VND7040AJ

VND7040AJ_V01 STM | Alldatasheet

Document overview

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Technical content

Datasheet sections

• 1 Block diagram and pin description
• 2 Electrical specification
• 2.1 Absolute maximum ratings
• 2.2 Thermal data
• 2.3 Main electrical characteristics
• 2.4 Waveforms
• 2.5 Electrical characteristics curves
• 3 Protections
• 3.1 Power limitation
• 3.2 Thermal shutdown
• 3.3 Current limitation
• 3.4 Negative voltage clamp
• 4 Application information
• 4.1 GND protection network against reverse battery
• 4.1.1 Diode (DGND) in the ground line
• 4.2 Immunity against transient electrical disturbances
• 4.3 MCU I/Os protection
• 4.4 Multisense - analog current sense
• 4.4.1 Principle of Multisense signal generation
• 4.4.2 TCASE and VCC monitor
• 4.4.3 Short to VCC and OFF-state open-load detection
• 5 Maximum demagnetization energy (VCC = 16 V)
• 6 Package and PCB thermal data
• 6.1 PowerSSO-16 thermal data
• 7 Package information
• 7.1 PowerSSO-16 package information
• 7.2 PowerSSO-16 packing information
• 7.3 PowerSSO-16 marking information
• 8 Order codes
• 9 Revision history

Features

Max transient supply voltage VCC 40 V Operating voltage range VCC 4 to 28 V Typ. on-state resistance (per Ch) RON 40 mΩ Current limitation (typ) ILIMH 34 A Standby current (max) ISTBY 0.5 µA

• AEC-Q100 qualified
• General − Double channel smart high-side driver with MultiSense analog feedback − Very low standby current − Compatible with 3 V and 5 V CMOS outputs
• MultiSense diagnostic functions − Multiplexed analog feedback of: load current with high precision proportional current mirror, VCC supply voltage and TCHIP device temperature − Overload and short to ground (power limitation) indication − Thermal shutdown indication − OFF-state open-load detection − Output short to VCC detection − Sense enable/disable
• Protections − Undervoltage shutdown − Overvoltage clamp − Load current limitation − Self limiting of fast thermal transients − Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin − Loss of ground and loss of VCC − Reverse battery with external components − Electrostatic discharge protection

Applications

• All types of Automotive resistive, inductive and capacitive loads
• Specially intended for automotive signal lamps (up to P27W or SAE1156 and R5W paralleled or LED rear combinations)

Description

The device is a double channel high-side driver manufactured using ST proprietary VIPower® M0- 7 technology and housed in PowerSSO-16 package. The device is designed to drive 12 V automotive grounded loads through a 3 V and

5 V CMOS-compatible interface, providing

protection and diagnostics. The device integrates advanced protective functions such as load current limitation, overload active management by power limitation and overtemperature shutdown with configurable latch-off. A FaultRST pin unlatches the output in case of fault or disables the latch-off functionality. A dedicated multifunction multiplexed analog output pin delivers sophisticated diagnostic functions including high precision proportional load current sense, supply voltage feedback and chip temperature sense, in addition to the detection of overload and short circuit to ground, short to VCC and OFF-state open-load. A sense enable pin allows OFF-state diagnosis to be disabled during the module low-power mode as well as external sense resistor sharing among similar devices.

VND7040AJ Block diagram and pin description

1 Block diagram and pin description

Figure 1: Block diagram Table 1: Pin functions Name Function VCC Battery connection. OUTPUT0,1 Power output. GND Ground connection. Must be reverse battery protected by an external diode / resistor network. INPUT0,1 Voltage controlled input pin with hysteresis, compatible with 3 V and 5 V CMOS outputs. It controls output switch state. MultiSense Multiplexed analog sense output pin; it delivers a current proportional to the selected diagnostic: load current, supply voltage or chip temperature. SEn Active high compatible with 3 V and 5 V CMOS outputs pin; it enables the MultiSense diagnostic pin. SEL0,1 Active high compatible with 3 V and 5 V CMOS outputs pin; they address the MultiSense multiplexer. FaultRST Active low compatible with 3 V and 5 V CMOS outputs pin; it unlatches the output in case of fault; If kept low, sets the outputs in auto-restart. mode

Block diagram and pin description VND7040AJ Figure 2: Configuration diagram (top view) Table 2: Suggested connections for unused and not connected pins Connection / pin MultiSense N.C. Output Input SEn, SELx, FaultRST Floating Not allowed X (1) X X X To ground Through 1 kΩ resistor X Not allowed Through 15 kΩ resistor Through 15 kΩ resistor Notes: (1)X: do not care.

2 Electrical specification

Figure 3: Current and voltage conventions VFn = VOUTn - VCC during reverse battery condition.

