 8. TO-251 (IPAK) mechanical data
Figure 48. TO-251 (IPAK) package dimensions
5.2 TO-252 (DPAK) mechanical data
Table 9. TO-252 (DPAK) mechanical data
Figure 49. TO-252 (DPAK) package dimensions
5.3 SOT-223 mechanical data
Table 9. TO-252 (DPAK) mechanical data (continued) Table 10. SOT-223 mechanical data
Figure 50. SOT-223 package dimensions
5.4 SO-8 mechanical data
Table 10. SOT-223 mechanical data (continued) Table 11. SO-8 mechanical data
Figure 51. SO-8 package dimensions
- Dimension “D” does not include mold fl ash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
- Dimension “E1” does not include interlead flash or pr otrusions. Interlead flash or protrusions shall not
Table 11. SO-8 mechanical data (continued)
5.5 SOT-223 packing information
Figure 52. SOT-223 tape and reel shipment (suffix “TR”)
5.6 SO-8 packing information
Figure 53. SO-8 tube shipment (no suffix) Figure 54. SO-8 tape and reel shipment (suffix “TR”)
5.7 DPAK packing information
Figure 55. DPAK footprint and tube shipment (no suffix) Figure 56. DPAK tape and reel shipment (suffix “TR”)
5.8 IPAK packing information
Figure 57. IPAK tube shipment (no suffix)
6 Revision history
Table 12. Document revision history Package and PCB thermal data on page 20.