2.1 Absolute maximum ratings

Stressing the device above the rating listed in Table 3: "Absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability. Table 3: Absolute maximum ratings Symbol Parameter Value Unit VCC DC supply voltage 38 V -VCC Reverse DC supply voltage 0.3 VCCPK Maximum transient supply voltage (ISO 16750-2:2010 Test B clamped to 40V; RL = 4 Ω) 40 V VCCJS Maximum jump start voltage for single pulse short circuit protection 28 V -IGND DC reverse ground pin current 200 mA IOUT OUTPUT0,1 DC output current Internally limited A -IOUT Reverse DC output current 11 IIN INPUT0,1 DC input current -1 to 10 mA ISEn SEn DC input current ISEL SEL0,1 DC input current IFR FaultRST DC input current VIN OUTPUT0,1 MultiSense FaultRST SEn SEL0,1 INPUT0,1 IIN ISEL ISEn IFR IGND VSENSE VOUT VCCVFn IS IOUT ISENSE VCC VSEL VSEn VFR GAPGCFT00315

Symbol Parameter Value Unit VFR FaultRST DC input voltage 7.5 V ISENSE MultiSense pin DC output current (VGND = VCC and VSENSE < 0 V) 10 mA MultiSense pin DC output current in reverse (VCC < 0 V) -20 EMAX Maximum switching energy (single pulse) (TDEMAG = 0.4 ms; Tjstart = 150 °C) 36 mJ VESD Electrostatic discharge (JEDEC 22A-114F)

• INPUT0,1
• MultiSense
• SEn, SEL0,1, FaultRST
• OUTPUT0,1
• VCC 4000 2000 4000 4000 4000 V V V V V VESD Charge device model (CDM-AEC-Q100-011) 750 V Tj Junction operating temperature -40 to 150 Tstg Storage temperature -55 to 150

2.2 Thermal data

Table 4: Thermal data Symbol Parameter Typ. value Unit Rthj-board Thermal resistance junction-board (JEDEC JESD 51-5 / 51-8) (1)(2) 5.7 °C/W Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-5)(1)(3) 57 Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-7)(1)(2) 23.5 Notes: (1)One channel ON. (2)Device mounted on four-layers 2s2p PCB (3)Device mounted on two-layers 2s0p PCB with 2 cm2 heatsink copper trace

2.3 Main electrical characteristics

7 V < VCC < 28 V; -40°C < Tj < 150°C, unless otherwise specified. All typical values refer to VCC = 13 V; Tj = 25°C, unless otherwise specified. Table 5: Power section Symbol Parameter Test conditions Min. Typ. Max. Unit VCC Operating supply voltage 4 13 28 V VUSD Undervoltage shutdown 4 V VUSDReset Undervoltage shutdown reset 5 V VUSDhyst Undervoltage shutdown hysteresis 0.3 V

Symbol Parameter Test conditions Min. Typ. Max. Unit RON On-state resistance (1) IOUT = 2.5 A; Tj = 25°C mΩ IOUT = 2.5 A; Tj = 150°C IOUT = 2.5 A; VCC = 4 V; Tj = 25°C Vclamp Clamp voltage IS = 20 mA; 25°C < Tj < 150°C 41 46 52 V IS = 20 mA; Tj = -40°C 38 V ISTBY Supply current in standby at VCC = 13 V (2) VCC = 13 V; VIN = VOUT = VFR = VSEn = 0 V; VSEL0,1 = 0 V; Tj = 25°C 0.5 µA VCC = 13 V; VIN = VOUT = VFR = VSEn = 0 V; VSEL0,1 = 0 V; Tj = 85°C (3) 0.5 VCC = 13 V; VIN = VOUT = VFR = VSEn = 0 V; VSEL0,1 = 0 V; Tj = 125°C tD_STBY Standby mode blanking time VCC = 13 V; VIN = VOUT = VFR = VSEL0,1 = 0 V; VSEn = 5 V to 0 V 60 300 550 µs IS(ON) Supply current VCC = 13 V; VSEn = VFR = VSEL0,1 = 0 V; VIN0 = 5 V; VIN1 = 5 V; IOUT0 = 0 A; IOUT1 = 0 A 5 8 mA IGND(ON) Control stage current consumption in ON state. All channels active. VCC = 13 V; VSEn = 5 V; VFR = VSEL0,1 = 0 V; VIN0 = 5 V; VIN1 = 5 V; IOUT0 = 2.5 A; IOUT1 = 2.5 A 12 mA IL(off) Off-state output current at VCC = 13 V (2) VIN = VOUT = 0 V; VCC = 13 V; Tj = 25°C 0 0.01 0.5 µA VIN = VOUT = 0 V; VCC = 13 V; Tj = 125°C 0 VF Output - VCC diode voltage (2) IOUT = -2.5 A; Tj = 150°C 0.7 V Notes: (1)For each channel (2)PowerMOS leakage included. (3)Parameter specified by design; not subject to production test. Table 6: Switching VCC = 13 V; -40°C < Tj < 150°C, unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit td(on)(1) Turn-on delay time at Tj = 25 °C RL = 5.2 Ω 10 25 120 µs td(off)(1) Turn-off delay time at Tj = 25 °C 10 40 100 (dVOUT/dt)on(1) Turn-on voltage slope at Tj = 25 °C RL = 5.2 Ω 0.1 0.33 0.7 V/µs (dVOUT/dt)off(1) Turn-off voltage slope at Tj = 25 °C 0.1 0.35 0.7

VCC = 13 V; -40°C < Tj < 150°C, unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit WON Switching energy losses at turn-on (twon) RL = 5.2 Ω — 0.28 0.36(2) mJ WOFF Switching energy losses at turn-off (twoff) RL = 5.2 Ω — 0.26 0.36(2) mJ tSKEW(1) Differential Pulse skew (tPHL - tPLH) RL = 5.2 Ω -40 10 60 µs Notes: (1)See Figure 6: "Switching time and Pulse skew". (2)Parameter guaranteed by design and characterization; not subject to production test. Table 7: Logic inputs

7 V < VCC < 28 V; -40°C < Tj < 150°C

Symbol Parameter Test conditions Min. Typ. Max. Unit INPUT0,1 characteristics VIL Input low level voltage 0.9 V IIL Low level input current VIN = 0.9 V 1 µA VIH Input high level voltage 2.1 V IIH High level input current VIN = 2.1 V 10 µA VI(hyst) Input hysteresis voltage 0.2 V VICL Input clamp voltage IIN = 1 mA 5.3 7.2 V IIN = -1 mA -0.7 FaultRST characteristics VFRL Input low level voltage 0.9 V IFRL Low level input current VIN = 0.9 V 1 µA VFRH Input high level voltage 2.1 V IFRH High level input current VIN = 2.1 V 10 µA VFR(hyst) Input hysteresis voltage 0.2 V VFRCL Input clamp voltage IIN = 1 mA 5.3 7.5 V IIN = -1 mA -0.7 SEL0,1 characteristics (7 V < VCC < 18 V) VSELL Input low level voltage 0.9 V ISELL Low level input current VIN = 0.9 V 1 µA VSELH Input high level voltage 2.1 V ISELH High level input current VIN = 2.1 V 10 µA VSEL(hyst) Input hysteresis voltage 0.2 V VSELCL Input clamp voltage IIN = 1 mA 5.3 7.2 V IIN = -1 mA -0.7

Symbol Parameter Test conditions Min. Typ. Max. Unit SEn characteristics (7 V < VCC < 18 V) VSEnL Input low level voltage 0.9 V ISEnL Low level input current VIN = 0.9 V 1 µA VSEnH Input high level voltage 2.1 V ISEnH High level input current VIN = 2.1 V 10 µA VSEn(hyst) Input hysteresis voltage 0.2 V VSEnCL Input clamp voltage IIN = 1 mA 5.3 7.2 V IIN = -1 mA -0.7 Table 8: Protections

7 V < VCC < 18 V; -40°C < Tj < 150°C

Symbol Parameter Test conditions Min. Typ. Max. Unit ILIMH DC short circuit current VCC = 13 V 24 34 A 4 V < VCC < 18 V (1) ILIML Short circuit current during thermal cycling VCC = 13 V; TR < Tj < TTSD TTSD Shutdown temperature 150 175 200 TR Reset temperature(1) TRS + 1 TRS + 7 TRS Thermal reset of fault diagnostic indication VFR = 0 V; VSEn = 5 V 135 THYST Thermal hysteresis (TTSD - TR)(1) ΔTJ_SD Dynamic temperature Tj = -40°C; VCC = 13 V K tLATCH_RST Fault reset time for output unlatch(1) VFR = 5 V to 0 V; VSEn = 5 V;

• E.g. Ch0: VIN0 = 5 V; VSEL0 = 0 V; VSEL1 = 0 V 3 10 20 µs VDEMAG Turn-off output voltage clamp IOUT = 2 A; L = 6 mH; Tj = -40°C VCC - V IOUT = 2 A; L = 6 mH; Tj = 25°C to 150°C VCC - VCC - VCC - 52 V VON Output voltage drop limitation IOUT = 0.25 A mV Notes: (1)Parameter guaranteed by design and characterization; not subject to production test.

Table 9: MultiSense Symbol Parameter Test conditions Min. Typ. Max. Unit VSENSE_CL MultiSense clamp voltage VSEn = 0 V; ISENSE = 1 mA -17 -12 V VSEn = 0 V; ISENSE = -1 mA Current sense characteristics KOL IOUT/ISENSE IOUT = 0.01 A; VSENSE = 0.5 V; VSEn = 5 V 530 dKcal/Kcal(1)(2) Current sense ratio drift at calibration point IOUT = 0.01 A to 0.05 A; Ical = 30 mA; VSENSE = 0.5 V; VSEn = 5 V -30 30 % KLED IOUT/ISENSE IOUT = 0.05 A; VSENSE = 0.5 V; VSEn = 5 V 900 1700 2650 dKLED/KLED(1)(2) Current sense ratio drift IOUT = 0.05 A; VSENSE = 0.5 V; VSEn = 5 V -25 25 % K0 IOUT/ISENSE IOUT = 0.25 A; VSENSE = 0.5 V; VSEn = 5 V 940 1600 2200 dK0/K0(1)(2) Current sense ratio drift IOUT = 0.25 A; VSENSE = 0.5 VSEn = 5 V -20 20 % K1 IOUT/ISENSE IOUT = 0.5 A; VSENSE = 4 V; VSEn = 5 V 1060 1500 1970 dK1/K1(1)(2) Current sense ratio drift IOUT = 0.5 A; VSENSE = 4 V; VSEn = 5 V -15 15 % K2 IOUT/ISENSE IOUT = 1.5 A; VSENSE = 4 V; VSEn = 5 V 1140 1410 1710 dK2/K2(1)(2) Current sense ratio drift I OUT = 1.5 A; VSENSE = 4 V; VSEn = 5 V -10 10 % K3 IOUT/ISENSE IOUT = 4.5 A; VSENSE = 4 V; VSEn = 5 V 1260 1400 1540 dK3/K3(1)(2) Current sense ratio drift I OUT = 4.5 A; VSENSE = 4 V; VSEn = 5 V -5 5 % ISENSE0 MultiSense leakage current MultiSense disabled: V SEn = 0 V 0 0.5 µA MultiSense disabled: -1 V < VSENSE < 5 V(1) -0.5 0.5 MultiSense enabled: V SEn = 5 V; All channels ON; IOUTX = 0 A; ChX diagnostic selected;

• E.g. Ch0: VIN0 = 5 V; VIN1 = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT0 = 0 A; IOUT1 = 2.5 A

Symbol Parameter Test conditions Min. Typ. Max. Unit MultiSense enabled: VSEn = 5 V; ChX OFF; ChX diagnostic selected:

• E.g. Ch0: VIN0 = 0 V; VIN1 = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT1 = 2.5 A VOUT_MSD(1) Output Voltage for MultiSense shutdown VSEn = 5 V; RSENSE = 2.7 kΩ;
• E.g. Ch0: VIN0 = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT0 = 2.5 A V VSENSE_SAT Multisense saturation voltage VCC = 7 V; RSENSE = 2.7 kΩ; VSEn = 5 V; VIN0 = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT0 = 4.5 A; Tj = 150°C V ISENSE_SAT(1) CS saturation current VCC = 7 V; VSENSE = 4 V; VIN0 = 5 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; Tj = 150°C mA IOUT_SAT(1) Output saturation current VCC = 7 V; VSENSE = 4 V; VIN0 = 5 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; Tj = 150°C A OFF-state diagnostic VOL OFF-state open- load voltage detection threshold VSEn = 5 V; ChX OFF; ChX diagnostic selected
• E.g: Ch0 VIN0 = 0 V; VSEL0 = 0 V; VSEL1 = 0 V 2 3 4 V IL(off2) OFF-state output sink current VIN = 0 V; VOUT = VOL; Tj = -40°C to 125°C -100 -15 µA tDSTKON OFF-state diagnostic delay time from falling edge of INPUT (see Figure 9: "TDSTKON") VSEn = 5 V; ChX ON to OFF transition; ChX diagnostic selected
• E.g: Ch0 VIN0 = 5 V to 0 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT0 = 0 A; VOUT = 4 V 100 350 700 µs tD_OL_V Settling time for valid OFF-state open load diagnostic indication from rising edge of SEn VIN0 = 0 V; VIN1 = 0 V; VFR = 0 V; VSEL0 = 0 V; VSEL1 = 0 V; VOUT0 = 4 V; VSEn = 0 V to 5 V 60 µs

Symbol Parameter Test conditions Min. Typ. Max. Unit tD_VOL OFF-state diagnostic delay time from rising edge of VOUT VSEn = 5 V; ChX OFF; ChX diagnostic selected

• E.g: Ch0 VIN0 = 0 V; VSEL0 = 0 V; VSEL1 = 0 V; VOUT = 0 V to 4 V 5 30 µs Chip temperature analog feedback VSENSE_TC MultiSense output voltage proportional to chip temperature VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 5 V; VIN0,1 = 0 V; RSENSE = 1 kΩ; Tj = -40°C 2.325 2.41 2.495 V VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 5 V; VIN0,1 = 0 V; RSENSE = 1 kΩ; Tj = 25°C 1.985 2.07 2.155 V VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 5 V; VIN0,1 = 0 V; RSENSE = 1 kΩ; Tj = 125°C 1.435 1.52 1.605 V dVSENSE_TC/dT Temperature coefficient Tj = -40°C to 150°C -5.5 mV/K Transfer function VSENSE_TC (T) = VSENSE_TC (T0) + dVSENSE_TC / dT * (T - T0) VCC supply voltage analog feedback VSENSE_VCC MultiSense output voltage proportional to VCC supply voltage VCC = 13 V; VSEn = 5 V; VSEL0 = 5 V; VSEL1 = 5 V; VIN0,1 = 0 V; RSENSE = 1 kΩ 3.16 3.23 3.3 V Transfer function (3) VSENSE_VCC = VCC / 4 Fault diagnostic feedback (see Table 10: "Truth table") VSENSEH MultiSense output voltage in fault condition VCC = 13 V; RSENSE = 1 kΩ;
• E.g: Ch0 in open load VIN0 = 0 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V; IOUT0 = 0 A; VOUT = 4 V 6.6 V ISENSEH MultiSense output current in fault condition VCC = 13 V; VSENSE = 5 V 7 20 30 mA MultiSense timings (current sense mode - see Figure 7: "MultiSense timings (current sense mode)")(4) tDSENSE1H Current sense settling time from rising edge of SEn VIN = 5 V; VSEn = 0 V to 5 V; RSENSE = 1 kΩ; RL = 5.2 Ω 60 µs tDSENSE1L Current sense disable delay time from falling edge of SEn VIN = 5 V; VSEn = 5 V to 0 V; RSENSE = 1 kΩ; RL = 5.2 Ω 5 20 µs

Symbol Parameter Test conditions Min. Typ. Max. Unit tDSENSE2H Current sense settling time from rising edge of INPUT V IN = 0 V to 5 V; VSEn = 5 V; RSENSE = 1 kΩ; RL = 5.2 Ω 100 250 µs ΔtDSENSE2H Current sense settling time from rising edge of I OUT (dynamic response to a step change of IOUT) VIN = 5 V; VSEn = 5 V; RSENSE = 1 kΩ; ISENSE = 90 % of ISENSEMAX; RL = 5.2 Ω 100 µs tDSENSE2L Current sense turn- off delay time from falling edge of INPUT V IN = 5 V to 0 V; VSEn = 5 V; RSENSE = 1 kΩ; RL = 5.2 Ω 50 250 µs MultiSense timings (chip temperature sense mode - see Figure 8: "Multisense timings (chip temperature and VCC sense mode)")(4) tDSENSE3H VSENSE_TC settling time from rising edge of SEn VSEn = 0 V to 5 V; VSEL0 = 0 V; VSEL1 = 5 V; RSENSE = 1 kΩ 60 µs tDSENSE3L VSENSE_TC disable delay time from falling edge of SEn VSEn = 5 V to 0 V; VSEL0 = 0 V; VSEL1 = 5 V; RSENSE = 1 kΩ 20 µs MultiSense timings (VCC voltage sense mode - see Figure 8: "Multisense timings (chip temperature and VCC sense mode)")(4) tDSENSE4H VSENSE_VCC settling time from rising edge of SEn V SEn = 0 V to 5 V; VSEL0 = 5 V; VSEL1 = 5 V; RSENSE = 1 kΩ 60 µs tDSENSE4L VSENSE_VCC disable delay time from falling edge of SEn VSEn = 5 V to 0 V; VSEL0 = 5 V; VSEL1 = 5 V; RSENSE = 1 kΩ 20 µs MultiSense timings (Multiplexer transition times)(4) tD_XtoY MultiSense transition delay from ChX to ChY VIN0 = 5 V; VIN1 = 5 V; VSEn = 5 V; VSEL1 = 0 V; VSEL0 = 0 V to 5 V; IOUT0 = 0 A; IOUT1 = 3 A; RSENSE = 1 kΩ 20 µs tD_CStoTC MultiSense transition delay from current sense to T C sense VIN0 = 5 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 0 V to 5 V; IOUT0 = 1.5 A; RSENSE = 1 kΩ 60 µs tD_TCtoCS MultiSense transition delay from TC sense to current sense VIN0 = 5 V; VSEn = 5 V; VSEL0 = 0 V; VSEL1 = 5 V to 0 V; IOUT0 = 1.5 A; RSENSE = 1 kΩ 20 µs tD_CStoVCC MultiSense transition delay from current sense to VCC sense VIN1 = 5 V; VSEn = 5 V; VSEL0 = 5 V; VSEL1 = 0 V to 5 V; IOUT1 = 1.5A; RSENSE = 1 kΩ 60 µs

Symbol Parameter Test conditions Min. Typ. Max. Unit tD_VCCtoCS MultiSense transition delay from VCC sense to current sense VIN1 = 5 V; VSEn = 5 V; VSEL0 = 5 V; VSEL1 = 5 V to 0 V; IOUT1 = 1.5 A; RSENSE = 1 kΩ 20 µs tD_TCtoVCC MultiSense transition delay from TC sense to VCC sense VCC = 13 V; Tj = 125°C; VSEn = 5 V; VSEL0 = 0 V to

5 V; VSEL1 = 5 V;

RSENSE = 1 kΩ 20 µs tD_VCCtoTC MultiSense transition delay from VCC sense to TC sense VCC = 13 V; Tj = 125°C; VSEn = 5 V; VSEL0 = 5 V to

0 V; VSEL1 = 5 V;

RSENSE = 1 kΩ 20 µs tD_CStoVSENSEH MultiSense transition delay from stable current sense on ChX to VSENSEH on ChY VIN0 = 5 V; VIN1 = 0 V; VSEn = 5 V; VSEL1 = 0 V; VSEL0 = 0 V to 5 V; IOUT0 = 3 A; VOUT1 = 4 V; RSENSE = 1 kΩ 20 µs Notes: (1)Parameter guaranteed by design and characterization; not subject to production test. (2)All values refer to VCC = 13 V; Tj = 25°C, unless otherwise specified. (3)VCC sensing and TC sensing are referred to GND potential. (4)Transition delay are measured up to +/- 10% of final conditions. Figure 4: IOUT/ISENSE versus IOUT GAPGCFT01328 500 1000 1500 2000 2500 3000 0 1 2 3 4 5 K-factor IOUT [A] Max Min Typ

Figure 9: TDSTKON Table 10: Truth table Mode Conditions INX FR SEn SELX OUTX MultiSense Comments Standby All logic inputs low L L L L L Hi-Z Low quiescent current consumption Normal Nominal load connected; Tj < 150 °C L X See (1) L See (1) H L H See (1) Outputs configured for auto-restart H H H See (1) Outputs configured for Latch-off Overload Overload or short to GND causing: T j > TTSD or ΔTj > ΔTj_SD L X See (1) L See (1) H L H See (1) Output cycles with temperature hysteresis H H L See (1) Output latches- off Undervoltage VCC < VUSD (falling) X X X X L L Hi-Z Hi-Z Re-start when VCC > VUSD + VUSDhyst (rising) OFF-state diagnostics Short to VCC L X See (1) H See (1) Open-load L X H See (1) External pull-up Negative output voltage Inductive loads turn-off L X See (1) < 0 V See (1) Notes: (1)Refer to Table 11: "MultiSense multiplexer addressing" TDSTKON VINPU T VOUT MultiSense VOUT > VOL GAPG2609141140CFT

Table 11: MultiSense multiplexer addressing SEn SEL1 SEL0 MUX channel MultiSense output Normal mode Overload OFF-state diag. (1) Negative output L X X Hi-Z H L L Channel 0 diagnostic ISENSE = 1/K * IOUT0 VSENSE = VSENSEH VSENSE = VSENSEH Hi-Z H L H Channel 1 diagnostic I SENSE = 1/K * IOUT1 VSENSE = VSENSEH VSENSE = VSENSEH Hi-Z H H L TCHIP Sense VSENSE = VSENSE_TC H H H VCC Sense VSENSE = VSENSE_VCC Notes: (1)In case the output channel corresponding to the selected MUX channel is latched off while the relevant input is low, Multisense pin delivers feedback according to OFF-State diagnostic. Example 1: FR = 1; IN0 = 0; OUT0 = L (latched); MUX channel = channel 0 diagnostic; Mutisense = 0. Example 2: FR = 1; IN0 = 0; OUT0 = latched, VOUT0 > VOL; MUX channel = channel 0 diagnostic; Mutisense = VSENSEH

2.4 Waveforms

Figure 10: Latch functionality - behavior in hard short circuit condition (TAMB << TTSD)

2.5 Electrical characteristics curves

Figure 15: OFF-state output current Figure 16: Standby current Figure 17: IGND(ON) vs. Iout Figure 18: Logic Input high level voltage Figure 19: Logic Input low level voltage Figure 20: High level logic input current 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175 T [°C] Iloff [nA] Off State Vcc = 13V Vin = Vout = 0 GAPGCFT01308 GAPGCFT01309 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 125 150 175 T [°C] ISTBY [µA] Vcc = 13V GAPGCFT01310 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -50 -25 0 25 50 75 100 125 150 175 T [°C] IGND(ON) [mA] Vcc = 13V Iout0 = Iout1 = 2.5A GAPGCFT01311 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 T [°C] ViH, VFRH, VSELH, VSEnH [V] GAPGCFT01312 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 T [°C] VilL VFRL, VSELL, VSEnL [V] GAPGCFT01313 0.5 1.5 2.5 3.5 -50 -25 0 25 50 75 100 125 150 175 T [°C] IiH, IFRH, ISELH, ISEnH [µA]

3 Protections

3.1 Power limitation

The basic working principle of this protection consists of an indirect measurement of the junction temperature swing ΔTj through the direct measurement of the spatial temperature gradient on the device surface in order to automatically shut off the output MOSFET as soon as ΔT j exceeds the safety level of ΔTj_SD. According to the voltage level on the FaultRST pin, the output MOSFET switches on and cycles with a thermal hysteresis according to the maximum instantaneous power which can be handled (FaultRST = Low) or remains off (FaultRST = High). The protection prevents fast thermal transient effects and, consequently, reduces thermo-mechanical fatigue.

3.2 Thermal shutdown

In case the junction temperature of the device exceeds the maximum allowed threshold (typically 175°C), it automatically switches off and the diagnostic indication is triggered. According to the voltage level on the FaultRST pin, the device switches on again as soon as its junction temperature drops to T R (FaultRST = Low) or remains off (FaultRST = High).

3.3 Current limitation

The device is equipped with an output current limiter in order to protect the silicon as well as the other components of the system (e.g. bonding wires, wiring harness, connectors, loads, etc.) from excessive current flow. Consequently, in case of short circuit, overload or during load power-up, the output current is clamped to a safety level, I LIMH, by operating the output power MOSFET in the active region.

3.4 Negative voltage clamp

In case the device drives inductive load, the output voltage reaches a negative value during turn off. A negative voltage clamp structure limits the maximum negative voltage to a certain value, VDEMAG, allowing the inductor energy to be dissipated without damaging the device.

4 Application information

Figure 35: Application diagram

4.1 GND protection network against reverse battery

Figure 36: Simplified internal structure

4.1.1 Diode (DGND) in the ground line

A resistor (typ. RGND = 4.7 kΩ) should be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (≈600 mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network.

4.2 Immunity against transient electrical disturbances

The immunity of the device against transient electrical emissions, conducted along the supply lines and injected into the V CC pin, is tested in accordance with ISO7637-2:2011 (E) and ISO 16750-2:2010. The related function performance status classification is shown in Table 12: "ISO 7637- 2 - electrical transient conduction along supply line". Test pulses are applied directly to DUT (Device Under Test) both in ON and OFF-state and in accordance to ISO 7637-2:2011(E), chapter 4. The DUT is intended as the present device only, without components and accessed through VCC and GND terminals. Status II is defined in ISO 7637-1 Function Performance Status Classification (FPSC) as follows: “The function does not perform as designed during the test but returns automatically to normal operation after the test”. Table 12: ISO 7637-2 - electrical transient conduction along supply line Test Pulse 2011(E) Test pulse severity level with Status II functional performance status Minimum number of pulses or test time Burst cycle / pulse repetition time Pulse duration and pulse generator internal impedance Level US(1) min max 1 III -112 V 500 pulses 0.5 s 2 ms, 10 Ω 2a III +55 V 500 pulses 0.2 s 5 s 50 µs, 2 Ω 3a IV -220 V 1h 90 ms 100 ms 0.1 µs, 50 Ω 3b IV +150 V 1h 90 ms 100 ms 0.1 µs, 50 Ω 4 (2) IV -7 V 1 pulse 100 ms, 0.01 Ω Load dump according to ISO 16750-2:2010 Test B (3)

40 V 5 pulse 1 min

400 ms, 2 Ω Notes: (1)US is the peak amplitude as defined for each test pulse in ISO 7637-2:2011(E), chapter 5.6. (2)Test pulse from ISO 7637-2:2004(E). (3)With 40 V external suppressor referred to ground (-40°C < Tj < 150 °C).

4.3 MCU I/Os protection

If a ground protection network is used and negative transients are present on the V CC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line both to prevent the microcontroller I/O pins from latching-up and to protect the HSD inputs. The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os. Equation VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC - VIH - VGND) / IIHmax Calculation example: For VCCpeak = -150 V; Ilatchup ≥ 20 mA; VOHµC ≥ 4.5 V 7.5 kΩ ≤ Rprot ≤ 140 kΩ. Recommended values: Rprot = 15 kΩ

4.4 Multisense - analog current sense

Diagnostic information on device and load status are provided by an analog output pin (MultiSense) delivering the following signals:

• Current monitor: current mirror of channel output current
• VCC monitor: voltage propotional to VCC
• TCASE: voltage propotional to chip temperature Those signals are routed through an analog multiplexer which is configured and controlled by means of SELx and SEn pins, according to the address map in MultiSense multiplexer addressing Table.

Figure 37: MultiSense and diagnostic – block diagram

4.4.1 Principle of Multisense signal generation

Figure 38: MultiSense block diagram Current monitor When current mode is selected in the MultiSense, this output is capable to provide:

• Current mirror proportional to the load current in normal operation, delivering current proportional to the load according to known ratio named K
• Diagnostics flag in fault conditions delivering fixed voltage VSENSEH The current delivered by the current sense circuit, ISENSE, can be easily converted to a voltage VSENSE by using an external sense resistor, RSENSE, allowing continuous load monitoring and abnormal condition detection. Normal operation (channel ON, no fault, SEn active) While device is operating in normal conditions (no fault intervention), VSENSE calculation can be done using simple equations Current provided by MultiSense output: ISENSE = IOUT/K Voltage on RSENSE: VSENSE = RSENSE · ISENSE = RSENSE · IOUT/K Where:
• VSENSE is voltage measurable on RSENSE resistor
• ISENSE is current provided from MultiSense pin in current output mode

• IOUT is current flowing through output
• K factor represents the ratio between PowerMOS cells and SenseMOS cells; its spread includes geometric factor spread, current sense amplifier offset and process parameters spread of overall circuitry specifying ratio between IOUT and ISENSE. Failure flag indication In case of power limitation/overtemperature, the fault is indicated by the MultiSense pin which is switched to a “current limited” voltage source, VSENSEH. In any case, the current sourced by the MultiSense in this condition is limited to ISENSEH. The typical behavior in case of overload or hard short circuit is shown in Waveforms section. Figure 39: Analogue HSD – open-load detection in off-state

Figure 40: Open-load / short to VCC condition Table 13: MultiSense pin levels in off-state Condition Output MultiSense SEn Open-load VOUT > VOL Hi-Z L VSENSEH H VOUT < VOL Hi-Z L 0 H Short to VCC VOUT > VOL Hi-Z L VSENSEH H Nominal VOUT < VOL Hi-Z L 0 H

4.4.2 TCASE and VCC monitor

In this case, MultiSense output operates in voltage mode and output level is referred to device GND. Care must be taken in case a GND network protection is used, because a voltage shift is generated between the device GND and the microcontroller input GND reference. Figure 41: "GND voltage shift" shows the link between VMEASURED and the real VSENSE signal.

Figure 41: GND voltage shift VCC monitor Battery monitoring channel provides VSENSE = VCC / 8. Case temperature monitor Case temperature monitor is capable of providing information about the actual device temperature. Since a diode is used for temperature sensing, the following equation describes the link between temperature and output VSENSE level: VSENSE_TC (T) = VSENSE_TC (T0) + dVSENSE_TC / dT * (T - T0) where dVSENSE_TC / dT ~ typically -5.5 mV/K (for temperature range (-40 °C to 150 °C)).

4.4.3 Short to VCC and OFF-state open-load detection

A short circuit between VCC and output is indicated by the relevant current sense pin set to VSENSEH during the device off-state. Small or no current is delivered by the current sense during the on-state depending on the nature of the short circuit. OFF-state open-load with external circuitry Detection of an open-load in off mode requires an external pull-up resistor RPU connecting the output to a positive supply voltage VPU. It is preferable that VPU is switched off during the module standby mode in order to avoid the overall standby current consumption to increase in normal conditions, i.e. when load is connected. RPU must be selected in order to ensure VOUT > VOLmax in accordance with the following equation: Equation RPU < VPU - 4 IL(off2)min @ 4V

Maximum demagnetization energy (VCC = 16 V) VND7040AJ

5 Maximum demagnetization energy (VCC = 16 V)

Figure 42: Maximum turn off current versus inductance Values are generated with RL = 0 Ω. In case of repetitive pulses, Tjstart (at the beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B. GAPGCFT01182 0.1 100 0.1 1 10 100 1000 I (A) L (mH) VND7040AJ- Maximum turn off Current versus inductance VND7040AJ - Single Pulse Repetitive pulse Tjstart=100°C Repetitive pulse Tjstart=125°C

6 Package and PCB thermal data

6.1 PowerSSO-16 thermal data

Figure 43: PowerSSO-16 on two-layers PCB (2s0p to JEDEC JESD 51-5) Figure 44: PowerSSO-16 on four-layers PCB (2s2p to JEDEC JESD 51-7) Table 14: PCB properties Dimension Value Board finish thickness 1.6 mm +/- 10% Board dimension 77 mm x 86 mm Board Material FR4 Copper thickness (top and bottom layers) 0.070 mm Copper thickness (inner layers) 0.035 mm Thermal vias separation 1.2 mm Thermal via diameter 0.3 mm +/- 0.08 mm Copper thickness on vias 0.025 mm Footprint dimension (top layer) 2.2 mm x 3.9 mm Heatsink copper area dimension (bottom layer) Footprint, 2 cm2 or 8 cm2

Figure 45: Rthj-amb vs PCB copper area in open box free air condition (one channel on) Figure 46: PowerSSO-16 thermal impedance junction ambient single pulse (one channel on) Equation: pulse calculation formula ZTHδ = RTH · δ + ZTHtp (1 - δ) where δ = tP/T 0 2 4 6 8 10 RTHjamb RTHjamb GAPGCFT01183 0.1 100 0.0001 0.001 0.01 0.1 1 10 100 1000 ZTH (°C/W) Time (s) Cu=8 cm2 Cu=2 cm2 Cu=foot print

4 Layer

Figure 47: Thermal fitting model of a double-channel HSD in PowerSSO-16 The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered. Table 15: Thermal parameters Area/island (cm2) Footprint 2 8 4L R1 = R7 (°C/W) 2.3 R2 = R8 (°C/W) 1.8 R3 (°C/W) 7 7 7 5 R4 (°C/W) 16 6 6 4 R5 (°C/W) 30 20 10 3 R6 (°C/W) 26 20 18 7 C3 (W.s/°C) 0.1 C6 (W.s/°C) 3 5 7 18

7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

7.1 PowerSSO-16 package information

Figure 48: PowerSSO-16 package outline Table 16: PowerSSO-16 mechanical data Ref. Dimensions Millimeters Min. Typ. Max. Θ 0° Θ1 0° Θ2 5° 15° Θ3 5° 15° A 1.70

Ref. Dimensions Millimeters Min. Typ. Max. A1 0.00 0.10 A2 1.10 1.60 b 0.20 0.30 b1 0.20 0.25 0.28 c 0.19 0.25 c1 0.19 0.20 0.23 D 4.9 BSC D1 2.90 3.50 e 0.50 BSC E 6.00 BSC E1 3.90 BSC E2 2.20 2.80 h 0.25 0.50 L 0.40 0.60 0.85 L1 1.00 REF N 16 R 0.07 R1 0.07 S 0.20 Tolerance of form and position aaa 0.10 bbb 0.10 ccc 0.08 ddd 0.08 eee 0.10 fff 0.10 ggg 0.15

7.2 PowerSSO-16 packing information

Figure 49: PowerSSO-16 reel 13" Table 17: Reel dimensions Description Value(1) Base quantity 2500 Bulk quantity 2500 A (max) 330 B (min) 1.5 C (+0.5, -0.2) 13 D (min) 20.2 N 100 W1 (+2 /-0) 12.4 W2 (max) 18.4 Notes: (1)All dimensions are in mm.

7.3 PowerSSO-16 marking information

Figure 52: PowerSSO-16 marking information Engineering Samples: these samples can be clearly identified by a dedicated special symbol in the marking of each unit. These samples are intended to be used for electrical compatibility evaluation only; usage for any other purpose may be agreed only upon written authorization by ST. ST is not liable for any customer usage in production and/or in reliability qualification trials. Commercial Samples: fully qualified parts from ST standard production with no usage restrictions.

8 Order codes

Table 19: Device summary Package Order codes Tape and reel PowerSSO-16 VND7040AJTR

9 Revision history

Table 20: Document revision history Date Revision Changes 19-May-2015 1 Initial release. 02-Oct-2016 2 Updated the following:

• Features list on the cover page
• Figure 52: "PowerSSO-16 marking information"